H75XX-H#
100mA Low Power LDO
Features
Quiescent Current: 4.2uA@12V
High input voltage (up to 40V)
PSRR:60dB@100Hz
Output voltage accuracy: tolerance ±2%
Voltage drop:600mV@100mA
Output current:100mA(Typ.)
ESD HBM:8KV
TO92,SOT89 and SOT23-3 package
Audio/Video equipment
Applications
Battery-powered equipment
Communication equipment
General Description
technology ensures low voltage drop and low
low power high voltage regulators implemented in
quiescent current. Although designed primarily as
CMOS technology. They allow input voltages as
fixed voltage regulators, these devices can be
high as 40V. They are available with several fixed
used with external components to obtain variable
output voltages ranging from 1.8V to 5.0V. CMOS
voltages and currents.
Selection Table
Package
Marking
PR
O
Output Voltage
2.5V
2.7V
2.8V
3.0V
3.3V
3.6V
4.0V
4.4V
5.0V
TO92
SOT89
SOT23-3
75XX-H#(for TO92)
75XX-H#(for SOT89)
XXH(for SOT23-3)
SI
Part No.
H7525-H#
H7527-H#
H7528-H#
H7530-H#
H7533-H#
H7536-H#
H7540-H#
H7544-H#
H7550-H#
IN
The H75XX-H# series is a set of three-terminal
Note: ”XX” stands for output voltages. Other voltages can be specially customized.
TO92 & SOT89 packages will add a “#” mark at the end of the marking.
Order Information
H75①②③④⑤
Designator
① ②
③
④
⑤
Ver2.1
Symbol
Description
Integer
-H#
Output Voltage(1.8~5.0V)
Standard
T
P
M
R
Package:TO-92
Package:SOT89
Package:SOT23-3
RoHS / Pb Free
G
Halogen Free
1
Shanghai Siproin Microelectronics Co.
H75XX-H#
100mA Low Power LDO
Block Diagram
SI
PR
O
IN
Pin Assignment
Absolute Maximum Ratings
Supply Voltage ................................-0.3V to 45V
Storage Temperature ..................-50℃ to 125℃
Operating Temperature .................-40℃ to 85℃
Note: These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum
Ratings” may cause substantial damage to the device. Functional operation of this device at other
conditions beyond those listed in the specification is not implied and prolonged exposure to extreme
conditions may affect device reliability.
Thermal Information
Symbol
Parameter
θJA
Thermal Resistance (Junction to
Ambient) (Assume no ambient
airflow, no heat sink)
Power Dissipation
PD
Package
Max.
TO92
200
Unit
℃/W
SOT89
200
℃/W
SOT23
500
℃/W
TO92
SOT89
SOT23
0.50
0.50
0.20
W
W
W
Note: PD is measured at Ta= 25℃
Ver2.1
2
Shanghai Siproin Microelectronics Co.
H75XX-H#
100mA Low Power LDO
Electrical Characteristics
The following specifications apply for VIN = 12V, TA=25℃,CIN=COUT=10μF, unless specified otherwise.
SYMBOL ITEMS
CONDITIONS
MIN
TYP
MAX
UNIT
40
V
V
VIN
Input Range
IOUT = 10mA
4.75
VOUT
Output Range
IOUT = 10mA
VOUTx0.98
VOUT
VOUTx1.02
4.9
5
5.1
3.234
3.3
3.366
2.94
3.0
3.06
VIN = 7V, IOUT = 0
4
6
VIN = 24V, IOUT = 0
4.6
6.7
VIN = 40V, IOUT = 0
5.4
8.2
IQ
Output Voltage
VIN = 12V, IOUT = 10mA
Quiescent Current
IOUT_PK
Maximum Output Current VIN = 12V, RL=1Ω
VDROP
Dropout Voltage
△VLINE
Line Regulation
ISHORT
Short Current
eNO
TSD
ΔVO/ΔT
IOUT = 100mA
60
VIN =7 ~ 24V, VOUT = 5V, IOUT = 1mA
0.02
0.03
VIN = 7 ~ 45V, VOUT = 5V, IOUT = 1mA
0.08
0.1
19
37
VOUT Short to GND with 1Ω
(1ms pulse), VIN = 40V
180
VIN = 10V,
F = 100Hz
60
Power Supply Rejection
VPP = 0.5V,
F = 1kHz
50
Rate
IOUT = 1mA
F = 10kHz
40
Output Noise Voltage
10Hz to 100kHz, COUT = 10 μF,
IOUT=10mA
Thermal Shutdown
±100
165
Protection
Temperature Coefficient
90
900
VIN = 7V , IOUT = 1 ~ 100mA
VIN = 12V, IOUT = 1mA
±0.5
Application Circuits
Basic Circuits
Ver2.1
3
V
µA
m
600
SI
PSRR
IOUT = 10mA
PR
O
△VLOAD Load Regulation
190
IN
△VOUT
Shanghai Siproin Microelectronics Co.
mV
%/V
m
mA
dB
μVRMS
℃
mV/℃
H75XX-H#
100mA Low Power LDO
High Output Current Positive Voltage Regulator
SI
PR
O
IN
Short-Circuit Protection by Tr1
Circuit for Increasing Output Voltage
Ver2.1
4
Shanghai Siproin Microelectronics Co.
H75XX-H#
100mA Low Power LDO
Circuit for Increasing Output Voltage
SI
Dual Supply
PR
O
IN
Constant Current Regulator
Ver2.1
5
Shanghai Siproin Microelectronics Co.
H75XX-H#
100mA Low Power LDO
SI
PR
O
IN
Typical Performance Characteristics
Ver2.1
6
Shanghai Siproin Microelectronics Co.
SI
PR
O
IN
H75XX-H#
100mA Low Power LDO
Ver2.1
7
Shanghai Siproin Microelectronics Co.
SI
PR
O
IN
H75XX-H#
100mA Low Power LDO
Ver2.1
8
Shanghai Siproin Microelectronics Co.
H75XX-H#
100mA Low Power LDO
Package Information
SI
PR
O
IN
3-pin TO92 Outline Dimensions
Ver2.1
9
Shanghai Siproin Microelectronics Co.
H75XX-H#
100mA Low Power LDO
SI
PR
O
IN
3-pin SOT89 Outline Dimensions
Ver2.1
10
Shanghai Siproin Microelectronics Co.
H75XX-H#
100mA Low Power LDO
SI
PR
O
IN
3-pin SOT23-3 Outline Dimensions
Ver2.1
11
Shanghai Siproin Microelectronics Co.
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