TC1N4148T26B

® SEM I CON D U CTO R 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Parameter Symbol PD TSTG TA = 25°C unless otherwise noted Power Dissipation Storage Temperature Range TJ Operating Junction Temperature WIV Value Units 500 mW -65 to +150 °C +150 °C Working Inverse Voltage 75 V IO Average Rectified Current 150 mA IFM Non-repetitive Peak Forward Current Peak Forward Surge Current (Pulse Width = 1.0 µsecond) 450 mA 2 A IFSURGE DEVICE MARKING DIAGRAM L xx xx L TC1Nxxxx : Logo : Device Code These ratings are limiting values above which the serviceability of the diode may be impaired. Specification Features: § § § § § § § § § Fast Switching Device (TRR