5N04

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFET 5N04 N-Channel MOSFET V(BR)DSS SOT-23 ID RDS(on)MAX 3 35 mΩ@10V  40V 5A  50 mΩ@4.5V 60 mΩ@2.5V 1. GATE 2. SOURCE 1 2 3. DRAIN FEATURE z TrenchFET Power MOSFET z Low RDS(ON) z Typical ESD Protection APPLICATION z Ideal for Load Swith and Battery MARKING Equivalent Circuit Protection Applications D 5N04 G S ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V ID 5 A Pulsed Drain Current IDM* 20 A Thermal Resistance from Junction to Ambient RθJA 417 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ TL 260 ℃ Continuous Drain Current Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) *Repetitive rating：Pluse width limited by junction temperature. 1 A,Apr,2017 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =40V,VGS = 0V Gate-body leakage current IGSS VGS =±20V, VDS = 0V VGS(th) VDS =VGS, ID =250µA Drain-source breakdown voltage Gate threshold voltage(note 1) Drain-source on-resistance (note 1) RDS(on) 40 V 1 1.0 µA ±100 nA 2.5V V VGS =20V, ID =5A 35 42 mΩ VGS =4.5V, ID =5A 48 72 mΩ VGS =2.5V, ID =5A 60 80 mΩ 15 Forward tranconductance (note 1) gFS VDS =5V, ID =4A Diode forward voltage (note 1) VSD IS=1A, VGS = 0V S 1 V DYNAMIC PARAMETERS (note2) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 245 pF 35 pF Crss 20 pF td(on) 2 ns VDS =15V,VGS =0V,f =1MHz SWITCHING PARAMETERS (note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr VDD=15V,VGS=10V 3.5 ns td(off) RL=3.75Ω,RGEN=3Ω 22 ns 3.5 ns tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Notes : 10 VDS =15V,VGS =10V,ID=4A nC 0.5 nC 1 nC 1. Pulse Test : Pulse width≤300μs, duty cycle≤0.5%. 2. Guaranteed by design, not subject to production testing. 2 A,Apr,2017 Typical Characteristics Output Characteristics 40 Ta=25℃ 18 Transfer Characteristics 14 VDS=3V VGS=2.5V,3V,4V,5V Pulsed Pulsed 12 16 (A) 10 Ta=100℃ Ta=25℃ ID (A) 12 DRAIN CURRENT ID DRAIN CURRENT VGS=2V 14 10 8 6 8 6 4 VGS=1.5V 4 2 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DRAIN TO SOURCE VOLTAGE VDS 4.0 4.5 0 0.0 5.0 0.5 (V) 1.0 1.5 2.0 GATE TO SOURCE VOLTAGE 2.5 VGS RDS(ON) —— VGS RDS(ON) —— ID 50 250 Pulsed Ta=25℃ Pulsed ID=5A 45 (m) RDS(ON) (m) ON-RESISTANCE RDS(ON) ON-RESISTANCE 200 VGS=2.5V 40 VGS=4.5V 35 VGS=10V 30 25 0.5 3.0 (V) 1.0 1.5 2.0 2.5 3.0 DRAIN CURRENT 3.5 ID 4.0 4.5 150 50 0 5.0 Ta=100℃ 100 Ta=25℃ 0 (A) 1 2 3 4 5 6 GATE TO SOURCE VOLTAGE 7 VGS 8 9 10 (V) Threshold Voltage IS —— VSD 6 1.4 Pulsed VTH 1 Ta=100℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1.2 Ta=25℃ 0.1 1.0 ID=250uA 0.8 0.6 0.4 0.2 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 SOURCE TO DRAIN VOLTAGE 1.4 1.6 0.0 25 1.8 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 Tj 125 (℃ ) A,Apr,2017 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout 4 A,Apr,2017