LSG70R450GT

LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT LonFET Lonten N-channel 700V, 11A, 0.45Ω LonFETTM Power MOSFET Description LonFET TM Product Summary Power MOSFET is fabricated using VDS @ Tj,max 750V RDS(on),max 0.45Ω resulting device has extremely low on resistance, IDM 30A making it especially suitable for applications which Qg,typ 23nC advanced super junction technology. The require superior power density and outstanding efficiency. Features  Ultra low RDS(on)  Ultra low gate charge (typ. Qg = 23nC)  100% UIS tested  RoHS compliant TO-220MF TO-263 TO-262 TO-251 TO-252 D Applications G  Power faction correction (PFC).  Switched mode power supplies (SMPS).  Uninterruptible power supply (UPS). S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Value Unit 700 V 11 A 7 A 30 A VGSS ±30 V EAS 270 mJ EAR 0.5 mJ IAR 11 A 33 W 0.26 W/°C TO-262 ( TC = 25°C ) 125 W - Derate above 25°C 1 W/°C Drain-Source Voltage Symbol VDSS Continuous drain current ( TC = 25°C ) ID ( TC = 100°C ) 1) Pulsed drain current IDM Gate-Source voltage Avalanche energy, single pulse 2) Avalanche energy, repetitive 3) Avalanche current, repetitive Power Dissipation 3) TO-220MF ( TC = 25°C ) - Derate above 25°C PD Power Dissipation Mounting torque To-262 ( M3 and M3.5 screws ) 60 Mounting torque To-220MF ( M2.5 screws ) 50 Ncm Operating and Storage Temperature Range TJ, TSTG Continuous diode forward current Diode pulse current Version 2.0 2018 -55 to +150 °C IS 11 A IS,pulse 30 A 1 www.lonten.cc LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT LonFET Thermal Characteristics TO-262/TO-252/ TO-251/TO-263 Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case RθJC 2.5 °C/W Thermal Resistance, Junction-to-Ambient RθJA 62 °C/W Tsold 260 °C Value Unit Soldering temperature, wavesoldering only allowed at leads. (1.6mm from case for 10s) Thermal Characteristics TO-220MF Parameter Symbol Thermal Resistance, Junction-to-Case RθJC 3.8 °C/W Thermal Resistance, Junction-to-Ambient RθJA 80 °C/W Tsold 260 °C Soldering temperature, wavesoldering only allowed at leads. (1.6mm from case for 10s) Package Marking and Ordering Information Device Device Package Marking Units/Tube LSD70R450GT TO-220MF LSD70R450GT 50 LSE70R450GT TO-263-2L LSE70R450GT LSF70R450GT TO-262 LSF70R450GT LSG70R450GT TO-252 LSG70R450GT LSH70R450GT TO-251 LSH70R450GT Electrical Characteristics Parameter Units/Real 800 50 2500 4680 2500 Tc = 25°C unless otherwise noted Symbol Test Condition Min. Typ. Max. Unit Static characteristics Drain-source breakdown voltage BVDSS VGS=0 V, ID=0.25 mA 700 - - V Gate threshold voltage VGS(th) VDS=VGS, ID=0.25mA 2.5 3.5 4.5 V Drain cut-off current IDSS VDS=700 V, VGS=0 V, μA Tj = 25°C - - 1 Tj = 125°C - 10 - Gate leakage current, Forward IGSSF VGS=30 V, VDS=0 V - - 50 nA Gate leakage current, Reverse IGSSR VGS=-30 V, VDS=0 V - - -50 nA Drain-source on-state resistance RDS(on) VGS=10 V, ID=5.5 A - Tj = 25°C - 0.40 0.45 Ω Tj = 150°C - 0.94 - Gate resistance RG f=1 MHz, open drain - 4.6 - Input capacitance Ciss VDS = 25 V, VGS = 0 V, - 879 - Output capacitance Coss f = 1 MHz - 460 - Reverse transfer capacitance Crss - 6 - Turn-on delay time td(on) VDD = 380V, ID = 5.5A - 15 - Rise time tr RG = 4.7Ω, VGS=10V - 27 - Turn-off delay time td(off) - 69 - Ω Dynamic characteristics Version 2.0 2018 2 pF ns www.lonten.cc LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT LonFET Fall time tf - 11 - Gate charge characteristics Gate to source charge Qgs VDD=480 V, ID=5.5A, - 6.2 - Gate to drain charge Qgd VGS=0 to 10 V - 8.5 - Gate charge total Qg - 22.8 - Vplateau - 5.5 - V nC Reverse diode characteristics Diode forward voltage VSD VGS=0 V, IF=5.5A - 1.0 - V Reverse recovery time trr VR=50 V, IF=11A, - 345 - ns Reverse recovery charge Qrr dIF/dt=100 A/μs - 3.8 - μC Peak reverse recovery current Irrm - 22 - A Notes: 1. Limited by maximum junction temperature, maximum duty cycle is 0.75. 2. IAS = 3A, VDD = 60V, Starting Tj= 25°C. 3. Repetitive Rating: Pulse width limited by maximum junction temperature. Version 2.0 2018 3 www.lonten.cc LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT LonFET Electrical Characteristics Diagrams Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS=6.5V Drain current ID (A) Drain current ID (A) Common Source Tc = 25°C VDS=20 V Pulse test VGS=10V VGS=7V Common Source Tc = 25°C Pulse test VGS=6V VGS=5.5V Drain−source voltage VDS (V) Gate−source voltage VGS (V) Figure 3. On-Resistance Variation vs. Drain Current Figure 4. Threshold Voltage vs. Temperature 1.3 Vth , (Normalized) Gate threshold voltage RDS (on) (Ω) 1.2 VGS = 10V Tc = 25°C Pulse test 1.1 1 0.9 0.8 0.7 IDS=0.25 mA Pulse test 0.6 0.5 -60 Drain current ID (A) -20 0 20 40 60 80 100 120 140 Junction temperature Tj (°C) Figure 5. Breakdown Voltage vs. Temperature Figure 6. On-Resistance vs. Temperature 2.5 RDS(on), (Normalized) Drain-Source On-Resistance 1.2 BVDSS, (Normalized) Drain-Source Breakdown Voltage -40 1.1 1 0.9 VGS=0 V V =0 V IDSGS=0.25 mA IDS=0.25 mA Pulse test Pulse test 0.8 -60 -40 -20 0 20 40 60 80 100 120 140 160 Junction temperature Tj (°C) Version 2.0 2018 2 1.5 1 VGS=10 V V =10 V IDSGS =3.5 A IDS=5.5 A Pulse test Pulse test 0.5 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Junction temperature Tj (°C) 4 www.lonten.cc 160 LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT LonFET Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characterist Gate-Source Voltage VGS (V) Capacitance (pF) Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss Coss Notes: f = 1 MHz VGS=0 V ID = 5.5A Crss Drain-Source Voltage VDS (V) Total Gate Charge QG (nC) Figure 9.1 Maximum Safe Operating Area Figure 9.2 Maximum Safe Operating Area TO-263-2L/TO-262/TO-252/TO-251 Drain current ID (A) Drain current ID (A) TO-220MF Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Figure 10.1 Power Dissipation vs. Temperature Figure 10.2 Power Dissipation vs. Temperature TO-263-2L/TO-262/TO-252/TO-251 Drain power dissipation PD (W) Drain power dissipation PD (W) TO-220MF Case temperature Tc (°C) Case temperature Tc (°C) Version 2.0 2018 5 www.lonten.cc LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT LonFET Figure 11.1 Transient Thermal Response Curve Thermal Resistance Z θJC Normalized Transient TO-220MF Pulse Width t (s) Figure 11.1 Transient Thermal Response Curve Thermal Resistance Z θJC Normalized Transient TO-263-2L/TO-262/TO-252/TO-251 Pulse Width t (s) Version 2.0 2018 6 www.lonten.cc LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT LonFET Gate Charge Test Circuit & Waveform Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms Version 2.0 2018 7 www.lonten.cc LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT LonFET Mechanical Dimensions for TO-263 E A L2 H2 A1 θ1 Ø P1 H D1 DEP A3 A2 θ1 L1 θ2 c b L b1 e MM SYMBOL L4 θ 2-θ2 E2 INCH MIN NOM MAX MIN NOM MAX A 4.40 4.57 4.70 0.173 0.180 0.185 A1 1.22 1.27 1.32 0.048 0.050 0.052 A2 2.59 2.69 2.79 0.102 0.106 0.110 A3 0.00 0.10 0.20 0.000 0.004 0.008 b 0.77 0.813 0.90 0.030 0.032 0.035 b1 1.20 1.270 1.36 0.047 0.050 0.054 c 0.34 0.381 0.47 0.013 0.015 0.019 D1 8.60 8.70 8.80 0.339 0.343 0.346 E 10.00 10.16 10.26 0.394 0.400 0.404 E2 10.00 10.10 10.20 0.394 0.398 0.402 e 2.54 BSC 0.100 BSC H 14.70 15.10 15.50 0.579 0.594 0.610 H2 1.17 1.27 1.40 0.046 0.050 0.055 L 2.00 2.30 2.60 0.079 0.091 0.102 L1 1.45 1.55 1.70 0.057 0.061 0.067 L2 2.50 REF 0.098 REF L4 0.25 BSC 0.010 BSC θ 0° 5° 8° 0° 5° 8° θ1 5° 7° 9° 5° 7° 9° θ2 1° 3° 5° 1° 3° 5° ØP1 1.40 1.50 1.60 0.055 0.059 0.063 DEP 0.05 0.10 0.20 0.002 0.004 0.008 TO-263 Part Marking Information Lonten Logo Lonten LSE70R450GT Part Number ABYWW99 “AB” Foundry & Assembly Code “99” Manufacturing Code “YWW” Date Code Version 2.0 2018 8 www.lonten.cc LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT LonFET Mechanical Dimensions for TO-252 E c L3 b3 COMMON DIMENSIONS L5 θ1 mm D1 SYMBOL H D .1 K ×0 R .2 MA Ø 1 EP TO E1 A2 MIN NOM MAX A 2.20 2.30 2.38 A1 0.00 — 0.10 A2 0.97 1.07 1.17 θ1 L4 θ1 e b θ2 b 0.72 0.78 0.85 b1 0.71 0.76 0.81 b3 5.23 5.33 5.46 c 0.47 0.53 0.58 c1 0.46 0.51 0.56 D 6.00 6.10 6.20 K A b D1 C A1 L (L1) 6.70 4.70 4.83 4.92 2.286BSC H 9.90 10.10 10.30 L 1.40 1.50 1.70 c c1 b1 6.60 E1 e PLATING 镀层 b BASE METAL 基材 6.50 θ L2 C 5.30REF E SECTION C-C L1 2.90REF L2 0.51BSC L3 0.90 — 1.25 L4 0.60 0.80 1.00 L5 1.70 1.80 1.90 θ 0° — 8° θ1 5° 7° 9° θ2 5° 7° 9° K 0.40REF TO-252 Part Marking Information Lonten Logo Lonten LSG70R450GT ABYWW99 Part Number “AB” Foundry & Assembly Code “99” Manufacturing Code “YWW” Date Code Version 2.0 2018 9 www.lonten.cc LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT LonFET Mechanical Dimensions for TO-251 COMMON DIMENSIONS MM SYMBOL MIN NOM MAX A 2.20 2.30 2.38 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b2 0.00 0.04 0.10 b2’ 0.00 0.04 0.10 b3 5.20 5.33 5.46 c 0.43 0.53 0.61 D 5.98 6.10 6.22 D1 5.30REF E 6.40 6.60 6.73 E1 4.63 — — e 2.286BSC H 16.22 16.52 16.82 L1 9.15 9.40 9.65 L3 0.88 1.02 1.28 L5 1.65 1.80 1.95 TO-251 Part Marking Information Lonten Logo “AB” Foundry & Assembly Code Lonten LSH70R450GT ABYWW99 Part Number “99” Manufacturing Code “YWW” Date Code Version 2.0 2018 10 www.lonten.cc LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT LonFET Mechanical Dimensions for TO-220MF E G1 COMMON DIMENSIONS A G2 A1 Ø P1 F4 H1 Q E A5 A2 Ø P3 F2 D θ2 ØP MM SYMBOL F1 DEP F3 F1 Ø P2 DEP INCH MIN NOM MAX MIN NOM MAX 10.04 10.20 10.36 0.395 0.402 0.408 A 4.50 4.70 4.90 0.177 0.185 0.193 A1 2.34 2.54 2.74 0.092 0.100 0.108 A2 0.70 0.85 1.00 0.028 0.033 0.039 A4 2.65 2.75 2.85 0.104 0.108 0.112 D1 Ø P1 Ø P1 θ1 L1 G3 A4 θ1 b1 A5 1.00REF 0.039REF C 0.42 0.50 0.58 0.017 0.020 0.023 D 15.67 15.87 16.07 0.617 0.625 0.633 Q 9.20REF 0.362REF H1 6.70REF 0.264REF L b2 C e e 2.54BSC 0.1BSC ØP 3.183REF 0.125REF L 12.78 12.98 13.18 0.503 0.511 0.519 L1 3.25 3.45 3.65 0.128 0.136 0.144 D1 θ1 9.17REF ØP1 1.40 1.50 1.60 0.055 0.059 0.063 ØP2 1.15 1.20 1.25 0.045 0.047 0.049 ØP3 K1 E E1 TO-220MF Part Marking Information Lonten Logo 0.362REF 3.45REF 0.136REF θ1 5° 7° 9° 5° 7° 9° θ2 - 45° - - 45° - DEP 0.05 0.10 0.15 0.002 0.004 0.006 F1 1.90 2.00 2.10 0.075 0.079 0.083 F2 13.80 13.90 14.00 0.543 0.547 0.551 F3 3.20 3.30 3.40 0.126 0.130 0.134 F4 5.30 5.40 5.50 0.209 0.213 0.217 G1 6.60 6.70 6.80 0.260 0.264 0.268 G2 6.90 7.00 7.10 0.272 0.276 0.280 G3 1.10 1.30 1.50 0.043 0.051 0.059 b1 1.05 1.20 1.35 0.041 0.047 0.053 b2 0.70 0.80 0.85 0.028 0.031 0.033 E1 9.90 10.00 10.10 0.390 0.394 0.398 K1 0.65 0.70 0.75 0.026 0.028 0.030 Lonten LSD70R450GT Part Number ABYWW99 “AB” Foundry & Assembly Code “YWW” Date Code Version 2.0 2018 “99” Manufacturing Code 11 www.lonten.cc LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT LonFET Mechanical Dimensions for TO-262 COMMON DIMENSIONS A θ3 Ø .014[0.356] M X Y H2 D1 D MIN NOM MAX MIN NOM MAX 4.57 4.70 0.175 0.180 0.185 A1 1.22 1.27 1.32 0.048 0.050 0.052 A2 2.29 2.67 2.92 0.090 0.105 0.115 A DEP θ2 θ1 L1 A2 INCH 4.45 θ1 L2 PIN #1 ID 1脚标注 Ø P1 L3 MM SYMBOL A1 b 0.71 0.813 0.97 0.028 0.032 0.038 b2 1.22 1.270 1.40 0.048 0.050 0.055 c 2 0.38 0.381 0.76 0.015 0.015 0.030 D 23.20 23.61 24.02 0.913 0.930 0.946 D1 8.38 8.70 8.89 0.330 0.343 0.350 E1 10.03 10.16 10.54 0.395 0.400 0.415 b L b2 e c e 2.54 BSC H2 - - 1.31 - - 0.052 L 13.34 13.73 14.10 0.525 0.541 0.555 L1 3.30 3.56 4.06 0.130 0.140 0.160 L2 θ4 1.49 REF L3 E1 0.100 BSC 0.059 REF 3.4 REF 0.134 REF ØP1 1.07 1.20 1.32 0.042 0.047 0.052 θ1 - 7° - - 7° - θ2 - 3° - - 3° - θ3 - - 12° - - 12° θ4 - - 3° - - 3° DEP 0.10 0.18 0.25 0.004 0.007 0.010 TO-262 Part Marking Information Lonten Logo Lonten LSF70R450GT Part Number ABYWW99 “AB” Foundry & Assembly Code “99” Manufacturing Code “YWW” Date Code Version 2.0 2018 12 www.lonten.cc LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT LonFET Disclaimer The content specified herein is for the purpose of introducing LONTEN's products (hereinafter "Products"). The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. LONTEN does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of the Products or technical information described in this document. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). LONTEN shall bear no responsibility in any way for use of any of the Products for the above special purposes. Although LONTEN endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a LONTEN product. The content specified herein is subject to change for improvement without notice. When using a LONTEN product, be sure to obtain the latest specifications. Oct. 2018 Revision 2.0 Version 2.0 2018 13 www.lonten.cc