H1M065Q020

650V, 20mΩ, TO-247-4L SiC MOSFET H1M065Q020 Device Datasheet Product Summary H1M065Q020 VDS ID(@25°C) RDS(on) Silicon Carbide MOSFET N-CHANNEL ENHANCEMENT MODE Features ◼ ◼ ◼ ◼ ◼ ◼ Low On-Resistance and High Current Density Low Capacitance for High Frequency Operation Ultra-high Avalanche Ruggedness Positive Temperature Coefficient Device Low impedance Kelvin source pin-out RoHS Compliant and Halogen Free Circuit Diagram D (1) G (4) (4) (3) (2) (1) Benefits ◼ ◼ ◼ ◼ ◼ Higher System Efficiency Increase Parallel Device Convenience Capable of 175°C High Tj Application Allow High Frequency Operation Realize Compact and Lightweight Systems SS (3) S (2) Part Number Package Marking H1M065Q020 TO-247-4L H1M065Q020 Description The H1M065Q020 650V, 20mΩ silicon carbide power MOSFET is an N-channel enhancement mode device. Exploiting the outstanding wide bandgap material properties, this device shows high current density and great switching behavior. Thanks for the excellent thermal conductivity and many advantages of SiC, this device significantly improved in thermal capability and temperature independent switching behavior. Applications ◼ ◼ ◼ ◼ ◼ ◼ 650V 115A 20mΩ Switching Mode Power Supply DC/DC Converters, UPS, and PFC EV Charging Station Motor Drives Power Inverters Solar/Wind Renewable Energy Absolute Maximum Ratings (T = 25°C unless otherwise specified) c Parameter Symbol Test Conditions Value Unit Drain – Source Voltage VDS, max ID Pulse Drain Current Avalanche energy, Single Pulse Power Dissipation ID, pulse EAS PD 650 115 72 281 3.2 375 V Continuous Drain Current Recommend Gate Source Voltage VGS, op Maximum Gate Source Voltage VGS, max VGS=0V, IDS=100A VGS=20V, TC=25°C VGS=20V, TC=110°C tPW limitation per Fig.15 VDD=100V, ID=14A TC=25°C Static, recommended DC operating values Transient operating limit (AC f > 1Hz, duty cycle < 1%) Junction & Storage Temperature Soldering Temperature Mounting Torque Tj , Tstg TL MD A J W -5 to 20 V -10 to 25 -55 to 175 260 1.0 M3 or 6-32 screw °C Nm Thermal Resistance Parameter Symbol Thermal Resistance, Junction to Case Rθ,JC H1M065Q020 Rev. Preliminary 0.6 Oct. 2023 1 Min. Typ. 0.4 Max. Unit °C/W www.hestiapower.cn © Hestia Power 650V, 20mΩ, TO-247-4L SiC MOSFET H1M065Q020 Device Datasheet Electrical Characteristics (T = 25°C unless otherwise specified) c Parameter Symbol Test Conditions Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current IGSS VGS=0V, IDS=100A VDS=10V, IDS=50mA VDS=650V, VGS=0V VDS=650V, VGS=0V Tj=175°C VGS=20V, VDS=0V VGS=20V, IDS=50A VGS=20V, IDS=50A, Tj=175°C VDS=10V, IDS=60A Drain-Source On-State Resistance RDS(on) Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance, Energy Related Effective Output Capacitance, Time Related gfs Ciss Coss Crss Short-Circuit Withstand Time tSC Turn On Delay Time Rise Time Turn Off Delay Time Fall Time td(on) tr td(off) tf Coss Stored Energy Eoss Turn-on Switching Energy Eon Turn-off Switching Energy Internal Gate Resistance Eoff RG(int.) VGS=0V, VDS=400V f =1MHz, VAC=25mV Co(er) Co(tr) VGS=0V, VDS=0 to 400V ID=const., VGS=0V, VDS=0 to 400V VGS=0/15V, VDS=400V RG=100Ω VDS=400V, VGS=-4/+20V, ID=35A, RL=11.4Ω, RG(ext)= 2.7 Ω VGS=0V, VDS=400V f =1MHz, VAC=25mV VDS=400V, VGS=0/20V, ID=50A, RG(ext)= 2.7 Ω f =1MHz, VAC=25mV Min. 650 Typ. Max. 2.2