0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
CT3407M

CT3407M

  • 厂商:

    CORETONG(芯通)

  • 封装:

    SOT23-3

  • 描述:

    MOSFETs VDS=30V ID=4.1A PD=300mW SOT23-3

  • 数据手册
  • 价格&库存
CT3407M 数据手册
CT3407M P-CHANNEL ENHANCEMENT MODE POWER MOSFET »Features ■ Simple Drive Requirement ■ Small Package Outline BVDSS RDS(ON)typ ■ Surface Mount Device ■ RoHS Compliant & Halogen-Free ID -30V 48mΩ -4.1 »Description CT3407M is from Coretong innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of »Schematic & PIN Configuration SOT-23 »Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V1 Drain Current, VGS @ 10V1 Pulsed Drain Current2 PD@TA=25℃ Total Power Dissipation3 TSTG Storage Temperature Range Operating Junction Temperature Range TJ »Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 www.coretong.com Rating -30 ±20 -4.1 -3.2 -15 0.3 -55 to 150 150 Units V V A A A W Value 100 Unit ℃/W ℃ ℃ 1/4 CT3407M P-CHANNEL ENHANCEMENT MODE POWER MOSFET »Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance Test Conditions Min. Typ. Max. Units VGS=0V, ID=250uA -30 - - V VGS=10V, ID=-4.1A - 48 65 mΩ VGS=-4.5V, ID=-3A - 60 95 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA -1 - -3 V gfs Forward Transconductance VDS=5V, ID=-4A 5.5 - - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - -1 uA IGSS Gate-Source Leakage VGS=±20V, VDS=0V - - ±100 nA td(on) Turn-on Delay Time - 8.5 - ns tr td(off) Rise Time - 4.5 - ns - 26 - ns tf Ciss Fall Time VDS=-16V ID=1A RG=6Ω VGS=-4.5V - 12.5 - ns - 700 - pF Coss Output Capacitance - 120 - pF Crss Reverse Transfer Capacitance VGS=0V VDS=-6V f=1.0MHz - 75 - pF Min. Typ. Max. Units - - -1.2 V Turn-off Delay Time Input Capacitance »Source-Drain Diode Symbol Parameter VSD Forward On Voltage² Test Conditions IS=1A, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t
CT3407M 价格&库存

很抱歉,暂时无法提供与“CT3407M”相匹配的价格&库存,您可以联系我们找货

免费人工找货
CT3407M
  •  国内价格
  • 1+0.12398

库存:3000