JST80N30T2A

JST80N30T2A 30V N-Channel Mosfet TO-252-2L FEATURES RDS(ON)≤ 5m Ω @VGS=10V RDS(ON)≤ 7.5m Ω @VGS=4.5V APPLICATIONS Load Switch PWM Application Power Management N-CHANNEL MOSFET MARKING YYMM:Date Code(year&month) Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol bol Param Max. Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V TC = 25℃ 90 A TC = 100℃ 58 A 360 A 250 mJ 90 W 1.67 ℃/W -55 to +175 ℃ ID IDM Continuous Drain Current Pulsed Drain Current note1 EAS Single Pulsed Avalanche Energy PD Power Dissipation RθJC TJ, TSTG note2 TC = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range Version :J-B 1／5 JST80N30T2A Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol bol Param Test Condition Min. Typ. Max. Units 30 - - V Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250μA A IDSS Zero Gate Voltage Drain Current VDS =30V, VGS = 0V, - - 1.0 μA IGSS Gate to Body Leakage Current VDS =0V,VGS = ±20V - - ±100 nA Gate Threshold Voltage VDS= VGS, ID=250μA 1 1.0 .0 1.5 2.5 V On Characteristics VGS(th) RDS(on) gFS Static Drain-Source on-Resistance VGS =10V, ID =20A - 3.6 5 note3 VGS =4.5V, ID =15A - 5 7.5 Forward Transconductance VDS=5V, ID=15A - 28 - S - 1950 - pF - 320 - pF - 240 - pF - 42 - nC - 4 - nC 14 - nC - 13 - ns - 36 - ns - 43 - ns - 16 - ns mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge ha VDS =15V, VGS =0V, f = 1.0MHz VDS =25V, ID=20A, VGS =10V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf Turn-off Fall Time VDS=15V, Rl=0.75Ω, RGEN=3Ω, VGS=10V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 90 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 360 A VSD Drain to Source Diode Forward Voltage - - 1.2 V - 16 - ns - 5 - nC trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS = 0V, IS=30A 3 IF=20A,dI/dt=100A/μs Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2.. EAS condition TJ=25℃,VDD=30V,VG=10V,L=0.5mH，RG=25Ω Version :J-B 2／5 JST80N30T2A Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics 100 ID (A) 10V 80 100 7V ID (A) 80 5V 3.5V 60 60 125℃ 40 40 3V 25℃ 20 20 VGS=2.5V VDS(V) 0 0 1 2 3 4 5 0 VGS(V) 0 1.0 4.0 103 VGS=4.5V 4.0 102 TJ=150℃ VGS=10V 3.0 TJ=25℃ 101 2.0 1.0 0 VGS=0V ID(A) 0 10 20 30 40 100 0.2 Figure 5: Gate Charge Characteristics 10 8 6.0 5.0 IS(A) RDS(ON) (mΩ) 5.0 3.0 Figure 4: Body Diode Characteristics Figure 3:On-resistance vs. Drain Current 6.0 2.0 0.4 0.6 0.8 VSD(V) 1.0 1.2 1.4 1.6 1.8 Figure 6: Capacitance Characteristics VGS(V) 2800 VDS=25V ID=20A C(pF) 2400 Ciss 2000 6 1600 1200 4 Coss 800 2 0 0 400 Qg(nC) 9 Version :J-B 18 Crss VDS(V) 0 27 36 45 0 6 12 18 24 30 3／5 JST80N30T2A Figure 7: Normalized Breakdown Voltage vs. Junction Temperature VBR(DSS)(V) 1.3 Figure 8: Normalized on Resistance vs. Junction Temperature RDS(on)(mΩ) 2.5 1.2 2.0 1.1 1.5 1.0 1.0 0.9 Tj (℃) 0 -10 -50 0 50 100 150 200 Figure 9: Maximum Safe Operating Area 0.5 -100 -5 0 50 100 150 200 Figure 10: Maximum Continuous Drain Current vs. Case Temperature ID(A) 120 1000 Tj (℃) ID(A) Limited by R DS(on) 100 10μs 100μs 100 80 1ms 10ms 10 60 100ms DC 40 TC=25℃ Single pulse 1 0.1 0.1 20 VDS (V) 10 1 0 100 0 25 50 Tc (℃) 75 100 125 150 175 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-252) 101 ZthJ-C(℃/W) 100 10-1 PDM D=0.5 t1 D=0.2 D=0.1 t2 D=0.05 D=0.02 D=0.01 Notes: Single pulse 1.Duty factor D=t1/t2 2.Peak TJ=PDM*ZthJC+TC TP(s) 10-2 10-3 -6 10 10-5 Version :J-B 10-4 10-3 10-2 10-1 100 101 4／5 JST80N30T2A Version :J-B 5／5