BT137-600E

BT137 FSSeries 8.0A 4Quadrants TRIACs Product Summary Symbol Value Unit IT(RMS) 8.0 A VDRM VRRM 600 / 800 V VTM 1.55 V Feature Application With high ability to withstand the shock loading of large current,With high commutation performances, 4 quadrants products especially recommended for use on inductive load. Washing machine, vacuums, massager, solid state relay, AC Motor speed regulation and so on. Package Circuit diagram TO-220C Marking BT137 600E XXXX www.fuxinsemi.com Page 1 Ver2.1 BT137 FSSeries 8.0A 4Quadrants TRIACs Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Repetitive peak off-state voltage VDRM 600 / 800 V Repetitive peak reverse voltage VRRM 600 / 800 V RMS on-state current IT(RMS) 8 A ITSM 65 A I2t 21 A2s Non repetitive surge peak on-state current (full cycle, F=50Hz) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG =2×IGT) Peak gate current dIT/dt Ⅰ-Ⅱ-Ⅲ 50 Ⅳ 10 A/μs IGM 2 A PG(AV) 0.5 W Junction Temperature TJ -40 ~ +125 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Average gate power dissipation Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Gate trigger current IGT Gate trigger voltage VGT Gate non-trigger voltage VGD VD =VDRM Tj =125℃ latching current IL VD =12V IGT = 0.1A Holding current IH Critical-rate of rise of commutation voltage dVD/dt VD =12V IT = 0.1A Tj =25℃ Value Ⅰ-Ⅱ-Ⅲ Ⅳ Ⅰ-Ⅱ-Ⅲ-Ⅳ Tj =25℃ Ⅰ-Ⅲ-Ⅳ Ⅱ MAX. Unit 10 25 mA MAX. 1.3 V MIN. 0.2 V MAX. 25 35 mA MAX. 20 mA VD=2/3VDRM Gate Open Tj =125℃ MIN. 20 V/μs ITM =10A tp=380μs MAX. 1.55 V Tj=25℃ MAX. 5 μA Tj=125℃ MAX. 1 mA Ⅰ-Ⅱ-Ⅲ-Ⅳ STATIC CHARACTERISTICS Forward "on" voltage VTM Repetitive Peak Off-State Current IDRM Repetitive Peak Reverse Current IRRM VD =VDRM VR =VRRM THERMAL RESISTANCES Thermal resistance www.fuxinsemi.com Rth(j-c) Junction to case(AC) TYP. 1.6 ℃/W Rth(j-a) Junction to ambient TYP. 60 ℃/W Page 2 Ver2.1 BT137 FSSeries 8.0A 4Quadrants TRIACs Typical Characteristics FIG.2: RMS on-state current versus case temperature (full cycle) 12 I T(RMS) (A) P(W) FIG.1: Maximum power dissipation versus RMS on-state current (full cycle) 10 8 9 8 7 6 5 6 4 4 3 2 2 1 0 0 2 4 6 0 -50 8 I T(RMS) (A) 0 50 100 Tc 150 ) FIG.4: On-state characteristics (maximum values) FIG.3: Surge peak on-state current versus number of cycles I TMS (A) I TM (A) 70 60 25 Tj=125ºC 20 50 15 40 30 10 20 Tj=25ºC 5 10 0 0 10 100 0 1000 Number of cycles 0.5 1.0 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms 1.5 2.0 2.5 3.0 V TM (V) FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature (typical values) 3.0 I GT,I H,I L(T) / I GT,I H,I L(T=25 ) I TMS (A) 1000 2.5 2.0 100 1.5 IH IGT IL 1.0 0.5 10 0.01 www.fuxinsemi.com Tj(ºC) 0.1 1 10 tp(ms) 0.0 -40 -20 0 20 40 60 80 100 120 140 Tj Page 3 ) Ver2.1 BT137 FSSeries 8.0A 4Quadrants TRIACs Ordering Information BT 137 _ 600 E Triacs E:I GT1-3 ≤10mA I GT4 ≤25mA IT(RMS): 8A 600:VDRM /VRRM≥600V 800:VDRM /VRRM≥800V TO-220C Package Information Symbol A A1 b b1 c c1 D e www.fuxinsemi.com Page 4 Dimensions In Millimeters Min. Max. 9.700 10.300 2.150 2.550 0.710 0.910 1.170 1.370 0.350 0.650 1.200 1.400 25.100 27.100 2.540 TYP. Ver2.1