S8050

S8050 TRANSISTOR (NPN) FEATURES SOT-23 Complimentary to S8550 Collector Current: IC=0.5A 1．BASE 2．EMITTER 3．COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC= 100µA, Collector-emitter breakdown voltage V(BR)CEO IC=1mA, Emitter-base breakdown voltage V(BR)EBO IE=100µA, IE=0 IB=0 IC=0 MIN TYP MAX UNIT 40 V 25 V 5 V Collector cut-off current ICBO VCB=40 V, IE=0 0.1 µA Collector cut-off current ICEO VCB=20V, IE=0 0.1 µA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 µA HFE(1) VCE=1V, IC= 50mA 200 HFE(2) VCE=1V, IC= 500mA 50 350 DC current gain Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA 1.2 V VCE=6V, Transition frequency Page 1 of 3 fT f=30MHz IC= 20mA 150 MHz 5/30/2011 Typical Characteristics Page 2 of 3 S8050 5/30/2011 PACKAGE OUTLINE Plastic surface mounted package; 3 leads Page 3 of 3 SOT-23 5/30/2011