AO4405

UMW R AO4405 P-Channel MOSFET General Description The AO4405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V ID = -6 A RDS(ON) < 45mΩ @ VGS=10V A p p lic a tio n Battery protection Load switch Uninterruptible power supply Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current TA=70°C Pulsed Drain Current Avalanche Current C Avalanche energy L=0.1mH C VDS Spike 10µs TA=25°C Power Dissipation B TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead www.umw-ic.com Steady-State Steady-State V A IDM -30 IAS, IAR 17 A EAS, EAR 14 mJ VSPIKE -36 V 3.1 W 2 -55 to 150 TJ, TSTG Symbol t ≤ 10s ±20 -5.1 PD Junction and Storage Temperature Range Units V -6 ID C Maximum -30 Typ 31 59 16 RθJA RθJL 1 °C Max 40 75 24 Units °C/W °C/W °C/W UTD Semiconductor Co.,Limited UMW R AO4405 P-Channel MOSFET Electrical Characteristics (TC unless otherwise noted) J=25° Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID=-250µA, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 RDS(ON) Static Drain-Source On-Resistance Min -30 Typ VDS=-30V, VGS=0V TJ=55°C -1.5 53 75 mΩ -0.8 IS Ciss Coss Maximum Body-Diode Continuous Current Input Capacitance VGS=0V, VDS=-15V, f=1MHz Output Capacitance Crss Reverse Transfer Capacitance Rg Qg(10V) Gate resistance Total Gate Charge tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr V VGS=-4.5V, ID=-5A IS=-1A,VGS=0V Turn-On DelayTime -2.5 mΩ Diode Forward Voltage tD(on) nA 45 VSD Gate Drain Charge ±100 33 14 Qgd µA VGS=-10V, ID=-6A VDS=-5V, ID=-6A Gate Source Charge -1 A Forward Transconductance Qgs Units V -5 gFS Qg(4.5V) Total Gate Charge Max VGS=0V, VDS=0V, f=1MHz 3.5 VGS=-10V, VDS=-15V, ID=-6A S -1 V -3.5 520 A pF 100 pF 65 pF 7.5 9.2 11.5 11 Ω nC 4.6 6 nC 1.6 nC 2.2 ns nC 7.5 ns 5.5 ns 19 ns 7 ns IF=-6A, dI/dt=100A/µs 11 Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs 5.3 ns nC Ω, =2.5 VGS=-10V, VDS=-15V, RL=2.5Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using