AS1M025120P

AS1M025120P N-Channel Silicon Carbide Power MOSFET Product Summary V(BR)DSS RDS(on)MAX ID@25℃ 1200V 34mΩ@20V 90A Feature Application  High Blocking Voltage With Low On-Resistance  Solar Inverters  High Speed Switching With Low Capacitance  Switch Mode Power Supplies  Easy to Parallel and Simple to Drive  High Voltage DC/DC Converters  Avalanche Ruggedness  Motor Drivers  Pulsed Power Applications Package Marking Circuit diagram AS1M025120P XXXXX G TO-247-3 D S Absolute maximum ratings (TC=25℃ unless otherwise noted) Parameter Symbol Test Condition Value Unit 1200 V Drain-Source Voltage VDSmax VGS = 0V, IDS =100µA Gate-Source Voltage VGSmax Absolute maximum values -10/+25 V Gate-Source Voltage VGSOP Recommended operational values -5/+20 V ID VGS = 20V,TC=25℃ 90 A ID VGS = 20V,TC=100℃ 60 A Pulsed Drain Current IDM Pule width tp limitea by Tjmax 250 A Power Dissipation PD TC=25℃,TJ=150℃ 463 W Junction-to-Case 0.28 ℃/W Continuous Drain Current Thermal Resistance RθJC Junction Temperature TJ -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Page 1 Document ID Issued Date Revised Date Revision Page. AS-3270001 2013/03/08 2021/06/18 B 6 AS1M025120P N-Channel Silicon Carbide Power MOSFET Electrical characteristics (TC=25 oC, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, IDS =100µA Zero gate voltage drain current IDSS VDS =1200V,VGS = 0V 100 µA Gate-Source leakage current IGSS VGS =20V, VDS = 0V 250 nA Gate threshold voltage VGS(th) Drain-source on-resistance RDS(on) Transconductance gfs VDS =VGS, IDS =15mA 1200 V 2.0 4.0 VDS =VGS, IDS =15mA ,TJ=150℃ 1.8 VGS =20V, ID =50A 25 VGS =20V, ID =50A,TJ=150℃ 43 VDS =20V, ID =50A 22.8 VDS =20V, ID =50A,TJ=150℃ 21.2 34 V mΩ S Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss COSS Stored Energy Eoss Turn-on Switching Energy Eon Turn-off Switching Energy Eoff Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on delay time td(on) Turn-on rise time Turn-off delay time tr td(off) Turn-off fall time 3600 240 VDS =1000V,VGS =0V,f =1MHz VAC=25mV 16 122 µJ 1.8 VDS=800V,VGS=-5V/20V, ID =30A,Rg=2.5Ω,L=200µH 1.5 195 VDS =800V,VGS =-5V/20V, ID =30A 54 nC 29 16 VDS=800V,VGS=-5V/20V, ID =30A,Rg=2.5Ω, RL=2.5Ω 16.2 nS 33 tf Internal Gate Resistance pF 7.8 RG f =1MHz open drain Diode Forward Current IS TC=25℃ Diode Forward voltage VDS 2.0 Ω Source-Drain Diode characteristics Reverse Recovery Time trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irrm 90 VGS =-5V, IF=25A 3.6 VGS =-5V, IF=25A,TJ=150℃ 3.3 VGS =-5V, ISD=25A,VR=800V Page 2 A V 55 nS 320 nC 10.7 A Document ID Issued Date Revised Date Revision Page. AS-3270001 2013/03/08 2021/06/18 B 6 AS1M025120P N-Channel Silicon Carbide Power MOSFET Typical Characteristics Page 3 Document ID Issued Date Revised Date Revision Page. AS-3270001 2013/03/08 2021/06/18 B 6 AS1M025120P N-Channel Silicon Carbide Power MOSFET Typical Characteristics Page 4 Document ID Issued Date Revised Date Revision Page. AS-3270001 2013/03/08 2021/06/18 B 6 AS1M025120P N-Channel Silicon Carbide Power MOSFET Typical Characteristics Page 5 Document ID Issued Date Revised Date Revision Page. AS-3270001 2013/03/08 2021/06/18 B 6 AS1M025120P N-Channel Silicon Carbide Power MOSFET TO-247-3 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 4.800 5.250 0.189 0.207 A1 2.250 2.550 0.089 0.100 b 1.050 1.350 0.041 0.053 b1 2.850 3.400 0.112 0.134 b2 1.900 2.420 0.075 0.095 c 0.550 0.700 0.022 0.028 c1 1.900 2.200 0.075 0.087 D 15.700 16.200 0.618 0.638 D1 13.000 14.200 0.512 0.559 E 16.250 17.650 0.640 0.695 E1 3.650 5.200 0.144 0.205 E2 3.650 5.200 0.144 0.205 L 19.800 20.350 0.780 0.801 L1 4.000 4.500 0.157 0.177 L2 20.800 21.200 0.819 0.835 Φ 7.180 BSC 0.283 BSC e 5.440 BSC 0.214 BSC H 6.000 6.300 Page 6 0.236 0.248 Document ID Issued Date Revised Date Revision Page. AS-3270001 2013/03/08 2021/06/18 B 6