KY4953

ShenZhen HanKingYuan Electronic Co.,Ltd KY4953 -30V Dual P-Channel Mosfet FEATURES SOP-8 ● RDS(ON) ≤ 55mΩ( 43mΩ Typ.) @VGS=-10V ● RDS(ON) ≤ 90mΩ( 55mΩ Typ.) @VGS=-4.5V APPLICATIONS ● PWM Applications ● Load Switch ● Power Management MARKING 1: S1 3: S2 5: D2 7: D1 2: G1 4: G2 6: D2 8: D1 P-CHANNEL MOSFET 4953 4953 : Device Code MAXIMUM RATINGS Ta=25℃ unless otherwise specified Parameter Symbol Rating Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ± 20 V Continuous Drain Current -5.1 A Pulsed Drain Current Power Dissipation -20 2.5 A W Junction-to-Ambient 50 ℃/W Junction Temperature 150 ℃ –55 to 150 ℃ ID IDM PD RθJA TJ TSTG Operating Junction and Storage Temperature Range www.scr-ky.com 1／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY4953 ELECTRICAL CHARACTERISTICS Ta= 25℃ unless otherwise specified Parameter Symbol bol Test Condition Min. Typ. Max. Units OFF Characteristics VDSS Drain to Source Breakdown Voltage VGS= 0V, ID=-250µA -30 -- -- V IDSS Drain to Source Leakage Current VDS= -30V,VGS= 0V -- -- -1 µA IGSS Gate to Source Forward Leakage VGS= ±20V,VDS= 0V -- -- ±100 nA ON Characteristics VGS(TH) Gate Threshold Voltage VDS=VGS,ID=-250µA -1 -1.3 -2 V RDS(O N) Drain-to-Source On-Resistance VGS =-10V, ID=-5.1A -- 43 55 mΩ RDS(O N) Drain-to-Source On-Resistance VGS =-4.5V, ID=-4.2A -- 55 90 mΩ -- 520 -- -- 130 -- -- 70 -- -- 7 -- -- 13 -- -- 14 -- -- 9 -- -- 11 -- -- 2.2 -- -- 3 -- -- -0.86 -1.2 Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS= 0V,VDS= -15V f = 1.0MHz pF Switching Characteristics td(ON) tr Turn-on Delay Time td(OFF ) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain (“Miller ”) Charge Rise Time ID =-1A,VDS = -15V VGS = -10V, RG =6Ω ID =-5.1A,VDS = -15V VGS = -10V ns nC Source-Drain Diode Characteristics VSD Diode Forward Voltage www.scr-ky.com IS=-5.1A,VGS=0V TJ=25℃ V 2／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY4953 TYPICAL PERFORMANCE CHARACTERISTICS Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics 20 -ID (A) -5V -10V -ID (A) 15 TJ=25℃ -4.5V 12 15 -4V 9 10 6 -3.5V TJ=125℃ 5 3 VGS=-3V -VDS(V) 0 0 1 2 3 4 5 0 -VGS(V) 70 2 3 4 5 6 Figure 4: Body Diode Characteristics Figure 3:On-resistance vs. Drain Current RDS(ON) (mΩ) 1 0 10 -IS(A) 60 VGS= -4.5V 50 TJ=150℃ VGS= -10V 40 TJ=-50℃ TJ=-25℃ 1 30 20 10 0 0 -ID(A) 1 2 3 4 5 6 7 8 0.1 0.0 Figure 5: Gate Charge Characteristics 0.4 -VSD(V) 0.6 0.8 1.0 1.2 1.4 Figure 6: Capacitance Characteristics -VGS(V) 8 0.2 103 VGS=-10V ID=-5.1A C(pF) Ciss 6 4 Coss 102 Crss 2 0 0 Qg(nC) 2 4 www.scr-ky.com 6 8 10 12 101 0 -VDS(V) 10 20 30 40 50 60 3／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY4953 TYPICAL PERFORMANCE CHARACTERISTICS （cont.） Figure 7: Normalized Breakdown Voltage vs. Junction Temperature VBR(DSS)(V) 1.3 Figure 8: Normalized on Resistance vs. Junction Temperature RDS(on)(mΩ) 2.5 1.2 2.0 1.1 1.5 1.0 1.0 0.9 Tj (℃) 0 -100 -50 0 50 100 150 200 Figure 9: Maximum Safe Operating Area -ID(A) 0.5 -100 1ms 200 -ID(A) 3 100ms DC 2 TC=25℃ Single pulse 1 150 4 10ms 0.1 0.1 100 5 100μs 1 50 6 10μs 10 0 Figure 10: Maximum Continuous Drain Current vs. Case Temperature 7 Limited by RDS(on) Tj (℃) -50 1 -VDS (V) 10 0 100 0 25 50 Tc (℃) 75 100 125 150 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (SOP-8) 102 ZthJ-C(℃/W) 101 100 PDM D=0.5 t1 D=0.2 D=0.1 t2 D=0.05 D=0.02 D=0.01 Notes: Single pulse 1.Duty factor D=t1/t2 2.Peak TJ=PDM*ZthJC+TC TP(s) 10-1 10-2 -4 10 10-3 10-2 www.scr-ky.com 10-1 100 101 102 4／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY4953 SOP-8 PACKAGE OUTLINE DRAWING Symbol A A1 A2 b c D E1 E e L θ www.scr-ky.com Dimensions In Millimeters Min. Max. 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.700 5.100 3.800 4.000 5.800 6.200 1.27(BSC) 0.400 1.270 0° 8° Dimensions In Inches Min. Max. 0.053 0.069 0.004 0.010 0.063 0.061 0.013 0.020 0.006 0.010 0.185 0.200 0.150 0.157 0.228 0.244 0.050(BSC) 0.016 0.050 0° 8° 5／5