G12P10TE

G12P10TE P-Channel Enhancement Mode Power MOSFET Description The G12P10TE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS ID (at VGS = -10V) RDS(ON) (at VGS = -10V) RDS(ON) (at VGS = -4.5V) 100% Avalanche Tested -100V -12A < 200mΩ < 220mΩ Schematic diagram l RoHS Compliant l ESD (HBM)>7.0KV Application l Power switch l DC/DC converters TO-220 Ordering Information Device Package Marking Packaging G12P10TE TO-220 G12P10 50pcs/Tube Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -100 V ID -12 A IDM -48 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 44.6 W EAS 25 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 55 ºC/W Maximum Junction-to-Case RthJC 2.8 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1744-V1.1) G12P10TE Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = -250µA -100 -- -- V IDSS VDS = -100V, VGS = 0V -- -- -1 μA IGSS VGS = ±20V -- -- ±10 uA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1 -1.6 -2.5 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -6A -- 170 200 VGS = -4.5V, ID = -6A -- 180 220 Forward Transconductance gFS VDS = -15V,ID = -6A -- 12 -- -- 1717 -- -- 50 -- -- 46 -- -- 33 -- -- 4 -- -- 7 -- -- 52 -- -- 12 -- -- 38 -- -- 28 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = -50V, f = 1.0MHz VDD = -50V, ID = -6A, VGS = -10V VDD = -50V, ID = -6A, RG = 9Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -12 A Body Diode Voltage VSD TJ = 25ºC, ISD = -6A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr -- 35 -- nC Reverse Recovery Time Trr -- 46 -- ns IF = -6A, VGS = 0V di/dt=-500A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1744-V1.1) G12P10TE Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1744-V1.1) G12P10TE Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics 8 8 -10V 6 5 -2.6V 4 -2.4V 3 2 VGS= -2.2V 1 0 0 1 VDS= -5V 7 -3V -4.5V -ID, Drain Current (A) -ID, Drain Current (A) 7 2 6 5 4 25℃ 3 2 1 3 0 4 0 -VDS, Drain-to-Source Voltage (V) -Vgs Gate-Source Voltage（V） RDS(on), On-Resistance (mΩ) 225 VGS= -4.5V 175 VGS= -10V 125 100 2 4 6 8 10 12 -ID-Drain Current (A) 1500 1000 500 Coss Crss 10 20 30 40 50 -VDS Drain-Source Voltage(V) www.gofordsemi.com VDD = -50V ID = -6A 8 6 4 2 0 10 20 30 40 -Is, Reverse Drain Current (A) Capacitance(pF) Ciss 0 6 Figure 6. Source-Drain Diode Forward 2500 0 5 Qg Gate Charge（nC） Figure 5. Capacitance 2000 4 10 0 0 3 Figure 4. Gate Charge 250 150 2 -VGS, Gate-to-Source Voltage (V) Figure 3.Drain Source On Resistance 200 1 60 TEL：0755-29961263 -VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1744-V1.1) G12P10TE Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 10. Safe Operation Area VGS = -10V ID = -6A -ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance ZthJC, Thermal Impedance (ºC/W) TJ, Junction Temperature (ºC) TJ(MAX)=150℃ TC=25℃ -VDS, Drain-Source Voltage(V) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1744-V1.1) G12P10TE TO-220 Package Information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1744-V1.1)