APM4953

UMW R UMW APM4953 -30V P-Channel MOSFET Features D1 VDS (V) = -30V D2 ID = -5.3A (VGS = 10V) RDS(ON) ＜ 41mΩ (VGS = -10V) RDS(ON) ＜ 75mΩ (VGS = -4.5V) G1 G2 S1 S2 G2 S1 G1 S2 1 2 3 4 8 7 6 5 D2 D2 D1 D1 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V -5.3 A ID IDM Drain Current (Continuous) -20 A PD o Total Power Dissipation @TA=25 C 2.0 W IS Maximum Diode Forward Current -1.9 A -55 to +150 °C 50 °C/W Tj, Tstg RθJA Drain Current (Pulsed) a Operating Junction and Storage Temperature Range b Thermal Resistance Junction to Ambient (PCB mounted) a: Repetitive Rating: Pulse width limited by the maximum junction temperation. b: 1-in2 2oz Cu PCB board www.umw-ic.com 1 UTD Semiconductor Co.,Limited UMW R UMW APM4953 -30V P-Channel MOSFET Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V IDSS Zero Gate Voltage Drain Current VDS=-24V, VGS=0V - - -1 uA IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V - - ±100 nA VDS=VGS, ID=-250uA -1 -1.5 -2.5 VGS=-10V, ID=-5.3A - 38 41 VGS=-4.5V, ID=-3.9A - 59 75 VDS=-10V, ID=-5.3A - 11 - - 504 - - 68 - - 56 - - 12 - - 2.3 - b ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-State Resistance gFS Forward Transconductance V mΩ S C DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS VDS=-15V, VGS=0V, f=1MHz C Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge - 1.4 - td(on) Turn-on Delay Time - 8.1 - tr Turn-on Rise Time VDD=-15V, RL=5Ω, ID=-3A, - 3.3 - td(off) Turn-off Delay Time VGEN=-10V, RG=6Ω - 29.3 - - 5.6 - - - -1.3 tf PF VDS=-15V, ID=-3.6A, VGS=-10V Turn-off Fall Time nC nS Drain-Source Diode Characteristics VSD Drain-Source Diode Forward Voltage VGS=0V, IS=-1.9A V Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% www.umw-ic.com 2 UTD Semiconductor Co.,Limited UMW R UMW APM4953 -30V P-Channel MOSFET Characteristics Curve www.umw-ic.com 3 UTD Semiconductor Co.,Limited UMW R UMW APM4953 -30V P-Channel MOSFET Characteristics Curve www.umw-ic.com 4 UTD Semiconductor Co.,Limited UMW R UMW APM4953 -30V P-Channel MOSFET PACKAGE OUTLINE DIMENSIONS SOP-8 Symbol A A1 A2 b c D E E1 e L θ www.umw-ic.com Dimensions In Millimeters Min Max 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.700 5.100 3.800 4.000 5.800 6.200 1.270(BSC) 0.400 1.270 0° 8° 5 Dimensions In Inches Min Max 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.006 0.010 0.185 0.200 0.150 0.157 0.228 0.244 0.050(BSC) 0.016 0.050 0° 8° UTD Semiconductor Co.,Limited UMW R UMW APM4953 -30V P-Channel MOSFET Marking Ordering information Order code Package Baseqty Deliverymode UMW APM4953 SOP-8 3000 Tape and reel www.umw-ic.com 6 UTD Semiconductor Co.,Limited