KY1012

ShenZhen HanKingYuan Electronic Co.,Ltd KY1012 20V N-Channel Mosfet SOT-523 FEATURES ● RDS(ON) ≤ 0.7Ω( 0.41Ω Typ.) @VGS=4.5V ● RDS(ON) ≤ 0.85Ω( 0.53Ω Typ.) @VGS=2.5V 1. GATE ● RDS(ON) ≤ 1.25Ω( 0.7Ω Typ.) @VGS=1.8V 3. DRAIN 2. SOURCE APPLICATIONS ● Drivers: Relays, Solenoids, Lamps, Hammers, displays, Memories N-CHANNEL MOSFET ● Battery Operated Systems ● Power Supply Converter Circuits ● Load/Power Switching Cell Phones, agers MARKING D A S G MAXIMUM RATINGS (Ta=25°C unless otherwise noted) Symbol Parameter 5 secs Steady State Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±6V V ID Continuous Drain Current IDM Pulsed Drain Current Continuous Source Current PD Power Dissipation TJ ESD Ta=25℃ Ta=85℃ Operating Junction Temperature Gate-source ESD Rating www.scr-ky.com 500 350 1000 Storage Temperature Range (HBM, Method 3015) 600 400 note1 IS TSTG Ta=25℃ Ta=85℃ mA mA 275 250 mA 175 90 150 80 mW -55 to +150 °C +150 °C 2000 V 1／3 ShenZhen HanKingYuan Electronic Co.,Ltd KY1012 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 °C unless otherwise specified Parameter Symbol bol Test Condition Min. Typ. Max. Units Off Characteristic IDSS Zero Gate Voltage Drain Current VDS = 20V, VGS = 0V, TJ = 25℃ - 0.3 100 nA IGSS Gate to Body Leakage Current VGS=±4.5V,VDS=0V - ±0.5 ±1 μA 700 - - mA 0.45 VDS =VGS,ID = 100μA VGS=4.5V, ID =600mA - 0.41 0.9 0.70 V VGS=2.5V, ID=500mA - 0.53 0.85 Ω VGS=1.8V, ID=350mA - 0.70 1.25 VDS=10V, ID=400mA 1 - - mS - 750 - nC - 75 - nC - 225 - nC - 5 - ns - 5 - ns - 25 - ns - 11 - ns - 0.8 1.2 V ID(ON) On-state Drain Current VGS 4.5V VDS=5V,= On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forwar d Transconductance Dynamic Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS=10V, ID=250mA VGS=4.5V Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VGS=4.5V, VDS=10V, RG =10Ω, ID=200mA RL=47Ω Drain-Source Diode Characteristics and Maximum Ratings VSD Drain to Source Diode Forward Voltage www.scr-ky.com VGS = 0V, TJ = 25℃ ISD=150mA 2／3 ShenZhen HanKingYuan Electronic Co.,Ltd KY1012 SOT-523 PACKAGE OUTLINE DRAWING DIM MILLIMETERS INCHES MIN MAX MIN MAX A 0.70 0.90 0.028 0.035 A1 0.00 0.10 0.000 0.004 A2 0.70 0.80 0.028 0.031 b1 0.15 0.25 0.006 0.010 b2 0.25 0.35 0.010 0.014 c 0.10 0.20 0.004 0.008 D 1.50 1.70 0.059 0.067 E 0.70 0.90 0.028 0.035 E1 1.45 1.75 0.057 0.069 e e1 0.50 TYP. 0.90 L 0.020 TYP. 1.10 0.035 0.40 REF. 0.043 0.016 REF. L1 0.10 0.30 0.004 0.012 θ 0 8 0 8 www.scr-ky.com O O O O 3／3