YGW40N65F1

YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES  High breakdown voltage up to 650V for improved reliability  Trench-Stop Technology offering : VCE 650 V IC 40 A VCE(SAT) IC=40A 1.80 V  High speed switching  High ruggedness, temperature stable  Low VCEsat  Easy parallel switching capability due to positive temperature coefficient in VCEsat  Enhanced avalanche capability APPLICATION  Uninterruptible Power Supplies  Inverter  Welding Converters  PFC applications  Converter with high switching frequency Product YGW40N65F1 http://www.lu-semi.com Package TO247 1 Packaging Tube 2022.06 / Rev4.3 YGW40N65F1 Maximum Ratings （Tj= 25℃ unless otherwise specified） Parameter Symbol Value Unit VCE 650 V IC 80 40 A IF 80 40 A Continuous Gate-emitter voltage VGE ±20 V Transient Gate-emitter voltage VGE ±30 V - 120 A Pulse collector current, VGE =15V, tp limited by Tjmax ICM 120 A Power dissipation , Tj=25°C Ptot 188 W Operating junction temperature Tj -40...+175 °C Storage temperature TS -55...+150 °C - 260 °C M 0.6 Nm Collector-Emitter Breakdown Voltage DC collector current, limited by Tjmax TC = 25°C TC = 100°C Diode Forward current, limited by Tjmax TC = 25°C TC = 100°C Turn off safe operating area VCE ≤650V, Tj ≤ 175°C, tp = 1μs Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s Mounting torque, M3 screw Maximum of mounting processes: 3 Thermal Resistance Parameter Symbol Max. Value Unit IGBT thermal resistance, junction - case Rθ(j-c) 0.8 K/W Diode thermal resistance, junction - case Rθ(j-c) 1.1 K/W Thermal resistance, junction - ambient Rθ(j-a) 40 K/W http://www.lu-semi.com 2 2022.06 / Rev4.3 YGW40N65F1 Electrical Characteristics （Tj= 25℃ unless otherwise specified） Parameter Symbol Conditions Min Typ Max Unit Static Collector-Emitter Breakdown Voltage BVCES VGE=0V , IC=250uA 650 - - V Gate Threshold Voltage VGE(th) VGE=VCE, IC=250uA 4.0 4.9 5.6 V Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC=40A Tj = 25°C Tj = 175°C - 1.80 2.60 2.40 - V Zero gate voltage collector current ICES VCE = 650V, VGE = 0V Tj = 25°C Tj = 175°C - 0.1 - 40 4000 μA Gate-emitter leakage current IGES VCE = 0V, VGE = ±20V - - 100 nA Transconductance gfs VCE = 20V, IC = 40A - 20 - S Min Typ Max Unit - 2100 - - 100 - - 40 - - 90 - Parameter Symbol Conditions Dynamic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG http://www.lu-semi.com VCE = 30V, VGE = 0V, f = 1MHz VCC = 520V, IC = 40A, VGE = 15V 3 pF nC 2022.06 / Rev4.3 YGW40N65F1 Switching Characteristic, Inductive Load Parameter Symbol Conditions Min Typ Max Unit td(on) - 45 - tr - 80 - - 120 - ns - 75 - ns Dynamic Tj=25C Turn-on Delay Time Rise Time Turn-off Delay Time td(off) Fall Time tf VCC = 400V, IC = 40.0A, VGE = 0.0/15.0V, Rg=20Ω ns ns Turn-on Energy Eon - 2.0 - mJ Turn-off Energy Eoff - 0.4 - mJ Unit Electrical Characteristics of the DIODE（Tj= 25℃ unless otherwise specified） Parameter Symbol Conditions Min Typ Max - 1.8 2.4 V - 75 - ns - 12 - A - 550 - nC Dynamic Diode Forward Voltage VFM Reverse Recovery Time Trr Reverse Recovery Current Irr Reverse Recovery Charge Qrr http://www.lu-semi.com IF = 40A IF= 40A, VR = 400V, di/dt= 300A/μs, 4 2022.06 / Rev4.3 YGW40N65F1 Fig. 1 FBSOA characteristics Fig. 2 Power dissipation as a function of TC 200 100 180 160 140 tP = 10μs 10 120 Ptot(W) 50μs IC(A) 100μs 500μs 100 80 1ms DC 1 60 40 20 Ta=25°C, Tj ≤175℃ , VGE=15V 0 0.1 1 10 100 25 1000 50 75 100 Fig. 3 Output characteristics 150 175 Fig. 4 Saturation voltage characteristics 80 100 70 90 25℃ 150℃ 80 175℃ VGE = 20V 17V 60 15V 70 13V 50 60 IC(A) 11V IC(A) 125 TC(℃) VCE(V) 9V 40 50 7V 40 30 30 20 20 10 VGE = 15V 10 0 0 0 1 2 3 4 5 0 VCE(V) http://www.lu-semi.com 1 2 3 4 VCE(V) 5 2022.06 / Rev4.3 5 YGW40N65F1 Fig. 5 Switching times vs. gate resistor Fig. 6 Switching times vs. collector current 1000 td(off) td(off) tf tf td(on) td(on) tr tr t, SWITCHING TIMES [ns] t, SWITCHING TIMES [ns] 1000 100 100 Common Emitter Common Emitter VCC = 400V, VGE = 15V, IC=40A VCC = 400V, VGE = 15V, RG=20Ω Ta=25℃ Ta=25℃ 10 10 0 10 20 30 40 50 60 0 10 20 30 Rg (Ω) 40 50 60 70 80 IC(A) Fig. 7 Switching loss vs. gate resistor Fig. 8 Switching loss vs. collector current 3 4.5 Eoff Eoff 4 Eon Eon 2.5 3.5 3 Switching loss (mJ) Switching loss (mJ) 2 1.5 1 2.5 2 1.5 1 0.5 Common Emitter 0.5 Common Emitter VCC = 400V, VGE = 15V, IC=40A VCC = 400V, VGE = 15V, Ta=25℃ 0 RG=20Ω, Ta=25℃ 0 0 5 10 15 20 25 30 35 40 45 50 55 60 0 Rg (Ω) http://www.lu-semi.com 10 20 30 40 50 60 70 80 Ic (A) 6 2022.06 / Rev4.3 YGW40N65F1 Fig. 9 Gate charge characteristics Fig. 10 Capacitance characteristics 10000 15 Ciss(pF) 360V Coss(pF) Crss(pF) 520V 12 1000 VGE (V) Capacitance 9 6 100 Common Emitter IC= 40A ,Ta=25℃ 3 Common Emitter VGE = 0V, f = 1MHz Ta=25℃ 0 10 0 50 100 0 Qg (nC) http://www.lu-semi.com 7 10 VCE(V) 20 2022.06 / Rev4.3 30 YGW40N65F1 TO247 package information http://www.lu-semi.com 8 2022.06 / Rev4.3