GC20N65F

GC20N65F N-Channel Enhancement Mode Power MOSFET Description The GC20N65F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) 100% Avalanche Tested < 650V 20A 190mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-220F Ordering Information Device Package Marking Packaging GC20N65F TO-220F GC20N65 50psc/Tube Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 650 V ID 20 A IDM 80 A Gate-Source Voltage VGS ±30 V Power Dissipation PD 40 W EAS 484 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 65 ºC/W Maximum Junction-to-Case RthJC 3.1 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1098) GC20N65F Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 650 -- -- V IDSS VDS = 650V, VGS = 0V -- -- 1 μA IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2 3.5 4 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 10A -- 148 190 mΩ Forward Transconductance gFS VGS = 5V, ID = 10A -- 16 -- S -- 1603 -- -- 38 -- -- 3 -- -- 39 -- -- 9 -- -- 16 -- -- 77 -- -- 36 -- -- 120 -- -- 63 -- Static Parameters Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 100V, f = 1.0MHz VDD = 480V, ID = 10A, VGS = 10V VDD = 400V, ID = 10A, RG = 25Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 20 A Body Diode Voltage VSD TJ = 25ºC, ISD = 10A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr -- 7.5 -- nC Reverse Recovery Time Trr IF = 10A, VGS = 0V di/dt=100A/us -- 375 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1098) GC20N65F Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1098) GC20N65F Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 12 ID, Drain Current (A) 14 10V 6.5V 6V 10 ID, Drain Current (A) 14 Figure 2. Transfer Characteristics 5.5V 8 6 5V 4 2 0 1 2 3 Vgs Gate-Source Voltage（V） RDS(on),On-Resistance（mΩ） VGS= 10V 80 40 0 5 10 15 2 4 6 8 10 10 VDD =480V ID = 10A 8 6 4 2 0 20 ID-Drain Current（A） 0 10 20 30 40 50 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Is, Reverse Drain Current (A) 16000 14000 Capacitance(pF) 0 Figure 4. Gate Charge 120 12000 10000 8000 0 25℃ Figure 3. Drain Source On Resistance 160 Coss Ciss 2000 4 VGS, Gate-to-Source Voltage (V) 200 4000 6 VDS, Drain-to-Source Voltage (V) 240 6000 8 0 4 280 0 10 2 VGS= 4.5V 0 VDS= 5V 12 Crss 0 10 20 30 40 50 60 VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1098) GC20N65F Typical Characteristics TJ = 25ºC, unless otherwise noted VGS = 10V ID = 10A Figure 8. Safe Operation Area ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance 3.1°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1098) GC20N65F TO-220F Package Information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1098)