BAV99LT1G

BAV99 Dual series switching diode FEATURES  Fast switching speed Max:4ns.  High conductance.  Connected in series.  Surface mount package ideally suited SOT-23  to r for automatic insertion. MSL1. APPLICATIONS High-speed switching in thick and thin-film circuits. Marking A7 mi BAV99 Package Code co Type No. nd ORDERING INFORMATION uc  SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Value Unit VR 75 V IF 215 mA Peak forward surge current IFM 500 mA Peak repetitive reverse voltage VRRM 75 V Repetitive peak forward current IFRM 450 mA IFSM 2.0 1.0 0.5 A Power dissipation Pd 350 mW Thermal resistance junction to ambient air RθJA 556 ℃/W Operating and storage temperature range Tj,TSTG -65 to +150 ℃ Se Parameter Reverse voltage JS MI CR O Forward current Peak forward surge current @t=1.0μs @t=1.0ms @t=1.0s www.jsmsemi.com 第１页，共３页 BAV99 Dual series switching diode ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Typical Reverse breakdown voltage V(BR) Test conditions IR=2.5μA MAX UNIT 75 Forward voltage VF IF=1mA IF=10mA IF=50mA IF=150mA Diode capacitance CD VR=0V Reverse recovery time trr IF=IR=10mA, Irr=0.1×IR,RL=100Ω uc IR VR=20V VR=75V VR=25V Tj=150℃ VR=75V Tj=150℃ V 25 2.5 30 50 nA μA μA μA 715 855 1000 1250 mV nd f=1MHz 2.0 pF 4.0 nS co Reverse voltage leakage current MIN to r Parameter JS MI CR O Se mi TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.jsmsemi.com 第２页，共３页 BAV99 Dual series switching diode PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 A Min Max A 2.70 3.10 B 1.10 1.50 0.9 1.1 0.3 0.5 0.35 0.48 G 1.80 2.00 H 0.02 0.1 J 0.05 0.15 K 2.20 2.60 E K B C D uc E J D nd G co H CR O 0.95 Se SOLDERING FOOTPRINT 0.95 All Dimensions in mm mi C to r Dim JS MI 2.00 0.90 0.80 Unit : mm PACKAGE INFORMATION Device Package Shipping BAV99 SOT-23 3000/Tape&Reel www.jsmsemi.com 第３页，共３页