TS1102-200EG5T

TS1102 A 1µA, 200µVOS SOT23 Precision Current-Sense Amplifier FEATURES DESCRIPTION ♦ Improved Electrical Performance over the MAX9938 and the MAX9634 ♦ Ultra-Low Supply Current: 1μA ♦ Wide Input Common Mode Range: +2V to +25V ♦ Low Input Offset Voltage: 200μV (max) ♦ Low Gain Error: 0.5% (max) ♦ Voltage Output ♦ Four Gain Options Available: TS1102-25: Gain = 25V/V TS1102-50: Gain = 50V/V TS1102-100: Gain = 100V/V TS1102-200: Gain = 200V/V ♦ 5-Pin SOT23 Packaging The voltage-output TS1102 current-sense amplifiers are form-factor identical and electrical improvements to the MAX9938 and the MAX9634 current-sense amplifiers. The TS1102 is the latest addition to the TS1100 family of current-sense amplifiers. Consuming a very low 1μA supply current, the TS1102 high-side current-sense amplifiers combine a 200-µV (max) VOS and a 0.5% (max) gain error for cost-sensitive applications. For all high-side currentsensing applications, the TS1102 features a wide input common-mode voltage range from 2V to 25V. The SOT23 package makes the TS1102 an ideal choice for pcb-area-critical, low-current, highaccuracy current-sense applications in all batterypowered, remote or hand-held portable instruments. APPLICATIONS Notebook Computers Current-Shunt Measurement Power Management Systems Battery Monitoring Motor Control Load Protection Smart Battery Packs/Chargers All TS1102s are specified for operation over the -40°C to +105°C extended temperature range. TYPICAL APPLICATION CIRCUIT Input Offset Voltage Histogram 35 PERCENT OF UNITS - % 30 25 20 15 10 5 0 0 10 20 30 40 50 INPUT OFFSET VOLTAGE - µV The Touchstone Semiconductor logo is a registered trademark of Touchstone Semiconductor, Incorporated. PART TS1102-25 TS1102-50 TS1102-100 TS1102-200 GAIN OPTION 25 V/V 50 V/V 100 V/V 200 V/V Page 1 © 2011 Touchstone Semiconductor, Inc. All rights reserved. TS1102 ABSOLUTE MAXIMUM RATINGS RS+, RS- to GND ..............................................-0.3V to +27V OUT to GND........................................................-0.3V to +6V RS+ to RS- ..................................................................... ±27V Short-Circuit Duration: OUT to GND .................... Continuous Continuous Input Current (Any Pin) ............................ ±20mA Continuous Power Dissipation (TA = +70°C) 5-Pin SOT23 (Derate at 3.9mW/°C above +70°C) .. 312mW Operating Temperature Range .................... -40°C to +105°C Junction Temperature ................................................ +150°C Storage Temperature Range ....................... -65°C to +150°C Lead Temperature (Soldering, 10s) ........................... +300°C Soldering Temperature (Reflow) ............................ +260°C Electrical and thermal stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not implied. Exposure to any absolute maximum rating conditions for extended periods may affect device reliability and lifetime. PACKAGE/ORDERING INFORMATION ORDER NUMBER PART MARKING CARRIER QUANTITY TS1102-25EG5TP Tape & Reel ----- Tape & Reel 3000 Tape & Reel ----- Tape & Reel 3000 Tape & Reel ----- Tape & Reel 3000 Tape & Reel ----- Tape & Reel 3000 TADS TS1102-25EG5T TS1102-50EG5TP TADT TS1102-50EG5T TS1102-100EG5TP TADU TS1102-100EG5T TS1102-200EG5TP TADV TS1102-200EG5T Lead-free Program: Touchstone Semiconductor supplies only lead-free packaging. Consult Touchstone Semiconductor for products specified with wider operating temperature ranges. Page 2 TS1102DS r1p0 RTFDS TS1102 ELECTRICAL CHARACTERISTICS VRS+ = VRS- = 3.6V; VSENSE = (VRS+ - VRS-) = 0V; COUT = 47nF; TA = -40°C to +105°C, unless otherwise noted. Typical values are at TA = +25°C. See Note 1 PARAMETER Supply Current (Note 2) SYMBOL CONDITIONS TA = +25°C ICC VRS+ = 25V Common-Mode Input Range Common-Mode Rejection Ratio Input Offset Voltage (Note 3) Gain VCM CMRR VOS G Gain Error (Note 4) GE Output Resistance (Note 5) ROUT OUT Low Voltage VOL OUT High Voltage (Note 6) VOH Output Settling Time tS MIN TYP 0.68 TA = +25°C Guaranteed by CMRR 2 2V < VRS+ < 25V 120 150 TA = +25°C ±30 TS1102-25 TS1102-50 TS1102-100 TS1102-200 TA = +25°C 25 50 100 200 ±0.1 TS1102-25/50/100 TS1102-200 Gain = 25 Gain = 50 Gain = 100 Gain = 200 VOH = VRS- - VOUT TS1102-25/50/100 TS1102-200 1% final value, VOUT = 3V 7.0 14.0 MAX 0.85 1.0 1.0 1.2 25 10 20 0.05 2.2 4.3 UNITS μA V dB ±200 ±300 μV V/V ±0.5 ±0.6 13.2 26.4 5 10 20 40 0.2 % kΩ mV V ms ms Note 1: All devices are 100% production tested at TA = +25°C. All temperature limits are guaranteed by product characterization. Note 2: Extrapolated to VOUT = 0. ICC is the total current into the RS+ and the RS- pins. Note 3: Input offset voltage VOS is extrapolated from VOUT with VSENSE set to 1mV. Note 4: Gain error is calculated by applying two values for VSENSE and then calculating the error of the actual slope vs. the ideal transfer characteristic: For GAIN = 25, the applied VSENSE is 20mV and 120mV. For GAIN = 50, the applied VSENSE is 10mV and 60mV. For GAIN = 100, the applied VSENSE is 5mV and 30mV. For GAIN = 200, the applied VSENSE is 2.5mV and 15mV. Note 5: The device is stable for any capacitive load at VOUT. Note 6: VOH is the voltage from VRS- to VOUT with VSENSE = 3.6V/GAIN. TS1102DS r1p0 Page 3 RTFDS TS1102 TYPICAL PERFORMANCE CHARACTERISTICS VRS+ = VRS- = 3.6V; TA = +25°C, unless otherwise noted. Gain Error Histogram 30 30 25 PERCENT OF UNITS - % PERCENT OF UNITS - % Input Offset Voltage Histogram 35 25 20 15 10 5 0 20 15 10 5 0 10 0 30 20 -0.4 50 40 -0.2 40 INPUT OFFSET VOLTAGE - µV 1 SUPPLY CURENT - µA 0.4 Input Offset Voltage vs Common-Mode Voltage Supply Current vs Temperature 0.8 25V 2V 0.6 3.6V 0.4 0.2 35 30 25 20 0 -40 -15 10 35 60 85 110 0 5 10 15 20 25 30 TEMPERATURE - °C SUPPLY VOLTAGE - Volt Input Offset Voltage vs Temperature Supply Current vs Common-Mode Voltage 80 1 60 SUPPLY CURRENT - µA INPUT OFFSET VOLTAGE - µV 0.2 GAIN ERROR - % INPUT OFFSET VOLTAGE - µV 40 20 0 -20 -40 0.8 0.6 0.4 0.2 0 -40 -15 10 35 60 TEMPERATURE - °C Page 4 0 85 110 0 5 10 15 20 25 30 SUPPLY VOLTAGE - Volt TS1102DS r1p0 RTFDS TS1102 TYPICAL PERFORMANCE CHARACTERISTICS VRS+ = VRS- = 3.6V; TA = +25°C, unless otherwise noted. Gain Error vs. Temperature Gain Error vs Common-Mode Voltage 0.5 0.3 GAIN ERROR - % GAIN ERROR - % 0.4 0.2 0.1 0.3 0.2 0.1 0 0 0 5 10 15 25 20 -0.1 -40 30 -15 10 35 60 85 SUPPLY VOLTAGE - Volt TEMPERATURE - °C VOUT vs VSENSE @ Supply = 3.6V VOUT vs VSENSE @ Supply = 2V 110 2 4 G = 100 1.8 3.5 1.6 3 1.4 VOUT - V VOUT - V G = 50 2.5 G = 25 2 1.5 G = 100 1.2 G = 50 1.0 0.8 G = 25 0.6 1 0.4 0.5 0.2 0 0 50 0 0 150 100 60 40 80 100 VSENSE- mV VSENSE- mV Small-Signal Gain vs Frequency Common-Mode Rejection vs Frequency 0 0 G = 50 -5 -10 G = 100 G = 25 -15 -20 -25 -30 -35 0.001 0.01 0.1 1 10 FREQUENCY - kHz TS1102DS r1p0 100 1000 COMMON-MODE REJECTION - dB 5 SMALL-SIGNAL GAIN -dB 20 -20 G = 50, 100 -40 -60 G = 25 -80 -100 -120 -140 0.001 0.01 0.1 1 10 100 1000 FREQUENCY - kHz Page 5 RTFDS TS1102 TYPICAL PERFORMANCE CHARACTERISTICS VRS+ = VRS- = 3.6V; TA = +25°C, unless otherwise noted. Large-Signal Pulse Response, Gain = 50 Small-Signal Pulse Response, Gain = 50 VOUT VOUT VSENSE VSENSE Input Offset Voltage Histogram Small-Signal Pulse Response, Gain = 25 Large-Signal Pulse Response, Gain = 25 VOUT VOUT VSENSE 200µs/DIV VSENSE 200µs/DIV 200µs/DIV Small-Signal Pulse Response, Gain = 100 Large-Signal Pulse Response, Gain = 100 VOUT VOUT VSENSE VSENSE 200µs/DIV 200µs/DIV Page 6 200µs/DIV TS1102DS r1p0 RTFDS TS1102 PIN FUNCTIONS PIN SOT23 5 4 1, 2 3 LABEL FUNCTION RS+ RSGND OUT External Sense Resistor Power-Side Connection External Sense Resistor Load-Side Connection Ground. Connect these pins to analog ground. Output Voltage. VOUT is proportional to VSENSE = VRS+ - VRS- BLOCK DIAGRAM DESCRIPTION OF OPERATION The internal configuration of the TS1102 – a unidirectional high-side, current-sense amplifier - is based on a commonly-used operational amplifier (op amp) circuit for measuring load currents (in one direction) in the presence of high-common-mode voltages. In the general case, a current-sense amplifier monitors the voltage caused by a load current through an external sense resistor and generates an output voltage as a function of that load current. Referring to the typical application circuit on Page 1, the inputs of the op-amp-based circuit are connected across an external RSENSE resistor that is used to measure load current. At the non-inverting input of the TS1102 (the RS+ terminal), the applied voltage is ILOAD x RSENSE. Since the RS- terminal is the non-inverting input of the internal op amp, op-amp feedback action forces the inverting input of the TS1102DS r1p0 internal op amp to the same potential (ILOAD x RSENSE). Therefore, the voltage drop across RSENSE (VSENSE) and the voltage drop across RGAIN (at the RS+ terminal) are equal. To minimize any additional error because of op-amp input bias current mismatch, both RGAINs are the same value. Since the internal p-channel FET’s source is connected to the inverting input of the internal op amp and since the voltage drop across RGAIN is the same as the external VSENSE, op amp feedback action drives the gate of the FET such that the FET’s drainsource current is equal to: S VSE SE R A Page 7 RTFDS TS1102 or S L A x RSE R A Table 1: Internal Gain Setting Resistors (Typical Values) SE Since the FET’s drain terminal is connected to ROUT, the output voltage of the TS1102 at the OUT terminal is, therefore; V T L A x RSE SE x R T R A The current-sense amplifier’s gain accuracy is therefore the ratio match of ROUT to RGAIN. For each of the four gain options available, Table 1 lists the values for ROUT and RGAIN. The TS1102’s output stage is protected against input overdrive by use of an output current-limiting circuit of 3mA (typical) and a 7V internal clamp protection circuit. GAIN (V/V) 25 50 100 200 RGAIN (Ω) 400 200 100 100 ROUT (Ω) 10k 10k 10k 20k Part Number TS1102-25 TS1102-50 TS1102-100 TS1102-200 To achieve its very-low input offset voltage performance over temperature, VSENSE voltage, and power supply voltage, the design of the TS1102’s amplifier is chopper-stabilized, a commonly-used technique to reduce significantly the input offset voltage of amplifiers. This method, however, does employ the use of sampling techniques and therefore residue of the TS1102’s 10kHz internal clock is contained in the TS1102’s output voltage spectrum. APPLICATIONS INFORMATION Therefore, Choosing the Sense Resistor VOUT(max) = VRS+(min) - VSENSE(max) – VOH(max) Selecting the optimal value for the external RSENSE is based on the following criteria and for each commentary follows: 1) RSENSE Voltage Loss 2) VOUT Swing vs. Applied Input Voltage at VRS+ and Desired VSENSE 3) Total ILOAD Accuracy 4) Circuit Efficiency and Power Dissipation 5) RSENSE Kelvin Connections 6) Sense Resistor Composition 1) RSENSE Voltage Loss For lowest IR voltage loss in RSENSE, the smallest usable value for RSENSE should be selected. 2) VOUT Swing vs. Applied Input Voltage at VRS+ and Desired VSENSE As there is no separate power supply pin for the TS1102, the circuit draws its power from the applied voltage at both its RS+ and RS- terminals. Therefore, the signal voltage at the OUT terminal is bounded by the minimum supply voltage applied to the TS1102. Page 8 and RSE V SE A max L A max T where the full-scale VSENSE should be less than VOUT(MAX)/ A at the application’s minimum RS+ terminal voltage. For best performance with a 3.6V power supply, RSENSE should be chosen to generate a VSENSE of: a) 120mV (for the 25V/V GAIN option), b) 60mV (for the 50V/V GAIN option), c) 30mV (for the 100V/V GAIN option), or d) 15mV (for the 200V/V GAIN option) at the full-scale ILOAD(MAX) current in each application. For the case where the minimum power supply voltage is higher than 3.6V, each of the four full-scale VSENSEs above can be increased. 3) Total ILOAD Accuracy In the TS1102’s linear region where VOUT < VOUT(MAX), there are two specifications related to the circuit’s accuracy: a) the TS1102’s input offset voltage (VOS = 200μV, max) and b) its gain error (GE(max) = 0.5%). TS1102DS r1p0 RTFDS TS1102 An expression for the TS1102’s total output voltage (+ error) is given by: 6) RSENSE Composition A large value for RSENSE permits the use of smaller load currents to be measured more accurately because the effects of offset voltages are less significant when compared to larger VSENSE voltages. Due care though should be exercised as previously mentioned with large values of RSENSE. Current-shunt resistors are made available in metal film, metal strip, and wire-wound constructions. Wire-wound current-shunt resistors are constructed with wire spirally wound onto a core. As a result, these types of current shunt resistors exhibit the largest self inductance. In applications where the load current contains high-frequency transients, metal film or metal strip current sense resistors are recommended. 4) Circuit Efficiency and Power Dissipation Internal Noise Filter IR losses in RSENSE can be large especially at high load currents. It is important to select the smallest, usable RSENSE value to minimize power dissipation and to keep the physical size of RSENSE small. If the external RSENSE is allowed to dissipate significant power, then its inherent temperature coefficient may alter its design center value, thereby reducing load current measurement accuracy. Precisely because the TS1102’s input stage was designed to exhibit a very low input offset voltage, small RSENSE values can be used to reduce power dissipation and minimize local hot spots on the pcb. In power management and motor control applications, current-sense amplifiers are required to measure load currents accurately in the presence of both externally-generated differential and commonmode noise. An example of differential-mode noise that can appear at the inputs of a current-sense amplifier is high-frequency ripple. High-frequency ripple – whether injected into the circuit inductively or capacitively - can produce a differential-mode voltage drop across the external current-shunt resistor (RSENSE). An example of externallygenerated, common-mode noise is the highfrequency output ripple of a switching regulator that can result in common-mode noise injection into both inputs of a current-sense amplifier. VOUT = [GAIN x (1 ± GE) x VSENSE] ± (GAIN x VOS) 5) RSENSE Kelvin Connections For optimal VSENSE accuracy in the presence of large load currents, parasitic pcb track resistance should be minimized. Kelvin-sense pcb connections Figure 1: Making PCB Connections to the Sense Resistor. between RSENSE and the TS1102’s RS+ and RSterminals are strongly recommended. The drawing in Figure 1 illustrates the connections between the current-sense amplifier and the current-sense resistor. The pcb layout should be balanced and symmetrical to minimize wiring-induced errors. In addition, the pcb layout for RSENSE should include good thermal management techniques for optimal RSENSE power dissipation. TS1102DS r1p0 Even though the load current signal bandwidth is DC, the input stage of any current-sense amplifier can rectify unwanted, out-of-band noise that can result in an apparent error voltage at its output. This rectification of noise signals occurs because all amplifier input stages are constructed with transistors that can behave as high-frequency signal detectors in the same way pn-junction diodes were used as RF envelope detectors in early radio designs. Against common-mode injected noise, the amplifier’s internal common-mode rejection is usually sufficient. To counter the effects of externally-injected noise, it has always been good engineering practice to add external low-pass filters in series with the inputs of a current-sense amplifier. In the design of discrete current-sense amplifiers, resistors used in the external low-pass filters were incorporated into the circuit’s overall design so errors because of any input-bias current-generated offset voltage errors and gain errors were compensated. With the advent of monolithic current-sense amplifiers, like the TS1102, the addition of external Page 9 RTFDS TS1102 low-pass filters in series with the current-sense amplifier’s inputs only introduces additional offset voltage and gain errors. To minimize or eliminate altogether the need for external low-pass filters and to maintain low input offset voltage and gain errors, nd the TS1102 incorporates a 50-kHz (typ), 2 -order differential low-pass filter as shown in the TS1102’s Block Diagram. Optional Output Filter Capacitor If the TS1102 is part of a signal acquisition system where its OUT terminal is connected to the input of an ADC with an internal, switched-capacitor trackand-hold circuit, the internal track-and-hold’s sampling capacitor can cause voltage droop at VOUT. A 22nF to 100nF good-quality ceramic capacitor from the OUT terminal to GND forms a low-pass filters with the TS1102’s ROUT and should be used to minimize voltage droop (holding VOUT constant during the sample interval. Using a capacitor on the OUT terminal will also reduce the TS1102’s smallsignal bandwidth as well as band-limiting amplifier noise. the RS+ and the RS- input terminals of the TS1102 should be short and symmetric. Also recommended are a ground plane and surface mount resistors and capacitors. Using the TS1102 in Bidirectional Load Current Applications In many battery-powered systems, it is oftentimes necessary to monitor a battery’s discharge and charge currents. To perform this function, a bidirectional current-sense amplifier is required. The circuit illustrated in Figure 2 shows how two TS1102s can be configured as a bidirectional current-sense amplifier. As shown in the figure, the RS+/RS- input pair of TS1102 #2 is wired opposite in polarity with respect to the RS+/RS- connections of TS1102 #1. Current-sense amplifier #1 therefore measures the discharge current and current-sense amplifier #2 measures the charge current. Note that both output voltages are measured with respect to GND. When the discharge current is being measured, VOUT1 is active and VOUT2 is zero; for the case where charge current is being measured, V OUT1 is zero, and VOUT2 is active. PC Board Layout and Power-Supply Bypassing For optimal circuit performance, the TS1102 should be in very close proximity to the external currentsense resistor and the pcb tracks from RSENSE to Figure 2: Using Two TS1102s for Bidirectional Load Current Detection Page 10 TS1102DS r1p0 RTFDS TS1102 PACKAGE OUTLINE DRAWING 5-Pin SOT23 Package Outline Drawing (N.B., Drawings are not to scale) NOTES: 1. Dimensions and tolerances are as per ANSI Y14.5M, 1982. 2.80 - 3.00 2. Package surface to be matte finish VDI 11~13. 5 3. Die is facing up mold and facing down for trim/form, ie, reverse trim/form. 0.95 0.950 TYP TYP 5. Dimensions are exclusive of mold flash and gate burr. 2.60 - 3.00 5 1.50 - 1.75 4. The foot length measuring is based on the gauge plane method. 6. Dimensions are exclusive of solder plating. 7. All dimensions are in mm. 8. This part is compliant with EIAJ spec. and JEDEC MO-178 AA 0.30 - 0.50 9. Lead span/stand off height/coplanarity are considered as special characteristic. 1.90 Max 10º TYP 1.50 – 1.75 10º TYP 0.09 – 1.45 0.60 – 0.80 0.90 - 1.30 0º- 8º 0.25 0.00 - 0.15 10º TYP 10º TYP 0.10 Max 5 0.09 - 0.20 Gauge Plane 0.30 - 0.55 0.50 – 0.70 0.50 Max 0.30 Min 0.20 Max 0.09 Min Information furnished by Touchstone Semiconductor is believed to be accurate and reliable. However, Touchstone Semiconductor does not assume any responsibility for its use nor for any infringements of patents or other rights of third parties that may result from its use, and all information provided by Touchstone Semiconductor and its suppliers is provided on an AS IS basis, WITHOUT WARRANTY OF ANY KIND. Touchstone Semiconductor reserves the right to change product specifications and product descriptions at any time without any advance notice. No license is granted by implication or otherwise under any patent or patent rights of Touchstone Semiconductor. Touchstone Semiconductor assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using Touchstone Semiconductor components. To minimize the risk associated with customer products and applications, customers should provide adequate design and operating safeguards. Trademarks and registered trademarks are the property of their respective owners. Touchstone Semiconductor, Inc. 630 Alder Drive, Milpitas, CA 95035 +1 (408) 215 - 1220 ▪ www.touchstonesemi.com Page 11 TS1102DS r1p0 RTFDS