ASDM3020S-R

ASDM3020S 30V Dual N-Channel MOSFET Features ● Dual N-Channel ● Enhancement mode ● Fast Switching ● High Effective Product Summary VDS RDS(on),max.@VGS=10V $SSOLFDWLRQV ● ● ID Power Management in Inverter System Synchronous Rectification 30 V 12.5 mΩ 12 A top view ASCEND SOP-8 Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① EAS Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage Unit 30 V TA =25°C 12 A TA =25°C 12 A TA =100°C 7.3 A TA =25°C 48 A 26 mJ 2 W ±20 V TA =25°C MSL TSTG , TJ Rating Level 3 Storage and junction temperature range -55 to 150 °C Typical Unit 40 °C/W 62.5 °C/W Thermal Characteristics Symbol Parameter RθJL Thermal Resistance, Junction-to-Lead R JA Thermal Resistance, Junction-to-Ambient NOV 2021 Version1.0 1/7 www.ascendsemi.com 0755-86970486 ASDM3020S 30V Dual N-Channel MOSFET Typical Electrical Characteristics Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 -- -- V Zero Gate Voltage Drain Current(Tj=25℃) VDS=30V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(Tj=125℃) VDS=30V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250μA 1.0 1.3 2.0 V RDS(ON) Drain-Source On-State Resistance ③ VGS=10V, ID=10A -- 10.5 12.5 mΩ RDS(ON) Drain-Source On-State Resistance ③ VGS=4.5V, ID=6A -- 13.5 16 mΩ 780 1250 1500 pF 100 210 250 pF 70 150 200 pF -- 3.5 -- Ω -- 17 -- nC -- 3.8 -- nC -- 4.8 -- nC -- 6.5 -- nS V(BR)DSS IDSS Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=15V,VGS=0V, f=1MHz f=1MHz VDS=15V,ID=10A, VGS=10V Switching Characteristics t d(on) Turn-on Delay Time tr Turn-on Rise Time ID=10A, -- 11.2 -- nS t d(off) Turn-Off Delay Time RG=3Ω, -- 20.7 -- nS tf Turn-Off Fall Time -- 5.3 -- nS VDD=15V, VGS=10V Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated) VSD Forward on voltage ISD=2A,VGS=0V -- 0.8 1.2 V t rr Reverse Recovery Time Tj=25℃,Isd=10A, -- 20 -- nS Qrr Reverse Recovery Charge VGS=0V di/dt=500A/μs 11.5 nC NOTE: ① Repetitive rating; pulse width limited by max. junction temperature. ② Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS = 8A, VGS =10V. Part not recommended for use above this value ③ Pulse width ≤ 300μs; duty cycle≤ 2%. NOV 2021 Version1.0 2/7 www.ascendsemi.com 0755-86970486 ASDM3020S 30V Dual N-Channel MOSFET ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) Typical Performance Characteristics Tj - Junction Temperature (°C) Fig2. Threshold Voltage Vs. Temperature Normalized On Resistance ID, Drain-Source Current (A) VDS, Drain -Source Voltage (V) Fig1. Typical Output Characteristics Tj - Junction Temperature (°C) Fig4. Normalized On-Resistance Vs. Temperature I SD, ID - Drain Current (A) Reverse Drain Current (A) VGS, Gate -Source Voltage (V) Fig3. Typical Transfer Characteristics VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage NOV 2021 Version1.0 3/7 VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area www.ascendsemi.com 0755-86970486 ASDM3020S 30V Dual N-Channel MOSFET C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Performance Characteristics VDS , Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs.Gate-Source Voltage Transient Thermal Resistance r(t) , Normalized Effective Fig7. Typical Capacitance Vs.Drain-Source Voltage Qg -Total Gate Charge (nC) T1, Square Wave Pulse Duration(sec) Fig9. T1 ,Transient Thermal Response Curve Fig10. Unclamped Inductive Test Circuit and Fig11. Switching Time Test Circuit and waveforms waveforms NOV 2021 Version1.0 4/7 www.ascendsemi.com 0755-86970486 ASDM3020S 30V Dual N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM3020S-R 3020 SOP8 Tape&Reel 4000/Reel PACKAGE MARKING 3020 SOP8 NOV 2021 Version1.0 5/7 www.ascendsemi.com 0755-86970486 ASDM3020S 30V Dual N-Channel MOSFET SOP-8 PACKAGE IN FORMATION Symbol Dimensions in Millimeters Min Dimensions in Inches Min Max A --- 1.75 --- 0.069 A1 0.00 0.26 0.000 0.010 A2 1.30 1.70 0.051 0.067 b 0.30 0.55 0.012 0.022 C 0.15 0.35 0.006 0.014 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 1.27 TYP e NOV 2021 Version1.0 Max 0.050 TYP H 5.70 6.30 0.224 0.248 L 0.45 0.85 0.018 0.033 θ 0∘ 8∘ 0∘ 8∘ 6/7 www.ascendsemi.com 0755-86970486 ASDM3020S 30V Dual N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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