HX3141-AF

HX1001 HX3141 Tiny Package, High Efficiency, Step-up DC/DC Converter Features Description  Input Voltage Range: 1.1V ～ 5.5V The HX3141 is a compact, high efficiency, and  Internal MOSFET with High Switch low voltage step-up DC/DC converter including Current up to 3A an error amplifier, ramp generator, comparator,  90% Efficiency switch pass element and driver in which  Up to 450kHz Switching Frequency providing a stable and high efficient operation  SOT-23-6L Package Applications  PDA  DSC  LCD Panel  RF-Tags  MP3  Portable Instruments  Wireless Equipments w w w. h x s e m i . c o m over a wide range of load currents. It operates in stable waveforms without external compensation. The high switching rate minimized the size of external components. Besides, the low quiescent current together with high efficiency maintains long battery lifetime. The output voltage is set with two external resistors. The HX3141 is available in the industry standard SOT-23-6L power packages. 1 HX3141 Typical Application Circuit *VOUT = 1.212V • [1 + (R1/R2)]. Figure 1: (1.1V Stat-up Input Voltage) Absolute Maximum Ratings (Note 1)  Supply Voltage…………………………………………………………………………..….…−0.3V ～ 6V  SW Pin Switch Voltage………………………………………………………………..………−0.3V ～ 6V  Other I/O Pin Voltages……………………………………………………………………...…−0.3V ～ 6V  SW Pin Switch Current ………………………………………………………………...………………..4A  Operating Junction Temperature…………………………………………………….…-40℃ ～ +125℃  Storage Temperature Range ………………………………………………………….−65℃ ～ +150℃  Lead Temperature (Soldering 10 sec.) …………………………………………………………...+ 265℃ Note 1: Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may remain possibility to affect device reliability. Pin Description www.hxsemi.com PIN NAME FUNCTION 1/3 GND Ground 2 SW Switch Node for Output 4 FB Feedback 5 VDD Input Positive Power Pin 6 EN ON/OFF Control(High Enable) 2 HX3141 Electrical Characteristics Operating Conditions: TA = 25°C, VIN = 1.5V, VDD set to 3.3V, unless otherwise specified. SYMBOL VSTART VIN INO LOAD PARAMETER Start-up Voltage CONDITIONS ILOAD=1mA Operating Voltage range VIN=1.5V, VOUT=3.3V VFB Feedback Reference Voltage Close Loop, VDD=3.3V fOSC Switching Frequency VDD=3.3V RON SW ON Resistance VDD=3.3V Line Regulation ΔVLOAD Load Regulation VENH En Input High VENL En Input Low www.hxsemi.com TYP MAX 1.1 1.1 No Load Current (VIN) ΔVLINE MIN V 5.5 70 1.182 VIN=1.5V ～ 2.5V, ILOAD=100mA VIN=2.5V, ILOAD=1mA ～ 300mA 1.212 UNITS V μA 1.242 V 450 kHz 0.07 Ω 25 mV/V 0.05 mV/mA 1 V 0.6 V 3 HX3141 Typical Performance Characteristics Efficiency vs. Output Current (VOUT=5V) 100 100 90 90 80 70 80 VIN =3V VIN =2V VIN =4.2V 60 Efficiency (%) Efficiency (%) Efficiency vs. Output Current (Vout=3.3V) 50 40 30 40 30 10 10 0 0 800 1200 1600 2000 2400 0 Output Current (mA) 320 640 960 1280 1600 Output Current (mA) Supply Current vs. Supply Voltage (VOUT=3.3V Io=0A) Supply Current vs. Supply Voltage (VOUT=5V Io=0A) 0.1 0.35 0.3 0.08 Supply Current(mA) Supply Current(mA) VIN =2V 50 20 400 VIN =1.5V 60 20 0 VIN =3V 70 0.25 0.2 0.15 0.1 0.06 0.04 0.02 0.05 0 0 1 1.5 2 2.5 3 3.5 4 Supply Voltage (V) www.hxsemi.com 4.5 5 1.5 1.8 2.1 2.4 2.7 3 Supply Voltage (V) 4 HX3141 Output Voltage vs. Load Current (VIN=3V,VOUT=5V) 5.1 Output Voltage vs. Load Current (VIN=3V,VOUT=3.3V) 3.4 3.35 5 Output Voltage (V) Output Voltage (V) 3.3 4.9 4.8 4.7 4.6 3.25 3.2 3.15 3.1 3.05 4.5 3 0 300 600 900 1200 1500 Load Current (mA) 0 320 640 960 1280 1600 Load Current (mA) Pin Information GND (Pin 1/3): Signal and Power Ground. Provide a short direct PCB path between GND and the (–) side of the output capacitor(s). SW (Pin 2): Switch Pin. Connect inductor between SW and VIN. Keep these PCB trace lengths as short and wide as possible to reduce EMI and voltage overshoot. FB (Pin 4): Feedback Input to the gm Error Amplifier. Connect resistor divider tap to this pin. The output voltage can be adjusted from 1.8V to 5.5V by: VOUT = 1.212V • [1 + (R1/R2)] VDD (Pin 5): Input Positive Power Pin. EN (Pin 6): En Control Input. Forcing this pin above 1V enables the part. Forcing this pin below 0.6V shuts down the device. Do not leave EN floating. www.hxsemi.com 5 HX3141 Application Information Output Voltage Setting Referring to Typical Application Circuits, the output voltage of the switching regulator (VOUT) can be set with Equation (1). Feedback Loop Design Referring to the Typical Application Circuits. The selection of R1 and R2 based on the trade-off between quiescent current consumption and interference immunity is stated below:  Follow Equation (1)  Higher R reduces the quiescent current (Path current = 1.212V/R2), however resistors beyond 5MW are not Recommended. Lower R gives better noise immunity, and is less sensitive to interference, layout parasitics, FB  node leakage, and improper probing to FB pin. For applications without standby or suspend modes, lower values of R1 and R2 are preferred. For applications concerning the current consumption in standby or suspend modes, the higher values of R1 and R2 are needed. Such high impedance feedback loop is sensitive to any interference, which requires careful PCB layout and avoid any interference, especially to FB pin. To improve the system stability, a proper value capacitor between FB pin and GND pin is suggested. An empirical suggestion is around 22pF. PCB Layout Guide PCB Layout shall follow these guidelines for better system stability:  A full GND plane without gap break.  VDD to GND noise bypass - Short and wide connection for the 20-100μF capacitor between Pin 5 and Pin 1.  VIN to GND noise bypass - Add a 10μF capacitor close to L1 inductor, when VIN is not an idea voltage source.  Minimized FB node copper area and keep far away from noise sources. www.hxsemi.com 6 HX3141 Packaging Information SOT-23-6L Package Outline Dimension Symbol Dimensions In Millimeters Min Max Dimensions In Inches Min Max A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 1.500 1.700 0.059 0.067 E1 2.650 2.950 0.104 0.116 e 0.950(BSC) 0.037(BSC) e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 θ 0° 8° 0° 8° Subject changes without notice. www.hxsemi.com 7 Information furnished by Hexin Semiconductor is believed to be accurate and reliable. However, no responsibility is assumed for its use.