HY4306P

HY4306P/B N-Channel Enhancement Mode MOSFET Features • Pin Description 60V/230A RDS(ON) = 2.6 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available G G (RoHS Compliant) D D S S TO-220FB-3L TO-263-2L Applications  Switching application  Power Management for Inverter Systems. N-Channel MOSFET Ordering and Marking Information P HY4306 B HY4306 YYXXXJWW G YYXXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the leadFree requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-oduct and/or to this document at any time without notice. www.hymexa.com 1 V1.0 HY4306P/B Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 230 A TC=25°C 880** A TC=25°C 230 TC=100°C 155 TC=25°C 258 TC=100°C 129 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case 0.58 RJA Thermal Resistance-Junction to Ambient 62.5 A W °C/W Avalanche Ratings EAS Avalanche Energy, Single Pulsed L=0.5mH J 1.4*** Note： * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=48V Electrical Characteristics Symbol Parameter (TC = 25C Unless Otherwise Noted) Test Conditions HY4306 Min. Typ. Max. 60 - - - - 1 - - 10 Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON)* VGS=0V, IDS=250A VDS=60V, VGS=0V TJ=85°C V A Gate Threshold Voltage VDS=VGS, IDS=250A 2.0 3.0 4.0 V Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA Drain-Source On-state Resistance VGS=10V, IDS=115 A - 2.6 3.0 m ISD=115A, VGS=0V - 0.8 1.2 V - 48 - ns - 72 - nC Diode Characteristics VSD * Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge www.hymexa.com ISD=115 A, dlSD/dt=100A/s 2 V1.0 HY4306P/B Electrical Characteristics (Cont.) Symbol Parameter (TC = 25C Unless Otherwise Noted) Test Conditions HY4306 Min. Typ. Max. - 2.2 - - 7219 - - 1093 - - 558 - - 26 - - 18 - - 40 - - 54 - - 171 - - 30 - - 63 - Unit Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=30V, R G=6 , I DS =115A, VGS=10V, Turn-off Fall Time  pF ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=48V, VGS=10V, IDS=115A nC Note * : Pulse test ; pulse width 300s, duty cycle2%. www.hymexa.com 3 V1.0 HY4306P/B Typical Operating Characteristics Drain Current Power Dissipation 250 ID - Drain Current (A) Ptot - Power (W) 350 300 250 200 150 225 limited by package 200 175 150 125 100 100 75 50 50 o o 0 0 20 TC=25 C,VG=10V 25 TC=25 C 0 40 60 20 40 60 80 100 120 140 160 180 200 80 100 120 140 160 180 200 TC - Case Temperature (°C) TC - Case Temperature (°C) Safe Operation Area im it ID - Drain Current (A) 1000 on )L 100us Rd s( 100 1ms 10ms 10 DC 1 o TC=25 C 0.1 0.01 0.1 1 10 100 300 VDS - Drain - Source Voltage (V) Thermal Transient Impedance 10 Normalized Effective Transient Duty = 0.5 0.2 1 0.1 0.05 0.1 0.02 0.01 0.01 Single Mounted on minimum pad o RJA : 62.5 C/W 0.001 0.0001 0.001 0.1 0.01 1 10 Square Wave Pulse Duration (sec) www.hymexa.com 4 V1.0 HY4306P/B Typical Operating Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 400 4.5 VGS= 5.5,6,7,8,9,10V RDS(ON) - On - Resistance (mΩ) 350 ID - Drain Current (A) 300 5V 250 200 150 100 4.5V 50 0 0.0 4V 1.0 2.0 3.0 4.0 5.0 4.0 3.5 3.0 2.5 2.0 1.5 1.0 6.0 VGS=10V 0 50 VDS - Drain - Source Voltage (V) 100 150 Gate-Source On Resistance Gate Threshold Voltage 1.6 IDS =250μA IDS= 115A 6 1.4 Normalized Threshold Voltage RDS(ON) - On - Resistance (mΩ) 2 50 ID - Drain Current (A) 7 5 4 3 2 1 0 200 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 0.2 -50 -25 10 VGS - Gate - Source Voltage (V) www.hymexa.com 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 V1.0 HY4306P/B Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 2.0 o Tj=25 C 100 IDS = 115A 1.8 1.6 IS - Source Current (A) Normalized On Resistance 200 VGS = 10V 1.4 1.2 1.0 0.8 10 o Tj=150 C 1 0.6 o RON@Tj=25 C: 2.6mΩ 0.4 -50 -25 0 25 50 75 0.1 0.0 100 125 150 1.0 1.2 Gate Charge 1.4 10 VDS= 48V 9 VGS - Gate-source Voltage (V) 9000 C - Capacitance (pF) 0.8 Capacitance Frequency=1MHz Ciss 7500 6000 4500 3000 Coss IDS= 115A 8 7 6 5 4 3 2 1 Crss 0 0.6 VSD - Source - Drain Voltage (V) 10500 0 0.4 Tj - Junction Temperature (°C) 12000 1500 0.2 8 16 24 32 0 40 VDS - Drain - Source Voltage (V) www.hymexa.com 0 35 75 105 140 175 QG - Gate Charge (nC) 6 V1.0 HY4306P/B Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com 7 V1.0 HY4306P/B Device Per Unit Package Type Unit Quantity TO-220FB-3L Tube 50 Package Information TO-220FB-3L COMMON DIMENSIONS SYMBOL www.hymexa.com mm MIN NOM MAX A 4.37 4.57 4.77 A1 1.25 1.30 1.45 A2 2.20 2.40 2.60 b 0.70 0.80 0.95 b2 1.17 1.27 1.47 c 0.40 0.50 0.65 D 15.10 15.60 16.10 D1 8.80 9.10 9.40 D2 5.50 - - E 9.70 10.00 10.30 E3 7.00 - - e 2.54 BSC e1 5.08 BSC H1 6.25 6.50 6.85 L 12.75 13.50 13.80 L1 - 3.10 3.40 ΦP 3.40 3.60 3.80 Q 2.60 2.80 3.00 8 V1.0 HY4306P/B Device Per Unit Package Type Unit Quantity TO-263-2L Reel 50 Package Information TO-263-2L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 4.37 4.57 4.77 A1 1.22 1.27 1.42 A2 2.49 2.69 2.89 A3 0 0.13 0.25 b 0.7 0.81 0.96 b1 1.17 1.27 1.47 c 0.3 0.38 0.53 D1 8.5 8.7 8.9 D4 6.6 - - E 9.86 10.16 10.36 E5 7.06 - - e 2.54 BSC H 14.7 15.1 15.5 H2 1.07 1.27 1.47 L 2 2.3 2.6 L1 1.4 1.55 1.7 L4 θ www.hymexa.com 0.25 BSC 0° 5° 9 9° V1.0 HY4306P/B Classification Profile Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 C 150 C 60-120 seconds 150 C 200 C 60-120 seconds 3 C/second max. 3C/second max. 183 C 60-150 seconds 217 C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 C/second max. 6 C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hymexa.com 10 V1.0 HY4306P/B Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Package Thickness