ASDM40P90AQ-R

ASDM40P90AQ 40V P-Channel MOSFET Features • Super Low Gate Charge • 100% EAS Guaranteed • Green Device Available V DS • • Excellent CdV/dt effect decline Advanced high cell density Trench technology R Product Summary I DS(on),Typ @ VGS=-10 V D -40 V 4.4 mΩ -90 A Application • Provides excellent RDSON for most synchronizations • Application of gate charge Buck converter D G S PDFN5×6-8 Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit VDS Drain-Source Voltage (VGS=0V） -40 V VGS Gate-Source Voltage (VDS=0V) ±20 V ID (DC) Drain Current-Continuous -90 A Drain Current-Continuous@ Current-Pulsed -339 A 58 W -55 To 175 ℃ IDM (pluse) PD Maximum Power Dissipation TJ,TSTG Table 2. Operating Junction and Storage Temperature Range Thermal Characteristic Symbol Parameter Max Unit R JC Thermal Resistance,Junction-to-Case 2.4 ℃ /W R JA Thermal Resistance,Junction-ambient 62 ℃ /W NOV 2021 Version1.0 1/7 www.ascendsemi.com 0755-86970486 ASDM40P90AQ 40V P-Channel MOSFET Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA -40 IDSS Zero Gate Voltage Drain Current(Tc=25℃) VDS=-40V,VGS=0V -1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA -1.5 -2.5 V VGS=-4.5V, ID=-15A 5.8 7 RDS(ON) Drain-Source On-State Resistance VGS=-10V, ID=-20A 4.4 5.3 On/Off States -1.0 V mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance 5508 PF 452 PF 286 PF 16 nS ID=-1A 17 nS VGS =-10V 68 nS 31 nS VDS=-20V,VGS=0V f=1.0MHz Crss Reverse Transfer Capacitance Switching Times td(on) Turn-on Delay Time VDS=-20V tr Turn-on Rise Time td(off) Turn-Off Delay Time RL =1.6Ω tf Turn-Off Fall Time Qg Total Gate Charge VDS=-20V 118 nC Qgs Gate-Source Charge VGS=-10V 13 nC Qgd Gate-Drain Charge 22 nC -90 A -1.2 V ID=-8.0A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward On Voltage ton Forward Turn-on Time ISD=-8A,VGS=0V, Intrinsic turn-on time is negligible(turn-on is dominated Notes: 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width≦300us , duty cycle≦2% 3.The power dissipation is limited by 175℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. NOV 2021 Version1.0 2/7 www.ascendsemi.com 0755-86970486 ASDM40P90AQ 40V P-Channel MOSFET Typical Characteristics NOV 2021 Version1.0 3/7 www.ascendsemi.com 0755-86970486 ASDM40P90AQ 40V P-Channel MOSFET NOV 2021 Version1.0 4/7 www.ascendsemi.com 0755-86970486 ASDM40P90AQ 40V P-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM40P90AQ-R 40P90A PDFN5*6-8 Tape&Reel 4000/Reel PACKAGE MARKING 40P90A PDFN5*6-8 NOV 2021 Version1.0 5/7 www.ascendsemi.com 0755-86970486 ASDM40P90AQ H D2 D L1 40V P-Channel MOSFET k L E2 E E1 L2 D1 e b SYMBOL A MILLIMETER MIN 0.900 A1 d A A1 MAX 1.000 1.100 0.254 REF. A2 A2 Typ. 0~0.05 D 4.824 4.900 4.976 D1 3.910 4.010 4.110 D2 4.924 5.000 5.076 E 5.924 6.000 6.076 E1 3.375 3.475 3.575 E2 5.674 5.750 5.826 b 0.350 0.400 0.450 e 1.270 TYP. L 0.534 0.610 0.686 L1 0.424 0.500 0.576 L2 1.800 REF. k 1.190 1.290 1.390 H 0.549 0.625 0.701 1.100 1.200 d NOV 2021 Version1.0 6/7 1.300 0.100 www.ascendsemi.com 0755-86970486 ASDM40P90AQ 40V P-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). ShenZhen Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. ShenZhen Ascend Semiconductor Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does ShenZhen Ascend Semiconductor Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume . all risks of such use and will agree to hold Ascendsemi Incorporated and all the companies whose products are represented on ShenZhen Ascend Semiconductor Incorporated website, harmless against all damages. ShenZhen Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use ShenZhen Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold ShenZhen Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com NOV 2021 Version1.0 7/7 www.ascendsemi.com 0755-86970486