AGM015N10LL

AG GM015N10L LL ● General Description Product Summary The AGM015N10LL combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology RDSON ID 100V 1.25mΩ 300A TOLL-8L Pin Configuration ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low BVDSS D Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS ■ POL G 2nd Synchronous Rectifier S application ■ BLDC Pin Motor driver Description 1 Package Marking and Ordering Information Device Marking Device Device Package AGM015N10LL AGM015N10LL TOLL-8L Gate(G) 2,3,4,5,6,7,8 Source(S) 9 Drain(D) Reel Size Tape width Quantity ---- 2000 ---- Absolute Maximum Ratings (TA=25℃) Table 1. Parameter Symbol Value Unit VDS Drain-Source Voltage (VGS=0V） 100 V VGS Gate-Source Voltage (VDS=0V) ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 300 A Drain Current-Continuous(Tc=100℃) 267 A 1200 A Maximum Power Dissipation(Tc=25℃) 500 w Maximum Power Dissipation(Tc=100℃) 200 w 2800 mJ ID IDM (pluse) PD EAS TJ,TSTG Table 2. Drain Current-Continuous@ Current-Pulsed (Note 2) Avalanche energy (Note 3) Operating Junction and Storage Temperature Range -55 To 150 ℃ Thermal Characteristic Symbol Parameter Typ Max Unit RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 40 ℃/W RθJC Thermal Resistance Junction-Case1 --- 0.25 ℃/W www.agm-mos.com 1 VER2.5 AG GM015N10L LL Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit 100 -- -- V On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA IDSS Zero Gate Voltage Drain Current VDS=V,VGS=0V -- -- 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 2.0 -- 4.0 V gFS Forward Transconductance VDS=5V,ID=12A -- -- -- S RDS(on) Drain-Source On-State Resistance VGS=10V, ID=50A -- 1.25 1.7 mΩ VGS=4.5V, ID=25A -- 2.2 4.0 mΩ -- 11074 -- pF -- 1736 -- pF -- 176 -- pF -- -- -- Ω Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=50V,VGS=0V, F=1MHZ VGS=0V, VDS=0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time -- 40 -- nS tr Turn-on Rise Time -- 122 -- nS td(off) Turn-Off Delay Time -- 144 -- nS tf Turn-Off Fall Time -- 127 -- nS Qg Total Gate Charge -- 157 -- nC Qgs Gate-Source Charge -- 70 -- nC Qgd Gate-Drain Charge -- 62 -- nC -- -- 300 A VGS=10V,VDS=50V ID=50A,RGEN=4.5Ω VGS=10V, VDS=50V, ID=50A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=50A -- -- 1.3 V trr Reverse Recovery Time IF=50A , dI/dt=100A/µs , -- 120 -- ns Qrr Reverse Recovery Charge TJ=25℃ -- 347 -- nc Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃ www.agm-mos.com 2 VER2.5 AG GM015N10L LL Typical Characteristics Power Capability Current Capability 350 600 300 ID - Drain Current (A) Ptot - Power (W) 500 400 300 200 100 250 200 150 100 50 o TC=25 C,VG=10V o TC=25 C 0 0 0 20 40 60 80 100 120 140 160 180 Tmp – Mounting Point Temp. (°C) 0 20 40 60 80 100 120 140 160 Tmp – Mounting Point Temp. (°C) Safe Operating Area Transient Thermal Impedance 2000 2 )L 300us s(o n 100 Rd ID - Drain Current (A) im it 100us 1ms 10 10ms DC 1 o TC=25 C 0.1 0.01 0.1 1 10 100 Normalized Effective Transient 1000 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 2 Single Pulse 0.01 1E-4 500 VDS - Drain-Source Voltage (V) www.agm-mos.com 1 1E-3 Mounted on 1in pad o RJC :0.25 C/W 0.01 0.1 1 10 Square Wave Pulse Duration (sec) 3 VER2.5 AG GM015N10L LL Typical Characteristics (cont.) Output Characteristics On Resistance 3.0 50 RDS(ON) - On Resistance (mΩ) VGS= 5,6,7,8,9,10V 45 ID - Drain Current (A) 40 35 30 25 20 15 10 4V 5 3V 0 0.0 0.2 0.4 0.6 0.8 2.5 2.0 VGS= 6V 1.5 1.0 VGS=10V 0.5 0.0 0 1.0 10 VDS - Drain-Source Voltage (V) Transfer Characteristics Normalized Threshold Voltage 40 35 30 25 20 15 10 5 2 3 4 5 6 7 8 9 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 10 VGS - Gate-Source Voltage (V) www.agm-mos.com 50 IDS= 250A IDS=50A 1 40 Normalized Threshold Voltage 1.6 45 RDS(ON) - On Resistance (mΩ) 30 ID - Drain Current (A) 50 0 20 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 4 VER2.5 AG GM015N10L LL Typical Characteristics (cont.) Normalized On Resistance Diode Forward Current 50 2.2 VGS = 10V 2.0 IDS = 50A 15 1.8 IS - Source Current (A) Normalized On Resistance 2.4 1.6 1.4 1.2 1.0 0.8 0.6 o Tj=150 C 10 o Tj=25 C 0.4 o 0.2 RON@Tj=25 C: 1.2m 0.0 -50 -25 0 25 50 1 0.0 75 100 125 150 Tj - Junction Temperature (°C) 0.2 Capacitance 0.6 0.8 1.0 1.2 Gate Charge 18000 10 Frequency=1MHz 16000 VDS= 50V VGS - Gate-Source Voltage (V) Ciss 14000 C - Capacitance (pF) 0.4 VSD - Source-Drain Voltage (V) 12000 10000 Coss 8000 6000 4000 2000 ID = 50A 8 6 4 2 Crss 0 0 10 20 30 40 50 60 70 0 80 VDS - Drain-Source Voltage (V) www.agm-mos.com 0 20 40 60 80 100 120 140 160 180 QG - Gate Charge (nC) 5 VER2.5 AG GM015N10L LL Package Dimensions TOLL-8L Package L1 A b1 E1 A1 R b3(3x) D1 H2 H1 c e(6x) e1(2x) E b(6x) Q L2 b2(2x) L L3 K H D D2(2x) D4 E2 BOTTOM VIEW TOP VIEW SYMBOL j i Detail "Z" Detail "Z" www.agm-mos.com 6 A A1 b b1 b2 b3 c D D1 D2 D4 E E1 E2 e e1 H H1 H2 i j K L L1 L2 L3 Q R 0 MILLIMETER NOM. 2.300 1.800 0.700 9.800 0.750 1.200 0.500 10.400 11.100 3.300 4.570 9.900 8.100 0.600 1.200 BSC 1.225 BSC 11.600 11.700 6.950 BSC 5.900 BSC 0.100 REF. 0.350 REF. 3.100 REF. 1.550 1.650 0.600 0.700 0.500 0.600 0.400 0.500 7.950 REF. 3.000 3.100 10˚REE. MIN. 2.200 1.700 0.600 9.700 0.650 1.100 0.400 10.300 11.000 3.200 4.470 9.800 8.000 0.500 MAX. 2.400 1.900 0.800 9.900 0.850 1.300 0.600 10.500 11.200 3.400 4.670 10.000 8.200 0.700 11.800 1.750 0.800 0.700 0.600 3.200 VER2.5 AG GM015N10L LL Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequencesDo not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on June 10, 2022. This document replaces andReplace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 7 VER2.5