ASDM20N20KQ-R

ASDM20N20KQ 20V N-Channel MOSFET Features • • • • Very Low On-resistance RDS(ON) Low Crss Fast switching Improved dv/dt capability Product Summary V DS R @ VGS=4.5 V DS(on),Typ ID $SSOLFDWLRQV 20 V 20 mΩ 24 A • PWM Application • Load Switch • Power Management D G S Schematic diagram TO-252 top view Absolute Maximum Ratings Value Units 20 V - Continuous (TC = 25℃) 20 A - Continuous (TC = 70℃) 16 A Symbol VDSS ID IDM VGSS PD R θJC TJ, TSTG TC = 25°C unless otherwise noted Parameter Drain-Source Voltage Drain Current Drain Current - Pulsed Gate-Source Voltage Power Dissipation (TC = 25℃) Thermal Resistance, Junction-to-Case Operating and Storage Temperature Range NOV 2022 Version1.0 1/9 (Note 1) 60 A ±10 27 4.6 V ℃/W -55 to +150 ℃ www.ascendsemi.com W 0755-86970486 ASDM20N20KQ 20V N-Channel MOSFET Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units VGS = 0 V, ID = 250 uA 20 -- -- V VDS =20 V, VGS = 0 V -- -- 1 uA VDS = 1V, TC = 125℃ -- -- 10 uA Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 10V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -10 V, VDS = 0 V -- -- -100 nA VDS = VGS, ID = 250 uA 0.4 - 1.0 V VGS = 4.5 V, ID =8A -- 20 28 VGS = 2.5 V, ID =6.6A - 29 35 -- 259 - pF -- 51 - pF -- 47 - pF -------- 5.0 36 15 5.4 4.2 0.62 1.9 -------- ns ns ns ns nC nC nC On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 10V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VGS=5 V, VDS=10V, ID =20A, RG = 6 Ω ,RL = 2.7 Ω VDS = 10 V, ID =20A, VGS = 5V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 24 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A VSD Drain to Source Diode Forward Voltage,V GS = 0V, I SD =4A,T J = 25℃ -- -- 1.2 V Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. Device mounted on FR-4 PCB, 1inch x 0.85inch x 0.062 inch 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% NOV 2022 Version1.0 2/9 www.ascendsemi.com 0755-86970486 ASDM20N20KQ 20V N-Channel MOSFET N- Channel Typical Characteristics 2.0V 4 5 TC=25℃ impulse=250uS 4 2.5V 10V 1.5V 3 I D - Drain Current (A) ID - Drain Current (A) 5 1.2V 2 1 1.0V 0 0 1 2 3 4 25℃ 3 2 1 0 5 0 1 Vds Drain-Source Voltage (V) IF Forward Current (A) Rdson On-Resistance(mΩ) 5 5 Note：TJ=25℃ 40 VGS=2.5V 20 10 VGS= 0V 4 3 25℃ 2 1 0 0 1 2 3 0 4 I D - Drain Current (A) Coss Crss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Note: VGS=0V, f=1Mhz Vgs Gate-Source Voltage (V) Ciss 10 Figure 5. Capacitance Characteristics NOV 2022 Version1.0 3/9 0.4 0.6 0.8 1.0 1.2 Note: VDS=10V, ID=4.3A 8 6 4 2 0 VDS Drain-to-Source Voltage (V) 0.2 V F ,Forward Voltage [V] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Capacitance [pF] 4 Figure 2. Transfer Characteristics 50 0 3 Vgs Gate-Source Voltage (V) Figure 1. On-Region Characteristics 30 2 0 1 2 3 4 5 Qg Gate Charge (nC) Figure 6. Gate Charge Characteristics www.ascendsemi.com 0755-86970486 ASDM20N20KQ 20V N-Channel MOSFET N- Channel Typical Characteristics (Continued) 0.15 Drain-Source On Resistance Voltage(Normalized) -BVDSS Drain-Source Breakdown 0.5 RDS(ON),(Normalized) 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 0.12 0.09 0.06 0.03 0 12 0 Vgs Gate-Voltage (V) 3 6 9 12 Vgs Gate-Voltage (V) Figure 7. Breakdown Voltage Variation vs Gate-Voltage Figure 8. On-Resistance Variation vs Gate Voltage 100 6 10μs ID - Drain Current (A) I D - Drain Current (A) 10 100μs 1ms 10ms 1 100ms Limited by RDS(on) DC 0.1 TC=25℃ Note: TC=25℃, 0.1 1 2 1 0 TJ=150℃,Single pulse VDS (V) 0.01 4 10 20 100 Vds Drain-Source Voltage (V) 25 50 75 100 125 150 T J -Junction Temperature(℃) Figure 10. Maximum PContinuous Drain Currentvs Case Temperature Figure 9. Maximum Safe Operating Area -1 10 D=0.5 D=0.2 D=0.1 t1 PDM r(t),Normalized Effective Transient Thermal Impedance 100 D =0 .0 5 D =0 .0 2 D=0.01 10-2 10-3 -6 10 t2 Notes: Single pulse 1.Dty factor D=t1/t2 2.Peak TJ=PDM*ZthJC+T TP(s) 10 -5 10 -4 10 -3 10 -2 C 10 1 10 2 3 10 Square Wave Pluse Duration(sec) Figure 11. Transient Thermal Response Curve NOV 2022 Version1.0 4/9 www.ascendsemi.com 0755-86970486 ASDM20N20KQ 20V N-Channel MOSFET Gate Charge Test Circuit & Waveform Current Regulator 50KΩ 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA R1 R2 Charge Current Sampling (IG) Current Sampling (ID) Resistor Resistor Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated VDS ) RG DUT Vin 10V 10% td(on) tr td(off) t on t off tf Unclamped Inductive Switching Test Circuit & Waveforms LL EAS = VDS Vary tp to obtain required peak ID ID 1 ---- LL IAS2 2 BVDSS IAS RG C VDD ID (t) DUT VDS (t) VDD 10V tp NOV 2022 Version1.0 tp 5/9 www.ascendsemi.com Time 0755-86970486 ASDM20N20KQ 20V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS -IS L Driver VGS RG Same Type as DUT VDD dv/dtcontrolled controlledby by밨 RGG ••dv/dt controlled pulse period ••IISSD controlled byby Duty Factor 밆? VGS Gate Pulse Width D = -------------------------Gate Pulse Period VGS ( Driver ) 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop NOV 2022 Version1.0 6/9 www.ascendsemi.com 0755-86970486 ASDM20N20KQ 20V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package ASDM20N20KQ-R 20N20 TO-252 PACKAGE Tape&Reel Quantity 2500/ Reel MARKING TO-252 NOV 2022 Version1.0 Packing 20N20 7/9 www.ascendsemi.com 0755-86970486 ASDM20N20KQ 20V N-Channel MOSFET TO-252 NOV 2022 Version1.0 8/9 www.ascendsemi.com 0755-86970486 ASDM20N20KQ 20V N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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