UMW
R
78MXX
Features
Output Current up to 1A
Output Voltages of 5,6,8,9,12,15,18,24V
Thermal Overload Protection Short Circuit Protection
Output Transistor Safe Operating area (SOA)Protection
1
1
SOT-223
TO-251
Description
The 78MXX three-terminal positive regulators are available
in the TO-252 package with several fixed output voltages
making it useful in a wide range of applications.
1
1
TO-252-3
TO-252
Internal Block Digram
Absolute Maximum Ratings
PARAMETER
Input Voltage
Output Current
Power Dissipation (TC=25°C)
SOT-223
TO-251/TO-252
TO-252-3
Operating Junction Temperature
Storage Temperature
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1
SYMBOL
VIN
IOUT
RATINGS
35
1
1
UNIT
V
A
PD
2
W
TJ
TSTG
-20 ~85
- 55 ~+150
℃
℃
友台半导体有限公司
UMW
R
78MXX
Thermal Data
PARAMETER
Junction to Case
SYMBOL
RATINGS
15
UNIT
θJC
12.5
°C/W
SOT-223
TO-251/TO-252
TO-252-3
Electrical Characteristics(78M05)
(Refer to the test circuits, 0 < TJ < +125°C, IO=350mA, VI=10V, unless otherwise specified,
CI = 0.33μF, CO=0.1μF)
Parameter
Output Voltage
Line Regulation(Note)
Load Regulation(Note)
Symbol
VO
△VO
△VO
Quiescent Current
IQ
Quiescent Current Change
△IQ
Output Voltage Drift
△V /△T
Output Noise Voltage
VN
Ripple Rejection
RR
Dropout Voltage
VD
Short Circuit Current
ISC
Peak Current
IPK
Value
Conditions
IO= 5mA~350mA
VI=7~20V
IO = 200mA
Tj=25°C
Unit
Min
Typ
Max
4.75
5
5.25
VI=7V~25V
100
VI=8V~25V
50
V
mV
IO= 5mA~500mA
100
IO= 5mA~200mA
50
mV
Tj=25°C
Tj=25°C
6.0
IO=5mA~350mA
0.5
mA
mA
IO = 200mA,VI=8~25V
0.8
IO = 5mA ,Tj = 0~125°C
-0.5
mV/°C
f=10HZ~100KHZ
40
μV
f = 120Hz, VI = 8 ~18V
80
dB
T j =25°C, IO = 500mA
2
V
, VI= 35V
800
mA
T j = 25°C
900
mA
T j =25
Notes:
Load and line regulation are specified at constant junction temperature. Change in Vo due to heating
effects must be taken into account separately. Pulse testing with low duty is used.
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2
友台半导体有限公司
UMW
R
78MXX
Electrical Characteristics(78M06)
(Refer to the test circuits, 0 < TJ < +125°C, IO=350mA, VI=11V, unless otherwise specified,
CI = 0.33μF, CO=0.1μF)
Parameter
Symbol
Output Voltage
VO
Line Regulation(Note)
△VO
Load Regulation(Note)
△VO
Value
Conditions
IO= 5mA~350mA
VI=8~21V
IO = 200mA
Tj=25°C
Typ
Max
5.7
6
6.3
VI=8V~25V
IQ
Quiescent Current Change
△IQ
Output Voltage Drift
△V /△T
Output Noise Voltage
VN
Ripple Rejection
RR
Dropout Voltage
VD
Short Circuit Current
ISC
Peak Current
IPK
V
100
mV
VI=9V~25V
50
120
IO= 5mA~500mA
mV
Tj=25°C
60
IO= 5mA~200mA
Quiescent Current
Unit
Min
Tj=25°C
6.0
IO=5mA~350mA
0.5
mA
mA
IO = 200mA,VI=9~25V
0.8
IO = 5mA ,Tj = 0~125°C
-0.5
mV/°C
f=10HZ~100KHZ
45
μV
f = 120Hz, VI = 9~19V
80
dB
2
V
, VI= 35V
800
mA
T j =25°C
900
mA
T j =25°C, IO = 500mA
T j =25
Notes:
Load and line regulation are specified at constant junction temperature. Change in Vo due to heating
effects must be taken into account separately. Pulse testing with low duty is used.
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3
友台半导体有限公司
UMW
R
78MXX
Electrical Characteristics(78M08)
(Refer to the test circuits, 0 < TJ < +125°C, IO=350mA, VI=14V, unless otherwise specified,
CI = 0.33μF, CO=0.1μF)
Parameter
Symbol
Output Voltage
VO
Line Regulation(Note)
△VO
Load Regulation(Note)
△VO
Value
Conditions
IO= 5mA~350mA
VI=10.5~23V
IO = 200mA
Tj=25°C
Typ
Max
7.6
8
8.4
VI=10.5V~25V
IQ
Quiescent Current Change
△IQ
Output Voltage Drift
△V /△T
Output Noise Voltage
VN
Ripple Rejection
V
100
mV
VI=11V~25V
50
160
IO= 5mA~500mA
mV
Tj=25°C
80
IO= 5mA~200mA
Quiescent Current
Unit
Min
Tj=25°C
6.0
IO=5mA~350mA
0.5
IO = 200mA,VI=10.5~25V
0.8
mA
mA
IO = 5mA ,Tj = 0~125°C
-0.8
mV/°C
f=10HZ~100KHZ
52
μV
RR
f = 120Hz, VI = 11.5~ 21.5V
80
dB
Dropout Voltage
VD
T j =25°C, IO = 500mA
2
V
Short Circuit Current
ISC
, VI= 35V
800
mA
Peak Current
IPK
T j =25°C
900
mA
T j =25
Notes:
Load and line regulation are specified at constant junction temperature. Change in Vo due to heating
effects must be taken into account separately. Pulse testing with low duty is used.
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4
友台半导体有限公司
UMW
R
78MXX
Electrical Characteristics(78M09)
(Refer to the test circuits, 0 < TJ < +125°C, IO=350mA, VI=15V, unless otherwise specified,
CI = 0.33μF, CO=0.1μF)
Parameter
Output Voltage
Line Regulation(Note)
Load Regulation(Note)
Symbol
VO
△VO
△VO
Value
Conditions
IO= 5mA~350mA
VI=11.5~24V
Typ
Max
8.45
9
9.55
VI=11.5V~25V
IO = 200mA
Tj=25°C
IQ
Quiescent Current Change
△IQ
Output Voltage Drift
△V /△T
Output Noise Voltage
VN
Ripple Rejection
V
100
mV
VI=12V~25V
50
180
IO= 5mA~500mA
mV
Tj=25°C
90
IO= 5mA~200mA
Quiescent Current
Unit
Min
Tj=25°C
6.0
IO=5mA~350mA
0.5
IO = 200mA,VI=11.5~25V
0.8
mA
mA
IO = 5mA ,Tj = 0~125°C
-0.8
mV/°C
f=10HZ~100KHZ
52
μV
RR
f = 120Hz, VI = 12.5~ 22.5V
80
dB
Dropout Voltage
VD
T j =25°C, IO = 500mA
2
V
Short Circuit Current
ISC
, VI= 35V
800
mA
Peak Current
IPK
T j =25°C
900
mA
T j =25
Notes:
Load and line regulation are specified at constant junction temperature. Change in Vo due to heating
effects must be taken into account separately. Pulse testing with low duty is used.
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5
友台半导体有限公司
UMW
R
78MXX
Electrical Characteristics(78M12)
(Refer to the test circuits, 0 < TJ < +125°C, IO=350mA, VI=19V, unless otherwise specified,
CI = 0.33μF, CO=0.1μF)
Parameter
Output Voltage
Line Regulation(Note)
Load Regulation(Note)
Symbol
VO
△VO
△VO
Value
Conditions
IO= 5mA~350mA
VI=14.5~27V
IO = 200mA
Tj=25°C
Typ
Max
11.4
12
12.6
VI=14.5V~30V
IQ
Quiescent Current Change
△IQ
Output Voltage Drift
△V /△T
Output Noise Voltage
VN
Ripple Rejection
RR
Dropout Voltage
VD
Short Circuit Current
ISC
Peak Current
IPK
V
100
mV
VI=16V~30V
50
240
IO= 5mA~500mA
mV
Tj=25°C
120
IO= 5mA~200mA
Quiescent Current
Unit
Min
Tj=25°C
6.0
IO=5mA~350mA
0.5
IO = 200mA,VI=14.5~30V
0.8
mA
mA
IO = 5mA ,Tj = 0~125°C
-0.8
mV/°C
f=10HZ~100KHZ
75
μV
f = 120Hz, VI = 15~ 25V
80
dB
2
V
, VI= 35V
800
mA
T j =25°C
900
mA
T j =25°C, IO = 500mA
T j =25
Notes:
Load and line regulation are specified at constant junction temperature. Change in Vo due to heating
effects must be taken into account separately. Pulse testing with low duty is used.
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友台半导体有限公司
UMW
R
78MXX
Electrical Characteristics(78M15)
(Refer to the test circuits, 0 < TJ < +125°C, IO=350mA, VI=23V, unless otherwise specified,
CI = 0.33μF, CO=0.1μF)
Parameter
Output Voltage
Line Regulation(Note)
Load Regulation(Note)
Symbol
VO
△VO
△VO
Quiescent Current
IQ
Quiescent Current Change
△IQ
Output Voltage Drift
△V /△T
Output Noise Voltage
Value
Conditions
IO= 5mA~350mA
VI=17.5~30V
IO = 200mA
Tj=25°C
Unit
Min
Typ
Max
14.25
15
15.75
VI=17.5V~30V
100
VI=20V~30V
50
V
mV
IO= 5mA~500mA
300
IO= 5mA~200mA
150
mV
Tj=25°C
Tj=25°C
6.0
IO=5mA~350mA
0.5
IO = 200mA,VI=17.5~30V
0.8
mA
mA
IO = 5mA ,Tj = 0~125°C
-1.0
mV/°C
VN
f=10HZ~100KHZ
100
μV
Ripple Rejection
RR
f = 120Hz, VI = 18.5~ 28.5V
70
dB
Dropout Voltage
VD
T j =25°C, IO = 500mA
2
V
Short Circuit Current
ISC
, VI= 35V
800
mA
Peak Current
IPK
T j =25°C
900
mA
T j =25
Notes:
Load and line regulation are specified at constant junction temperature. Change in Vo due to heating
effects must be taken into account separately. Pulse testing with low duty is used.
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友台半导体有限公司
UMW
R
78MXX
Electrical Characteristics(78M18)
(Refer to the test circuits, 0 < TJ < +125°C, IO=350mA, VI=26V, unless otherwise specified,
CI = 0.33μF, CO=0.1μF)
Parameter
Output Voltage
Line Regulation(Note)
Load Regulation(Note)
Symbol
VO
△VO
△VO
Value
Conditions
IO= 5mA~350mA
VI=20.5~33V
Typ
Max
17.1
18
18.9
VI=21V~33V
IO = 200mA
Tj=25°C
IQ
Quiescent Current Change
△IQ
Output Voltage Drift
△V /△T
Output Noise Voltage
VN
Ripple Rejection
RR
Dropout Voltage
VD
Short Circuit Current
ISC
Peak Current
IPK
V
100
mV
VI=24V~33V
50
360
IO= 5mA~500mA
mV
Tj=25°C
180
IO= 5mA~200mA
Quiescent Current
Unit
Min
Tj=25°C
6.0
IO=5mA~350mA
0.5
mA
mA
IO = 200mA,VI=21~33V
0.8
IO = 5mA ,Tj = 0~125°C
-1.2
mV/°C
f=10HZ~100KHZ
100
μV
f = 120Hz, VI = 22~ 32V
70
dB
2
V
, VI= 35V
800
0
mA
T j =25°C
900
mA
T j =25°C, IO = 500mA
T j =25
Notes:
Load and line regulation are specified at constant junction temperature. Change in Vo due to heating
effects must be taken into account separately. Pulse testing with low duty is used.
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8
友台半导体有限公司
UMW
R
78MXX
Electrical Characteristics(78M24)
(Refer to the test circuits, 0 < TJ < +125°C, IO=350mA, VI=33V, unless otherwise specified,
CI = 0.33μF, CO=0.1μF)
Parameter
Output Voltage
Line Regulation(Note)
Load Regulation(Note)
Symbol
VO
△VO
△VO
Value
Conditions
IO= 5mA~350mA
VI=27~38V
IO = 200mA
Tj=25°C
Typ
Max
22.8
24
25.2
VI=27V~38V
IQ
Quiescent Current Change
△IQ
Output Voltage Drift
△V /△T
Output Noise Voltage
VN
Ripple Rejection
RR
Dropout Voltage
VD
Short Circuit Current
ISC
Peak Current
IPK
V
100
mV
VI=28V~38V
50
480
IO= 5mA~500mA
mV
Tj=25°C
240
IO= 5mA~200mA
Quiescent Current
Unit
Min
Tj=25°C
6.0
IO=5mA~350mA
0.5
mA
mA
IO = 200mA,VI=27~38V
0.8
IO = 5mA ,Tj = 0~125°C
-1.2
mV/°C
f=10HZ~100KHZ
170
μV
f = 120Hz, VI = 28~ 38V
70
dB
2
V
, VI= 35V
800
0
mA
T j =25°C
900
mA
T j =25°C, IO = 500mA
T j =25
Notes:
Load and line regulation are specified at constant junction temperature. Change in Vo due to heating
effects must be taken into account separately. Pulse testing with low duty is used.
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友台半导体有限公司
UMW
R
78MXX
SOT-223 Package Information
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10
友台半导体有限公司
UMW
R
78MXX
TO-252 Package Information
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11
友台半导体有限公司