G52YT

Datasheet V2021.A.0 G52YT 650V/ 2A Silicon Carbide Power Schottky Barrier Diode Key Characteristics Features VRRM • Zero reverse recovery current • Zero forward recovery voltage • Temperature independent switching behavior • High temperature operation • High frequency operation 650 V IF, Tc≤151℃ 2 A QC 8 nC Benefits • Unipolar rectifier • Substantially reduced switching losses • No thermal run-away with parallel devices • Reduced heat sink requirements Applications • SMPS, e.g., CCM PFC; • Motor drives, Solar application, UPS, Wind turbine, Rail traction, EV/HEV G52YT Part No. Package Type Marking G52YT SMA G52YT ©2021 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G52YT 650V/ 2A Silicon Carbide Power Schottky Barrier Diode Maximum Ratings Parameter Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current Non-repetitive Peak Forward Surge Current Symbol Value Unit VRRM 650 V VRSM 650 V VDC 650 5.8 3.1 2 V IF IFRM IFSM Test Condition TC=25℃ TC=125℃ TC=151℃ TC=25℃, tp=10ms ， Half Sine Wave，D=0.3 TC=25℃, tp=10ms ， Half Sine Wave TC=25℃ TC=110℃ A 10 A 25 A 22 10 W W Power Dissipation PTOT Operating Junction Tj -55℃ to 175℃ ℃ Tstg -55℃ to 175℃ ℃ Storage Temperature Thermal Characteristics Parameter Symbol Thermal resistance from junction to case Rth JC G52YT Test Condition Value Typ. Unit 6.8 ℃/W ©2021 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G52YT 650V/ 2A Silicon Carbide Power Schottky Barrier Diode Electrical Characteristics Parameter Forward Voltage Reverse Current Symbol VF IR Test Conditions IF=2A, Tj=25℃ IF=2A, Tj=175℃ VR=650V, Tj=25℃ VR=650V, Tj=175℃ Numerical Typ. Max. 1.40 1.7 1.81 2 0.05 50 0.4 100 Unit V µA VR=400V, Tj=175℃ Total Capacitive Charge QC VR Qc   0 C (V )dV VR=0V, Tj=25℃, f=1MHZ Total Capacitance C VR=200V, Tj=25℃, f=1MHZ VR=400V, Tj=25℃, f=1MHZ 8 - 116.75 117.25 12.86 12.98 12.18 12.3 nC pF Performance Graphs 1) Forward IV characteristics as a function of Tj : G52YT 2) Reverse IV characteristics as a function of Tj : ©2021 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G52YT 650V/ 2A Silicon Carbide Power Schottky Barrier Diode 3) Current Derating: 4) Capacitance vs. reverse voltage: Package SMA G52YT ©2021 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G52YT 650V/ 2A Silicon Carbide Power Schottky Barrier Diode Note: The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC(RoHS2). RoHS Certification and other certifications can be obtained from GPT sales representatives or GPT website: http://globalpowertech.cn/English/index.asp GPT's Alibaba Online Store is available now! You can place order with one click and get direct delivery from manufacturer in short time. For more info about products and price, please reach us at: https://globalpowertech.en.alibaba.com/ More product datasheets and company information can be found in: http://globalpowertech.cn/English/index.asp G52YT ©2021 Global Power Technology Company Ltd - ALL RIGHTS RESERVED