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HE2280A33MR

HE2280A33MR

  • 厂商:

    HEERMICR(赫尔半导体)

  • 封装:

    SOT23-3

  • 描述:

    线性稳压器/LDO SOT23-3L Vo=3.3V Vin=80V -40℃~+125℃(Tj)

  • 数据手册
  • 价格&库存
HE2280A33MR 数据手册
HE2280 series 80V 150mA Low Power LDO Features • Low Power Consumption: 2µA (Typ) • Maximum Output Current: 150mA • Small Dropout Voltage • • • • • • 700mV@100mA (Vout=3.3V) • High Input Voltage: Up to 80V • High Accurate: Good Transient Response Integrated Short-Circuit Protection Over-Temperature Protection Output Current Limit Stable with Ceramic Capacitor Support Fixed Output Voltage 3.3 and 5.0V HE2280(A) ±1% Output Voltage • Available Package • RoHS Compliant and Lead (Pb) Free SOT23-3 \ SOT89-3 Application • Portable, Battery Powered Equipment • Battery-powered equipment • Weighting Scales • Smoke detector and sensor • Car Audio/Video Equipmen • Home Automation Description The HE2280 series is a high voltage,ultralow-power,low dropout voltage regulator. The device can deliver 150mA output current with a dropout voltage of 700mV and allows an input voltage as high as 80V. The typical quiescent current is only 2µA. The device is available in fixed output voltages of 3.3,and 5.0V.The device features integrated short-circuit and thermal shutdown protection.Although designed primarily as fixed voltage regulators, the device can be used with external components to obtain variable voltages. Selection Table Part No. Output Voltage HE2280A33PR 3.3V SOT89-3 **** HE2280A50PR 5.0V SOT89-3 **** HE2280A33MR 3.3V SOT23-3 **** HE2280A50MR 5.0V SOT23-3 **** Ver1.2 Package 1 Marking Aug 3,2021 HE2280 series 80V 150mA Low Power LDO Application Circuits VIN VIN VOUT VOUT GND 10uF 10uF CIN COUT Note:External Component Recommendation:(VIN>45V) 1) CIN=100uF/100V(Electrolysis) 2) VIN/R1=50R(0805) Pin Assignment Function Block Diagram Ver1.2 2 Aug 3,2021 HE2280 series 80V 150mA Low Power LDO Absolute Maximum Ratings (1) (2) Parameter Symbol Maximum Rating Unit VIN VSS -0.3~VSS+80.0 V VOUT VSS -0.3~VSS+6.0 V IOUT 400 mA Input Voltage Output Current Power Dissipation Thermal Resistance SOT23-3 400 Pd SOT89-3 SOT23-3 RθJA SOT89-3 mW 500 (3) 250 ℃/W 200 ℃/W Operating Temperature Topr -40~85 ℃ Storage Temperature Tstg -40~125 ℃ Soldering Temperature & Time Tsolder 260℃, 10s Note (1): Exceeding these ratings may damage the device. Note (2): The device is not guaranteed to function outside of its operating conditions Note (3): The package thermal impedance is calculated in accordance to JESD 51-7. ESD Ratings Item Description Value Unit V(ESD-HBM) Human Body Model (HBM) ANSI/ESDA/JEDEC JS-001-2014 Classification, Class: 2 ±4000 V V(ESD-CDM) Charged Device Mode (CDM) ANSI/ESDA/JEDEC JS-002-2014 Classification, Class: C0b ±200 V JEDEC STANDARD NO.78E APRIL 2016 Temperature Classification, Class: I ±150 mA ILATCH-UP ESD testing is performed according to the respective JESD22 JEDEC standard.The human body model is a 100 pF capacitor discharged through a 1.5kΩ resistor into each pin. The machine model is a 200pF capacitor discharged directly into each pin. Recommended Operating Conditions Parameter MIN. MAX. Units Supply voltage at VIN --- 60 V Operating junction temperature range, Tj -40 125 °C Operating free air temperature range, TA -40 85 °C Note : All limits specified at room temperature (TA = 25°C) unless otherwise specified. All room temperature limits are 100% production tested. All limits at temperature extremes are ensured through correlation using standard Statistical Quality Control (SQC) methods. All limits are used to calculate Average Outgoing Quality Level (AOQL). Ver1.2 3 Aug 3,2021 HE2280 series 80V 150mA Low Power LDO Electrical Characteristics (Test Conditions:VIN= Vset+1V, VOUT=Vset,CIN=10uF, COUT=10uF,TA=25℃, unless otherwise specified.) Parameter Symbol Input Voltage VIN Supply Current IQ VIN=12V ILOAD=0mA — VOUT1 VIN=12V IOUT=10mA VOUT2 Maximum Output Current IOUT(Max) Dropout Voltage VDROP VOUT=3.3V Output Voltage HE2280 (A) Output Voltage HE2280 (B) (1) Line Regulation ΔVOUT/ ΔVIN•VOUT Load Regulation ΔVOUT Short Current Power Supply Rejection Rate Output Noise Voltage ISHORT Output Voltage Temperature Coefficient PSRR eNO ΔVOUT/ ΔT•VOUT Conditions Max Units 80 V 2.0 3.0 uA Vset*0.99 Vset Vset*1.01 V VIN=12V IOUT=10mA Vset*0.98 Vset Vset*1.02 V — — 200 — mA VIN= Vset-0.1V IOUT=10Ma — 70 — VIN= Vset-0.1V IOUT=100mA IOUT=1mA (Vset+0.5v)≦VIN≦55V VIN=12V 1mA≦IOUT≦100mA Min Typ mV — 700 — — 0.01 — %/V — 0.02 — %/ mA RL=1Ω VIN=12V VOUT=3.3V f=1KHz,IOUT= 10mA COUT=1uF BW = 300Hz~50kHz — 80 — mA — 70 — dB — 50 — uVRMS IOUT=10mA — 100 — ppm/℃ Note: (1)Dropout Voltage is the voltage difference between the input and the output at which the output voltage drops 2% below its nominal value. Ver1.2 4 Aug 3,2021 HE2280 series 80V 150mA Low Power LDO Typical Performance Characteristics: Test Condition: TA=25°C,IOUT=1mA, COUT=10uF, unless otherwise noted Ver1.2 5 Aug 3,2021 HE2280 series 80V 150mA Low Power LDO H E 2 0 2 1 A x x Ver1.2 6 Aug 3,2021 HE2280 series 80V 150mA Low Power LDO Application Guideline Input Capacitor A 10μF ceramic capacitor is recommended to connect between VDD and GND pins to decouple input power supply glitch and noise. The amount of the capacitance may be increased without limit. This input capacitor must be located as close as possible to the device to assure input stability and less noise. For PCB layout, a wide copper trace is required for both VIN and GND. Output Capacitor An output capacitor is required for the stability of the LDO. The recommended output capacitance is 10μF, ceramic capacitor is recommended, and temperature characteristics are X7R or X5R. Higher capacitance values help to improve load/line transient response. The output capacitance may be increased to keep low undershoot/overshoot. Place output capacitor as close as possible to VOUT and GND pins. Dropout Voltage The dropout voltage refers to the voltage difference between the VIN and VOUT pins while operating at specific output current. The dropout voltage VDROP also can be expressed as the voltage drop on the pass-FET at specific output current (IRATED) while the pass-FET is fully operating at ohmic region and the pass-FET can be characterized asan resistance RDS(ON). Thus the dropout voltage can bedefined as (VDROP = VIN − VOUT = RDS(ON) x IRATED). Fornormal operation, the suggested LDO operating range is (VIN > VOUT + VDROP) for good transient response and PSRR ability. Vice versa, while operating at the ohmic region will degrade the performance severely. Thermal Application For continuous operation, do not exceed the absolute maximum junction temperature. The maximum power dissipation depends on the thermal resistance of the IC package, PCB layout, rate of surrounding airflow, and difference between junction and ambient temperature. The maximum power dissipation can be calculated as below: TA=25°C, PCB, The max PD= (125°C − 25°C) / (Thermal Resistance °C/W) Power dissipation (PD) is equal to the product of the output current and the voltage drop across the output pass element, as shown in the equation below: PD = (VIN – VOUT) × IOUT Ver1.2 7 Aug 3,2021 HE2280 series 80V 150mA Low Power LDO Packaging Information SOT23-3L Ver1.2 8 Aug 3,2021 HE2280 series 80V 150mA Low Power LDO 3-pin SOT89 Outline Dimensions Ver1.2 9 Aug 3,2021
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