FTZ30P35G

FTZ30P35G 350V P-Channel MOSFET General Features ➢ ➢ ➢ ➢ ➢ ➢ ESD improved Capability Proprietary Advanced Planar Technology Rugged Polysilicon Gate Cell Structure Fast Switching Speed RoHS Compliant Halogen-free available RDS(ON) (Max.) ID -350V 30 Ω -200mA SOT-23 Applications ➢ ➢ ➢ BVDSX D Drain High Efficiency SMPS Adaptor/Charger Active PFC Source G Gate Ordering Information Part Number Package Marking Remark FTZ30P35G SOT-23 P35 Halogen Free Absolute Maximum Ratings Symbol S TA=25℃ unless otherwise specified Parameter Voltage[1] FTZ30P35G Unit -350 V V VDSX Drain-to-Source VDGX Drain-to-Gate Voltage[1] -350 Continuous Drain Current -0.2 ID Current[2] A IDM Pulsed Drain PD Power Dissipation 0.50 W VGS Gate-to-Source Voltage ±20 V Gate Source ESD IEC, C=150pF, R=330Ω 350 V Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 VESD(G-S) TL TJ and TSTG -0.6 Operating and Storage Temperature Range ℃ -55 to 150 Caution: Stresses greater than those listed in the“Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient ARK Microelectronics Co., Ltd. www.ark-micro.com 1 /5 FTZ30P35G Unit 250 K/W Rev. 2.1 Feb. 2016 FTZ30P35G Electrical Characteristics OFF Characteristics Symbol TA =25℃ unless otherwise specified Parameter BVDSX Drain-to-Source Breakdown Voltage △BVDSS/△TJ Breakdown Voltage Temperature Coefficient IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current Min. Typ. Max. Unit Test Conditions -350 -- -- V VGS=0V, ID=-250µA -- -0.35 -- V/℃ Reference to 25℃, ID=-250µA -- -- -1 µA VDS=-350V，VGS= 0V -- -- -100 uA VDS=-350V，VGS= 0V TJ=125℃ -- -- 20 -- -- -20 Min. Typ. Max. Unit Test Conditions -- 18 30 Ω VGS=-10V，ID=-200mA [3] -1 -- -3 V VGD =0V, ID=-250µA ON Characteristics Symbol RDS(ON) Static Drain-to-Source On-Resistance VGS(TH) Gate Threshold Voltage Dynamic Characteristics Parameter Min. Typ. Max. Input Capacitance -- 43.39 -- COSS Oput Capacitance -- 6.94 -- CRSS Reverse Transfer Capacitance -- 0.84 -- td(ON) Turn-on Delay Time -- 12 -- Rise Time -- 60 -- Turn-off Delay Time -- 136 -- Fall Time -- 320 -- td(OFF) tfall Source-Drain Diode Characteristics Symbol VSD VGS=-20V, VDS=0V Essentially independent of operating temperature CISS trise VGS=+20V, VDS=0V TA =25℃ unless otherwise specified Parameter Symbol uA Parameter Diode Forward Voltage Unit Test Conditions pF VGS=0V VDS=-25V f=1.0MHZ ns VGS = -10V~0V VDD = -25V, ID=-80mA RG = 25Ohm TA=25℃ unless otherwise specified Min Typ. Max. Units Test Conditions -- -- -1.8 V ISD =-200 mA, VGS =0 V NOTE： [1] TJ=+25℃ to +150℃ [2] Repetitive rating, pulse width limited by maximum junction temperature. [3] Pulse width≤380µs; duty cycle≤2%. ARK Microelectronics Co., Ltd. www.ark-micro.com 2 /5 Rev. 2.1 Feb. 2016 FTZ30P35G Figure 1. Maximum Power Dissipation vs. Case Temperature 0.6 0.00 -0.05 0.4 ID, Drain Current (A) PD, Power Dissipation (W) 0.5 Figure 2. Maximum Continuous Drain Current vs Case Temperature -0.10 0.3 -0.15 0.2 -0.20 0.1 0 -0.25 25 50 75 100 125 TC, Case Temperature (℃) 150 25 50 75 100 125 TC, Case Temperature (℃) 150 Figure 3. Typical Capacitance vs. Drain-toSource Voltage 100 C, Capacitance(pF) CISS 10 1 COSS CRSS 0 -400 -350 -300 -250 -200 -150 -100 -50 0 VDS, Drain Voltage(V) Switching Waveforms and Test Circuit RL VDS VGS VDS D.U.T RG 90% VDD 10% VGS td(ON) trise Figure 4. Resistive Switching Test Circuit ARK Microelectronics Co., Ltd. td(OFF) tfall Figure 5. Resistive Switching Waveforms www.ark-micro.com 3 /5 Rev. 2.1 Feb. 2016 FTZ30P35G Package Dimensions ARK Microelectronics Co., Ltd. www.ark-micro.com 4 /5 Rev. 2.1 Feb. 2016 FTZ30P35G Published by ARK Microelectronics Co., Ltd. No.9, East Zijing Road, High-tech District, Chengdu, P. R. China All Rights Reserved. Disclaimers ARK Microelectronics Co., Ltd. reserves the right to make change without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. All products are sold subject to ARK Microelectronics Co., Ltd’s terms and conditions supplied at the time of order acknowledgement. ARK Microelectronics Co., Ltd. warrants performance of its hardware products to the specifications at the time of sale, Testing, reliability and quality control are used to the extent ARK Microelectronics Co., Ltd deems necessary to support this warrantee. Except where agreed upon by contractual agreement, testing of all parameters of each product is not necessary performed. ARK Microelectronics Co., Ltd. does not assume any liability arising from the use of any product or circuit designs described herein. Customers are responsible for their products and applications using ARK Microelectronics Co., Ltd’s components. To minimize risk, customers must provide adequate design and operating safeguards. ARK Microelectronics Co., Ltd. does not warrant or convey any license either expressed or implied under its patent rights, nor the rights of others. Reproduction of information in ARK Microelectronics Co., Ltd’s data sheets or data books is permissible only if reproduction is without modification or alteration. Reproduction of this information with any alteration is an unfair and deceptive business practice. ARK Microelectronics Co., Ltd is not responsible or liable for such altered documentation. Resale of ARK Microelectronics Co., Ltd’s products with statements different from or beyond the parameters stated by ARK Microelectronics Co., Ltd. for the product or service voids all express or implied warrantees for the associated ARK Microelectronics Co., Ltd’s product or service and is unfair and deceptive business practice. ARK Microelectronics Co., Ltd is not responsible or liable for any such statements. Life Support Policy: ARK Microelectronics Co., Ltd’s products are not authorized for use as critical components in life devices or systems without the expressed written approval of ARK Microelectronics Co., Ltd. As used herein: 1. Life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to perform when properly used in accordance with instructionsfor used provided in the labeling, can be reasonably expected to result in significantinjury to the user. 2. A critical component is any component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ARK Microelectronics Co., Ltd. www.ark-micro.com 5 /5 Rev. 2.1 Feb. 2016