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MWT-PH32F

MWT-PH32F

  • 厂商:

    MWT

  • 封装:

    模块

  • 描述:

    RF Mosfet 2 V 1 mA 12GHz 13dB 30.5dB 芯片

  • 数据手册
  • 价格&库存
MWT-PH32F 数据手册
MwT-PH32F 12 GHz High Power AlGaAs/InGaAs pHEMT Features: • • • • • • 30.5 dBm of Power at 12 GHz 13 dB Small Signal Gain at 12 GHz 43% PAE at 12 GHz 0.25 x 1600 Micron Refractory Metal/Gold Gate Excellent for High Power, Gain, and High Power Added Efficiency Ideal for Commercial, Military, Hi-Rel Space Applications Chip Dimensions: 530 x 375 microns Chip Thickness: 100 microns Description: The MwT-PH32F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 1600 micron gate width make it ideally suited for applications requiring high power and high power added efficiency up to 12.0 GHz frequency range. The device is equally effective for either wideband or narrow-band applications. The chip is produced using reliable metal systems and passivated to insure excellent reliability. Electrical Specifications: DC Specifications: Updated October 2021 at Ta= 25 ° C at Ta= 25 ° C MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com Data contained herein is subject to change without notice. All rights reserved © Please visit MwT website for information on MwT MMIC products. Page 1 of 4 MwT-PH32F 12 GHz High Power AlGaAs/InGaAs pHEMT Updated October 2021 MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com Data contained herein is subject to change without notice. All rights reserved © Please visit MwT website for information on MwT MMIC products. Page 2 of 4 MwT-PH32F 12 GHz High Power AlGaAs/InGaAs pHEMT Absolute Maximum Rating Notes: 1. Exceeding any one of these limits in continuous operation may reduce the mean-time- to-failure below the design goal. 2. Exceeding any one of these limits may cause permanent damage. Updated October 2021 MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com Data contained herein is subject to change without notice. All rights reserved © Please visit MwT website for information on MwT MMIC products. Page 3 of 4 MwT-PH32F 12 GHz High Power AlGaAs/InGaAs pHEMT S-Parameters ORDERING INFORMATION: When placing order or inquiring, please specify wafer number, if known. For details of Safe Handling Procedure please see supplementary information in available PDF on our website www.mwtinc.com. For package information, please see supplementary application note in PDF format by clicking located on our website. Available Packaging: 70 Package - MwT-PH32F70 71 Package - MwT-PH32F71 73 Package - MwT-PH32F73 Updated October 2021 MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com Data contained herein is subject to change without notice. All rights reserved © Please visit MwT website for information on MwT MMIC products. Page 4 of 4
MWT-PH32F 价格&库存

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