AGM425MA

AGM425MA ● General Description The AGM425MA combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology BVDSS RDSON ID 40V 18mΩ 23A -40V 32mΩ -20A PDFN5*6 Pin Configuration ■ Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance D1 D2 ● Application ■MB/VGA Vcore G1 G2 ■SMPS 2nd Synchronous Rectifier ■POL application ■BLDC Motor driver S1 S2 Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width AGM425MA AGM425MA PDFN5*6 --mm --mm Quantity 3000 Table 1. Absolute Maximum Ratings (TA=25℃) Rating Symbol N-Ch P-Ch Units 40 -40 V ±20 ±20 V 23 -20 A Drain Current-Continuous(Tc=100℃) 18 -12.6 A Drain Current-Continuous@ Current-Pulsed (Note 2) 46 -80 A Total Power Dissipation(Tc=25℃) 25 27.8 W Total Power Dissipation(Tc=100℃) 10 11 W Avalanche energy (Note 3) 28 18 mJ Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) Drain Current-Continuous(Tc=25℃) ID IDM (pluse) PD EAS TJ,TSTG (Note 1) Operating Junction and Storage Temperature Range -55 To 150 -55 To 150 ℃ Table 2. Thermal Characteristic Symbol Parameter Typ Max Unit RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 62 ℃/W RθJC Thermal Resistance Junction-Case1 --- 5 ℃/W www.agm-mos.com 1 VER2.5 AGM425MA Table 3. N- Channel Electrical Characteristics (TA=25℃unless otherwisenoted) Conditions Parameter Symbol Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 40 -- -- V IDSS Zero Gate Voltage Drain Current VDS=40V,VGS=0V -- -- 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.0 1.4 2.0 V gFS Forward Transconductance VDS=5V,ID=10A -- 12 -- S RDS(on) Drain-Source On-State Resistance VGS=10V, ID=15A -- 18 25 mΩ VGS=4.5V, ID=10A -- 25 33 mΩ -------- 593 593 76 76 56 56 2.6 . -------- pF pF pF pF pF p Ω --------------- 8.9 8.9 2.2 2.2 41 41 2.7 2.7 5.5 5.5 1.25 1.25 2.5 2.5 --------------- nS nS nS nS nS nS nS nS nC nC nC nC nC nC --------- --------- 23 23 1.2 1.2 ----- A A V V ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Switching Times w c ng mes Turn-on Delay Time td(on) urn-on e ay me td(on) Turn-on Rise Time tr urn-on se me r Turn-Off Delay Time td(off) urne ay me td(off) Turn-Off Fall Time tf urna me tf Total Gate Charge Qg oa ae arge Qg Gate-Source Charge Qgs a e- ource arge gs Gate-Drain Charge Qgd a e- ra n arge gd Source-Drain Diode Characteristics ISD SD VSD SD trr trr Qrr Qrr Source-Drain Current(Body Diode) ource- ra n urren o y o e Forward on Voltage orwar on o age Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Reverse Recovery harge VDS=15V,VGS=0V, F=1MHZ VGS=0V, VDS=0V,f=1.0MHz VDS=0V,f=1.0MHz VGS=10V,VDS=20V, ID=1A,RGEN=3.3Ω VGS=4.5V, VDS=12V, ID=20A VGS=0V,IS=1A = , = IF=1A , dI/dt=100A/µs , TJ=25℃ nc Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃ www.agm-mos.com 2 VER2.5 AGM425MA Table 3. P-Channel Electrical Characteristics (TA=25℃unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250μA -40 -- -- V IDSS Zero Gate Voltage Drain Current VDS=-40V,VGS=0V -- -- -1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=-250μA -1.0 -1.5 -2.5 V gFS Forward Transconductance VDS=-5V,ID=-10A -- 18 -- S RDS(on) Drain-Source On-State Resistance VGS=-10V, ID=-15A -- 32 45 mΩ VGS=-4.5V, ID=-10A -- 41 52 mΩ VDS=-20V,VGS=0V, F=1MHZ -- 1080 -- pF -- 87 -- pF -- 77 -- pF -- 11 -- Ω -- 5.9 -- nS -- 7.1 -- nS -- 25 -- nS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time -- 8.2 -- nS Qg Total Gate Charge -- 17 -- nC -- 4.2 -- nC -- 3.7 -- nC -- -- -20 A Qgs Gate-Source Charge Qgd Gate-Drain Charge VGS=-10V,VDS=-20V, ID=-6A,RGEN=3Ω VGS=-10V, VDS=-20V, ID=-6A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=-6A -- -- -1.2 V trr Reverse Recovery Time IF=-6A , dI/dt=100A/µs , -- -- -- ns Qrr Reverse Recovery Charge TJ=25℃ -- -- -- nc Notes 1.The maximum current rating is package limited. Notes2.RepetitiveRating: Pulsewidthlimitedby maximumjunction temperatureNotes 3.EAS condition: TJ=25℃ www.agm-mos.com 3 VER2.5 AGM425MA N-Channel Typical Characteristics 40 12 ID=12A VGS=10V 35 VGS=7V 8 VGS=5V RDSON (mΩ) ID Drain Current (A) 10 30 VGS=4.5V 6 4 VGS=3V 25 2 20 0 0 0.5 1 1.5 2 2 VDS Drain-to-Source Voltage (V) 4 6 8 10 VGS (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 10 12 VGS Gate to Source Voltage (V) IS Source Current(A) VDS=20V 8 TJ=150℃ TJ=25℃ 4 0 0.00 ID=12A 8 6 4 2 0 0.25 0.50 0.75 0 1.00 4 8 12 16 QG , T o t a l G a t e C h a r g e ( n C ) VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance 1.8 1.7 Normalized VGS(th) 1.4 1.4 1.1 1 0.8 0.6 0.5 0.2 0.2 -50 0 50 100 -50 150 Fig.5 Normalized VGS(th) vs. TJ www.agm-mos.com 0 50 100 150 TJ , Junction Temperature (℃) TJ ,Junction Temperature (℃ ) Fig.6 Normalized RDSON vs. TJ 4 VER2.5 AGM425MA 1000 100 F=1.0MHz 10us 100us 10 100 ID (A) Capacitance (pF) Ciss Coss 10ms 100ms DC 1 Crss TC=25℃ Single Pulse 10 0 1 5 9 13 17 21 25 0.1 1 VDS Drain to Source Voltage (V) 10 100 VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (Rthjc) 1 DUTY=0.5 0.3 0.1 0.1 0.05 PDM 0.02 Ton 0.01 T D = Ton/T Tj peak = TC + PDM x Rthjc SINGLE PULSE 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.10 Switching Time Waveform www.agm-mos.com Fig.11 Unclamped Inductive Switching Wave 5 VER2.5 AGM425MA P-Channel Typical Characteristics 30 30 VDS= -5V VGS = -10V 20 Drain current -ID (A) Drain current -ID (A) VGS = -4.5V VGS = -3.5V VGS = -3.5V 10 VGS = -3V 0 0 1 2 3 4 Drain−source voltage -VDS (V) 20 10 0 5 Figure 1. Output Characteristics On-Resistance RDS (on) (mΩ) Source current -IS (A) 4 0.2 0.4 0.6 0.8 1.0 5 150 100 50 0 1.2 ID= -6A 200 Source−drain voltage -VSD (V) 3 0 6 9 12 15 Gate−source voltage -VGS (V) Figure 3. Forward Characteristics of Reverse Figure 4. RDS(ON) vs. VGS 2.5 80 2.0 60 Normalized RDS (on) On-Resistance RDS (on) (mΩ) 3 250 1 VGS = -4.5V 40 VGS = -10V 20 0 2 Gate−source voltage -VGS (V) Figure 2. Transfer Characteristics 10 0.1 1 0 1.5 1.0 0.5 0 2 4 6 8 0.0 10 Drain current -ID (A) Figure 5. RDS(ON) vs. ID www.agm-mos.com -50 -25 0 25 50 75 Temperature Tj(°C) 100 125 150 Figure 6. Normalized RDS(on) vs. Temperature 6 VER2.5 AGM425MA 10000 Ciss Capacitance（pF） 1000 100 Coss Crss 10 1 F=1.0MHz 0 10 20 30 Drain-source voltage -VDS（V） 40 Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics 30 1000 Drain current -ID (A) Power Dissipation PD(W) 100 20 10 0 0 25 50 75 100 Case Temperature TC (°C) 125 10 100μs DC 1 1ms 10ms Limited by RDS(on) Single Pulse TC=25℃ 0.1 0.01 150 10μs TJ=150℃ 0.1 Figure 9. Power Dissipation 1 10 100 Drain−source voltage -VDS (V) Figure10. Safe Operating Area Normalized RθJC ℃/W) 10 1 Duty = 1.0 Duty = 0.5 0.1 Duty = 0.2 Duty = 0.1 Duty = 0.05 0.01 Duty = 0.02 Duty = 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, Pulse Width(S) Figure 11. Normalized Maximum Transient Thermal Impedance www.agm-mos.com 7 VER2.5 AGM425MA Test Circuit VGS Qg RL VDS VGS Qgs Qgd DUT IG=const Figure A. Gate Charge Test Circuit & Waveforms RL VDS RG VDD VGS DUT VGS Figure B. Switching Test Circuit & Waveforms L VDS ID RG VDD DUT VGS tp Figure C. Unclamped Inductive Switching Circuit & Waveforms www.agm-mos.com 8 VER2.5 AGM425MA H D2 D L1 Dimensions:PDFN5*6 E2 E L2 k L E2 E E1 L2 D1 e A2 d b SYMBOL A MILLIMETER MIN 0.900 A 1.100 0~0.05 4.824 4.900 4.976 D1 3.910 4.010 4.110 D2 4.924 5.000 5.076 E 5.924 6.000 6.076 E1 3.375 3.475 3.575 E2 5.674 5.750 5.826 b 0.350 0.400 0.450 1.270 TYP. L 0.534 L1 0.424 L2 0.610 0.686 0.500 0.576 1.800 REF. k 1.190 1.290 1.390 H 0.549 0.625 0.701 1.100 d 9 1.000 D e www.agm-mos.com MAX 0.254 REF. A2 A A1 A1 Typ. 1.200 1.300 0.100 VER2.5 AGM425MA Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on August 10, 2022. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 10 VER2.5