WM02P06H

Document: W0803066, Rev:D WM02P06H H P-Channel MOSFET Features D ⚫ VDS= -20 V, ID = -0.66 A RDS(on) < 0.52Ω @ VGS = -4.5 V RDS(on) < 0.78Ω @ VGS = -2.5V ⚫ Enables High Density PCB Manufacturing ⚫ Low Voltage Drive Makes this Device Ideal for Portable G Equipment ⚫ Advanced Trench Process Technology ⚫ ESD Protected S SOT-723 Mechanical Characteristics ⚫ SOT-723 Package ⚫ Marking : Making Code ⚫ RoHS Compliant Schematic & PIN Configuration D G D G S S S Device symbol SOT-723(Top View) Absolute Maximum Rating Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±10 V Continuous Drain Current ID -0.66 A Pulsed Drain Current IDM -1.2 A Power Dissipation PD 150 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 to +150 °C Thermal Resistance from Junction to Ambient RθJA 833 °C/W ©2019 WAYON Corporation www.way-on.com 1 / 4 P Channel MOSFET WM02P06H Electrical Characteristics (Tamb=25°C unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit -20 - - V Static Characteristics Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0V - - -1 µA Gate-Body Leakage Current IGSS VDS = 0V, VGS = ±10V - - ±20 µA VGS = -4.5V, ID = -0.66A - 450 520 VGS = -2.5V, ID = -0.60A - 650 780 VGS = -1.8V, ID = -0.50A - 950 - VDS = VGS, ID = -250µA -0.3 -0.65 -1.1 - 113 - - 15 - Drain-Source On-State Resistance1 Gate Threshold Voltage1 RDS(on) VGS(th) VGS = 0V, ID = - 250µA mΩ V Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 9 - Turn-on Delay Time2 td(on) - 9 - Turn-on Rise Time2 tr - 5.7 - Turn-off Delay Time2 td(off) - 32.6 - - 20.3 - - - -1.2 VGS = 0V, VDS = -16V, f = 1MHz pF Switching Characteristics Turn- off Fall Time2 VDS = -10V, VGS = -4.5V, ID = -0.2A, RG= 10Ω tf ns Source-Drain Diode Characteristics Body Diode Voltage VDS IS= -0.5A, VGS = 0V V Notes : 1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%. 2) Guaranteed by design, not subject to production testing ©2019 WAYON Corporation www.way-on.com 2 / 4 P Channel MOSFET WM02P06H Typical Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. RDS(ON) vs. ID Figure 4. RDS(ON) vs. VGS Figure 5. IS vs. VSD ©2019 WAYON Corporation Figure 6. Threshold Voltage www.way-on.com 3 / 4 P Channel MOSFET WM02P06H Outline Drawing – SOT-723 PACKAGE OUTLINE D D b1 G θ S E1 E DIMENSIONS C e SYMBOL b MIN MAX A 0.430 0.500 0.017 0.020 b 0.170 0.270 0.007 0.011 b1 0.270 0.370 0.011 0.015 C 0.080 0.150 0.003 0.006 D 1.150 1.250 0.045 0.049 E 1.150 1.250 0.045 0.049 E1 0.750 0.850 0.030 0.033 DIM INCHES MILLIMETERS C 0.0118 0.30 M 0.0390 1.00 e 0.0157 0.40 e1 0.0314 0.80 b 0.0165 0.42 M e e1 e 0.400BSC 0.016 BSC θ 7°REF 7°REF Notes DIMENSIONS C INCHES MAX b A MILLIMETER MIN 1. Dimensioning and tolerances per ANSI Y14.5M, 1985. 2. Controlling Dimension: Millimeters. Marking Codes Part Number WM02P06H Marking Code 06K Package Information Qty：8k/Reel CONTACT INFORMATION No.1001, Shiwan (7) Road, Pudong District, Shanghai, P.R.China.201207 Tel: 86-21-68969993 Fax: 86-21-50757680 Email: market@way-on.com WAYON website: http://www.way-on.com For additional information, please contact your local Sales Representative. ® is registered trademark of Wayon Corporation. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. ©2019 WAYON Corporation www.way-on.com 4 / 4