DMZ1315EL

DMZ1315EL/DMX1315EL UltraVt® Depletion-Mode Power MOSFET General Features ➢ ➢ ➢ ➢ ➢ ➢ ESD Improved Capability Depletion Mode (Normally On) Proprietary Advanced Planar Technology Proprietary Advanced Ultrahigh Vth Technology RoHS Compliant Halogen-free Available BVDSX VGS(off) IDSS,min 130V -13V to -20V 100mA SOT-89 SOT-23 D D Applications ➢ ➢ ➢ ➢ D S G G Quick Charger Current Source Voltage Source Type-C/PD charger D G S S General Description This novel depletion mode MOSFET, developed and manufactured by ARK proprietary UltraVt® technology. It has a high threshold voltage. By using the sub threshold characteristics, the depletion mode MOSFET can provide stably power to the load, and the voltage can be clamped to protect the load without Zener diode, and the circuit consumption is reduced. Ordering Information Part Number Package Marking Remark DMZ1315EL SOT-23 1315L Halogen Free DMX1315EL SOT-89 1315L Halogen Free Absolute Maximum Ratings Symbol TA=25℃ unless otherwise specified Parameter DMZ1315EL DMX1315EL VDSX Drain-to-Source Voltage[1] 130 ID Continuous Drain Current 0.1 IDM Pulsed Drain Current[2] 0.4 PD Power Dissipation VGS Gate-to-Source Voltage VESD TL TJ and TSTG Unit V A 0.5 W 1.0 ±30 V ESD[3] 700 V Source to Gate ESD[3] 700 V Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 Gate to Source Operating and Storage Temperature Range ℃ -55 to 150 Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient ARK Microelectronics Co., Ltd. DMZ1315EL DMX1315EL Unit 250 125 K/W www.ark-micro.com 1 /8 Rev. 1.0 Mar. 2022 DMZ1315EL/DMX1315EL Electrical Characteristics OFF Characteristics Symbol TA =25℃ unless otherwise specified Parameter BVDSX Drain-to-Source Breakdown Voltage ID(OFF) Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current Min. Typ. Max. Unit Test Conditions 130 -- -- V VGS=-30V, ID=1mA -- -- 10 µA VDS=130V，VGS= -30V -- -- 20 VGS=+30V, VDS=0V µA -- -- -20 VGS=-30V, VDS=0V ON Characteristics Symbol IDSS TA =25℃ unless otherwise specified Parameter Saturated Drain-to-Source Current RDS(ON) Static Drain-to-Source On-Resistance VGS(OFF) Gate-to-Source Cut-off Voltage Min. Typ. Max. Unit Test Conditions 100 -- -- mA VGS=0V, VDS=25V -- 15 30 Ω VGS=0V，ID=50mA[4] -13 -- -20 V VDS=9V, ID=8µA Min Typ. Max. Units Test Conditions -- -- 1.2 V ISD=100mA, VGS=-30V Source-Drain Diode Characteristics Symbol VSD Parameter Diode Forward Voltage TA=25℃ unless otherwise specified NOTE： [1] TJ=+25℃ to +150℃ [2] Repetitive rating, pulse width limited by maximum junction temperature. [3] The test is based on JEDEC EIA/JESD22-A114 (HBM). [4] Pulse width≤380µs; duty cycle≤2%. ARK Microelectronics Co., Ltd. www.ark-micro.com 2 /8 Rev. 1.0 Mar. 2022 DMZ1315EL/DMX1315EL Typical and highlight Characteristics DMZ1315EL/DMX1315EL is an UltraVt® depletion mode MOS device. A stable output voltage source or current source is implemented by using the sub-threshold characteristics of the device. Its basic application is shown as Figure 1: DMZ1315EL/DMX1315EL S Vout + Vin+ D G RL Vout - Vin- Figure1. Drain Current ID is decided by Load Resistance Figure 3. Clamp Voltage vs. Drain Current Figure 2. Clamp Voltage vs. Input Voltage 20 VCL，Clamp Voltage(V) VCL，Clamp Voltage(V) 20 16 12 8 TA=25℃ RL=5KΩ 4 0 0 20 40 60 80 Vin，Input Voltage(V) VCL，Clamp Voltage(V) 17 100 TA=25℃ Vin=40V 18 16 14 12 10 10 100 1000 ID，Drain Current(uA) Figure 4. Clamp Voltage vs. Junction Tempreature Vin=40V ID=5mA 16 15 14 13 12 11 10 -20 ARK Microelectronics Co., Ltd. 0 20 40 60 80 TJ，Junction Tempreature(℃) www.ark-micro.com 3 /8 100 Rev. 1.0 Mar. 2022 DMZ1315EL/DMX1315EL Typical Application In the QC2.0/3.0 and Type-C/PD charger circuits, using DMZ1315EL/DMX1315EL as a high voltage linear regulators can make the PWM IC power supply circuit more simplified, as shown below: In Figure 5, the transistor Q is used to provide power, and the zener diode Z is used to clamp voltage, the power supply circuit of IC is composed of several components. + DMZ6005E PD controller Synchronous rectifier IC Q VCC PWM IC Z Figure 5. Normal Circuit with Transistor and Diode In Figure 6, providing power and clamp voltage use only one device—DMZ1315EL/DMX1315EL, the circuit is simplified. + DMZ6005E PD controller DMZ1315EL /DMX1315EL Synchronous rectifier IC VCC PWM IC - Figure 6. Circuit with DMZ1315EL/DMX1315EL From the above function, we can see the depletion mode MOSFET operate in sub-threshold region, the Vout is always below or closed to the threshold voltage or Gate-to-Source Cut-off Voltage VGS(OFF), no matter how the input voltage Vin changes. Therefore, in addition to provide power for load like IC, the output voltage Vout can be clamped to the VGS(OFF), the IC is then protected from variable voltage or current. DMZ1315EL/DMX1315EL can support up to 130V input voltage. Vout and Vin have relations following the formulas: ARK Microelectronics Co., Ltd. www.ark-micro.com 4 /8 Rev. 1.0 Mar. 2022 DMZ1315EL/DMX1315EL If Vin＜∣VGS(OFF)∣, then Vout ≈ Vin If Vin ≥∣VGS(OFF)∣, then Vout ≤ VGS(OFF) The Ultrahigh Vth Depletion Mode Power MOSFET--DMZ1315EL/DMX1315EL, was developed by ARK Microelectronics proprietary and patent technology. The threshold voltage VGS(OFF) of DMZ1315EL/ DMX1315EL is between -13V and -20V, can provide sufficient voltage for load such like a PWM IC in the primary side of a Flyback converter. ARK Microelectronics Co., Ltd. www.ark-micro.com 5 /8 Rev. 1.0 Mar. 2022 DMZ1315EL/DMX1315EL Package Dimensions ARK Microelectronics Co., Ltd. www.ark-micro.com 6 /8 Rev. 1.0 Mar. 2022 DMZ1315EL/DMX1315EL ARK Microelectronics Co., Ltd. www.ark-micro.com 7 /8 Rev. 1.0 Mar. 2022 DMZ1315EL/DMX1315EL Published by ARK Microelectronics Co., Ltd. ADD: D26,UESTC National Science Park No. 1 Shuangxing Avenue, Chengdu, Sichuan. All Rights Reserved. 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A critical component is any component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ARK Microelectronics Co., Ltd. www.ark-micro.com 8 /8 Rev. 1.0 Mar. 2022