ASDM40N60KQ-R

ASDM40N60KQ 40V N-Channel MOSFET Product Summary General Features ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability V DS 40 V R DS(on),Typ@ VGS =10 V 7.0 mΩ ID 60 A Application ● Load switching ● Hard switched and high frequency circuits ● Uninterruptible power supply TO-252-2L top view Schematic diagram Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Limit Unit Drain-Source Voltage Parameter VDS 40 V Gate-Source Voltage VGS ±20 V ID 60 A ID (100℃) 42 A Pulsed Drain Current IDM 240 A Maximum Power Dissipation PD 65 W 0.43 W/℃ EAS 400 mJ TJ,TSTG -55 To 175 ℃ Drain Current-Continuous Drain Current-Continuous(TC=100℃) Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) Thermal Resistance,Junction-to-Case NOV 2018 Version2.0 1/8 RθJA 62 ℃/W RθJC 2.8 ℃/W www.ascendsemi.com 0755-86970486 ASDM40N60KQ 40V N-Channel MOSFET Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 40 - - V Zero Gate Voltage Drain Current IDSS VDS=40V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.2 1.6 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A - 7.0 7.5 mΩ Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=20A - 10.5 12 mΩ gFS VDS=10V,ID=20A 15 - - S - 1520 - PF - 236 - PF - 160 - PF - 6.4 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics Crss VDS=20V,VGS=0V, F=1.0MHz (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=20V,ID=2A,RL=1Ω - 17.2 - nS td(off) VGS=10V,RG=3Ω - 29.6 - nS - 16.8 - nS - 29 nC - 4.5 nC - 6.4 nC Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=20V,ID=20A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS trr Reverse Recovery Time Reverse Recovery Charge Qrr Forward Turn-On Time ton VGS=0V,IS=10A - 1.2 V - - 60 A TJ = 25°C, IF = 20A - 29 - nS (Note3) - 26 - nC di/dt = 100A/μs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition : Tj=25℃,VDD=20V,VG=10V,L=1mH,Rg=25Ω， NOV 2018 Version2.0 2/8 www.ascendsemi.com 0755-86970486 ASDM40N60KQ 40V N-Channel MOSFET ID- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics (Curves) TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) ID- Drain Current (A) Figure 3 Rdson- Drain Current NOV 2018 Version2.0 3/8 Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward www.ascendsemi.com 0755-86970486 ASDM40N60KQ C Capacitance (pF) Power Dissipation (W) 40V N-Channel MOSFET TJ-Junction Temperature (℃) Figure 7 Capacitance vs Vds Figure 9 Power De-rating ID- Drain Current (A) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 VGS(th) vs Junction Temperature r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance NOV 2018 Version2.0 4/8 www.ascendsemi.com 0755-86970486 ASDM40N60KQ 40V N-Channel MOSFET Test circuit 1) EAS Test Circuit 2) Gate Charge Test Circuit 3) Switch Time Test Circuit NOV 2018 Version2.0 5/8 www.ascendsemi.com 0755-86970486 ASDM40N60KQ 40V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM40N60KQ-R 40N60 TO-252 Tape&Reel 2500/Reel MARKING PACKAGE 40N60 TO-252 NOV 2018 Version2.0 6/8 www.ascendsemi.com 0755-86970486 ASDM40N60KQ 40V N-Channel MOSFET TO-252 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 4.830 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 L1 L2 2.900 TYP. 1.400 L3 0.114 TYP. 1.700 0.055 1.600 TYP. 0.067 0.063 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V NOV 2018 Version2.0 5.350 TYP. 7/8 0.211 TYP. www.ascendsemi.com 0755-86970486 ASDM40N60KQ 40V N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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