BCX56 BH HD

BCX56 BIPOLAR TRANSISTOR (NPN) FEATURES  Complementary to BCX53  High Current  Low Voltage  For Stages of Audio Amplifiers Application  Surface Mount device SOT-89 MECHANICAL DATA     Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.055 grams (approximate) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Peak Base Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency CLASSIFICATION OF hFE Rank Range Marking © SHENZHEN HOTTECH ELECTRONICS CO.,LTD Symbol VCBO VCEO VEBO IC IB IBM PC RθJA TJ TSTG Value 100 80 5 1 0.1 0.2 500 250 150 -55 ~+150 Unit V V V A A A mW °C/W °C °C (TA = 25°C unless otherwise specified) Symbol Min Typ Max Unit Conditions V(BR)CBO IC=100uA，IE=0 100 V V(BR)CEO IC=10mA，IB=0 80 V V(BR)EBO IE=10uA，IC=0 5 V ICBO 0.1 uA VCB=60V, IE=0 IEBO 0.1 uA VEB=5V, IC=0 VCE=2V, IC=5mA hFE1* 40 VCE=2V, IC=150mA hFE2* 63 250 VCE=2V, IC=0.5A hFE3* 25 IC=0.5A，IB=50mA VCE(sat)* 0.5 V VCE=2V, IC=0.5A VBE* 1 V fT 130 MHz VCE=5V,IC=10mA,f=100MHz H 63-250 BH K 63-160 BK E-mail:hkt@heketai.com L 100-250 BL 1/4 BCX56 BIPOLAR TRANSISTOR (NPN) Typical Characteristics Static Characteristic COLLECTOR CURRENT IC (mA) 250 DC CURRENT GAIN hFE 0.9mA 0.8mA 150 —— IC COMMON EMITTER VCE=2V COMMON EMITTER Ta=25℃ 1.0mA 200 hFE 1000 0.7mA 0.6mA 100 0.5mA 0.4mA 0.3mA 50 Ta=100℃ 300 Ta=25℃ 100 30 0.2mA IB=0.1mA 0 10 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE VCEsat 1000 —— VCE 5 1 IC VBEsat 1.0 BASE-EMMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMMITTER SATURATION VOLTAGE VCEsat (mV) IC —— 1000 (mA) IC β=10 300 100 Ta=100℃ Ta=25℃ 30 10 0.8 Ta=25℃ Ta=100℃ 0.6 0.4 1 10 100 COLLECTOR CURRENT IC 1000 —— IC 1000 1 10 (mA) 100 COLLECTOR CURRENT VBE Cob/ Cib 300 COMMON EMITTER VCE=2V —— CAPACITANCE C (pF) 100 Ta=25℃ 10 1 0.2 0.4 0.6 0.8 BASE-EMITTER VOLTAGE 500 fT —— VBE VCB/ VEB f=1MHz IE=0/IC=0 Ta=25℃ 10 1 0.3 (V) PC 600 100 COMMON EMITTER VCE=5V 10 3 REVERSE BIAS VOLTAGE IC 1000 (mA) Cob 1 0.1 1.0 IC Cib 100 Ta=100℃ COLLECTOR POWER DISSIPATION PC (mW) COLLECTOR CURRENT IC (mA) 100 COLLECTOR CURRENT β=10 TRANSITION FREQUENCY fT (MHz) 10 (V) —— V 20 (V) Ta 500 400 300 200 100 Ta=25℃ 10 10 100 30 COLLECTOR CURRENT IC © SHENZHEN HOTTECH ELECTRONICS CO.,LTD (mA) 0 0 25 50 75 AMBIENT TEMPERATURE E-mail:hkt@heketai.com 100 Ta 125 150 (℃ ) 2/4 BCX56 BIPOLAR TRANSISTOR (NPN) SOT-89 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 D1 1.550REF 0.061REF E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e 1.500TYP 0.060TYP e1 3.000TYP 0.118TYP L 0.900 1.200 0.035 0.047 SOT-89 Suggested Pad Layout Note: 1.Controlling dimension: in millimeters 2.General tolerance: ±0.05mm 3.The pad layout is for reference purposes only © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 3/4 BCX56 BIPOLAR TRANSISTOR (NPN) SOT-89 Tape and Reel SOT-89 Embossed Carrier Tape DIMENSIONS ARE IN MILLIMETER TYPE A B C d E F P0 P P1 W SOT-89 4.85 4.45 1.85 Ø1.50 1.75 5.50 4.00 8.00 2.00 12.00 TOLERANCE ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 SOT-89 Tape Leader and Trailer SOT-89 Reel DIMENSIONS ARE IN MILLIMETER REEL OPTION 7’’ DIA TOLERANCE D D1 D2 G H I W1 W2 Ø178 54.40 13.00 R78 R25.60 R6.50 13.20 16.50 ±2 ±1 ±1 ±1 ±1 ±1 ±1 ±1 © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 4/4