H3S065J040

650V/40A, SiC Schottky Barrier Diode H3S065J040 Datasheet Product Summary H3S065J040 Part Number Package Marking H3S065J040 TO-247-2L H3S065J040 VR 650V IF(110/136°C) 56A/40A QC 120nC Features ◼ ◼ ◼ ◼ ◼ ◼ ◼ ◼ Circuit Diagram Low Conduction and Switching Loss Zero Reverse Recovery Temperature Independent Switching Behavior Positive Temperature Coefficient Device High Surge Current Capability RoHS Compliant and Halogen Free Optimized for High Power Application AEC-Q101 Qualified PIN 2 PIN 1 Case 2 1 Benefits Applications ◼ ◼ ◼ ◼ ◼ ◼ ◼ ◼ ◼ ◼ ◼ ◼ Higher System Efficiency Increase Parallel Device Convenience Enable High Temperature Application Allow High Frequency Operation Realize Compact and Lightweight Systems High Reliability Switching Mode Power Supply PFC UPS Motor Drives Flywheel diode in Power Inverters Solar/Wind Renewable Energy Absolute Maximum Ratings (T = 25°C unless otherwise specified) c Parameter Symbol Test Conditions Value Unit Peak Repetitive Reverse Voltage Peak Reverse Surge Voltage DC Blocking Voltage VRRM VRSM VR IF Non-Repetitive Peak Forward Surge Current IFSM 650 650 650 92 56 40 292 >200* 1813 V V V Continuous Forward Current (Per Leg/Per Device) Repetitive Peak Forward Surge Current IFRM Power Dissipation PD I2t value Junction & Storage Temperature Soldering Temperature Mounting Torque ∫i2dt Tj , Tstg TL MD TJ = 25°C TJ = 25°C TJ = 25°C TC = 25°C TC = 110°C TC = 136°C TC = 25°C, TP = 10 ms, Half Sine Wave TC = 125°C, TP = 10 ms, Half Sine Wave TC = 25°C, TP = 10 μs, Pulse TC = 25°C, TP = 10 ms Half Sine Wave, D = 0.1 TC = 125°C, TP = 10 ms Half Sine Wave, D = 0.1 TC=25°C TC=125°C TC = 25°C, TP = 10 ms M3 or 6-32 screw A A 210 A 178 263 88 426 -55 to 175 260 1.0 W A2s °C Nm * Limited by equipment Rev. Preliminary 0.2 Dec. 2021 1 www.hestia-power.com 650V/40A, SiC Schottky Barrier Diode H3S065J040 Datasheet Electrical Characteristics (T = 25°C unless otherwise specified) c Parameter Symbol Test Conditions DC Blocking Voltage VDC Forward Voltage VF Reverse Current IR Total Capacitive Charge QC Total Capacitance Cj Capacitance Stored Energy EC IR = 500 μA, TJ = 25°C IF = 40A, TJ = 25°C IF = 40A, TJ = 175°C VR = 650V, TJ = 25°C VR = 650V, TJ = 175°C IF = 30A, dI/dt = 300A/μs, VR = 400V, TJ = 25°C VR = 0.1V, TJ=25°C, f = 1 MHz VR = 200V, TJ=25°C, f = 1 MHz VR = 400V, TJ=25°C, f = 1 MHz VR = 400V Min. > 650 Typ. 1.45 1.65 6 80 Max. 1.7 1.9 300 1000 120 Unit V V V μA μA nC 2497 233 191 24 pF μJ Thermal Resistance Parameter Symbol Thermal Resistance, Junction to Case Rθ,JC Naming Rule Min. Typ. 0.57 Max. Unit °C/W H3 S 065 J 040 Generation H3 = 3rd Gen Discrete Device Type S = JBS diode (High Power) D = JBS diode (High Speed) Breakdown Voltage 065 = 650V 120 = 1200V 170 = 1700V Package A = TO-220-2L F = TO-247-3L J = TO-247-2L Typical Current Rating 012 = 12A 016 = 16A 020 = 20A 030 = 30A 040 = 40A Recommended Solder Pad Layout TO-247-2L 10.88 Rev. Preliminary 0.2 Dec. 2021 2 www.hestia-power.com 650V/40A, SiC Schottky Barrier Diode H3S065J040 Datasheet Typical Device Performance 80 5.0E-04 Tj=25°C Tj=25°C Tj=75°C Tj=125°C Reverse Current, IR (A) Forward Current, IF (A) Tj=75°C 4.0E-04 Tj=125°C 60 Tj=175°C Tj=175°C 3.0E-04 40 2.0E-04 20 1.0E-04 0 0.0E+00 0 0.5 1 1.5 2 2.5 0 200 Forward Voltage, VF (V) Fig.1 Forward Characteristics Fig.2 Cj Stored Energy, EC (J) Capacitance, Cj (F) 1.E-08 1.E-09 Conditions: Tc=25°C VAC=25mV f: 1MHz 1.E-10 800 1000 Reverse Characteristics 4.0E-05 3.0E-05 2.0E-05 Conditions: Tc=25°C VAC=25mV f: 1MHz 1.0E-05 0.0E+00 0.1 1 10 100 1000 0 100 Reverse Voltage, VR (V) 200 300 400 500 600 Reverse Voltage, VR (V) Junction Capacitance vs. Reverse Voltage Fig.4 2.0E-07 Capacitance Stored Energy 1.E+04 Non-Repetitive Surge Current, IFSM (A) Cj Capacitive Charge, QC (C) 600 5.0E-05 1.E-07 Fig.3 400 Reverse Voltage, VR (V) 1.6E-07 25°C 125°C 1.E+03 1.2E-07 8.0E-08 1.E+02 Conditions: Tc=25°C VAC=25mV f: 1MHz 4.0E-08 1.E+01 1.00E-06 0.0E+00 0 100 200 300 400 500 600 Reverse Voltage, VR (V) Fig.5 Recovery Charge vs. Reverse Voltage Rev. Preliminary 0.2 Dec. 2021 Conditions: Tc=25°C 1.00E-05 1.00E-04 1.00E-03 Pulse Width, TP (sec) Fig.6 3 Non-Repetitive Peak Forward Surge Current (Pulse Mode) www.hestia-power.com 650V/40A, SiC Schottky Barrier Diode H3S065J040 Datasheet Typical Device Performance 300 300 DC Max Power Dissipation, PD (W) Peak Forward Current, IF (A) DC Duty=70% 250 Duty=50% Duty=30% 200 Duty=20% Duty=10% 150 100 50 0 250 200 150 100 50 0 0 25 50 75 100 125 150 175 0 Case Temperature, Tc (°C) Fig.7 25 50 75 100 125 150 175 Case Temperature, Tc (°C) Maximum Forward Current Derating vs. Case Temperature Fig.8 Maximum Power Dissipation Derating vs. Case Temperature Thermal Impedance, Zth(j-c) (K/W) 1.E+01 1.E+00 D=0.8 D=0.5 D=0.3 D=0.1 D=0.05 D=0.02 D=0.01 Single Pusle 1.E-01 1.E-02 1.E-03 1.E-04 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Pulse time, tPW (sec) Fig.9 Transient Junction to Case Thermal Impedance Rev. Preliminary 0.2 Dec. 2021 4 www.hestia-power.com 650V/40A, SiC Schottky Barrier Diode H3S065J040 Datasheet Package Dimensions (TO-247-2L) Symbol A A1 A2 b b1 b2 b3 c c1 D D1 D2 E E1 E2 e L L1 𝝓P 𝝓P1 Q S Min. 4.83 2.29 1.50 1.12 1.12 1.91 1.91 0.55 0.55 20.80 16.25 0.51 15.75 13.46 4.32 19.81 4.10 3.56 5.39 6.04 mm Typ. 5.02 2.41 2.00 1.20 1.20 2.00 2.00 0.60 0.60 20.95 16.55 1.19 15.94 14.02 4.91 5.44 BSC 20.07 4.19 3.61 7.19 REF. 5.79 6.17 Max. 5.21 2.55 2.49 1.33 1.28 2.39 2.34 0.69 0.65 21.10 17.65 1.35 16.13 14.16 5.49 20.32 4.40 3.65 Note 6 6 4 5 4 5 3 6 7 6.20 6.30 The information provided herein is subject to change without notice. Rev. Preliminary 0.2 Dec. 2021 5 www.hestia-power.com