18N20F

18N20F N-Channel Enhancement Mode Power MOSFET Description The 18N20F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) 100% Avalanche Tested < 200V 18A 190mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-220F Ordering Information Device Package Marking Packaging 18N20F TO-220F 18N20F 50pcs/ Tube Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 200 V ID 18 A IDM 72 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 35 W EAS 90 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Maximum Junction-to-Case RthJC 3.6 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0606-V1.1) 18N20F Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 200 -- -- V IDSS VDS = 200V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 1.5 3.0 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 9A -- 123 190 mΩ Forward Transconductance gFS VGS = 5V, ID = 9A -- 8 -- S -- 852 -- -- 73 -- -- 15 -- -- 18 -- -- 4 -- -- 5.3 -- -- 42 -- -- 20.5 -- -- 125 -- -- 6.5 -- Static Parameters Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 100V, f = 1.0MHz VDD = 100V, ID = 9A, VGS = 10V VDD = 100V, ID = 9A, RG = 5Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 18 A Body Diode Voltage VSD TJ = 25ºC, ISD = 9A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr -- 1066 -- nC Reverse Recovery Time Trr IF = 9A, VGS = 0V di/dt=100A/us -- 239 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0606-V1.1) 18N20F Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0606-V1.1) 18N20F Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 12 3.5V 4.5V 3V 10 8 6 2.7V 4 VGS =2.2V 2 0 1 2 3 RDS(on),On-Resistance（mΩ） 8 25℃ 6 4 4 0 2 4 6 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 3. Drain Source On Resistance Figure 4. Gate Charge 150 140 130 120 VGS = 10V 110 100 90 10 0 0 VDS = 5V 12 2 Vgs Gate-Source Voltage（V） ID, Drain Current (A) 14 10V ID, Drain Current (A) 14 Figure 2. Transfer Characteristics 10 5 10 15 20 ID-Drain Current（A） VDD = 100V, ID = 9A 8 6 4 2 0 0 8 0 5 10 15 20 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Is, Reverse Drain Current (A) 2000 Capacitance(pF) 1800 1600 1400 1200 Ciss 1000 800 600 Coss 400 200 0 Crss 0 10 20 30 40 50 60 VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A0606-V1.1) 18N20F Typical Characteristics TJ = 25ºC, unless otherwise noted VGS = 10V, ID = 9A Figure 8. Safe Operation Area ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) TJ(MAX)=150℃ TC=25℃ VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance 0.45°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0606-V1.1) 18N20F TO-220F Package Information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0606-V1.1)