MDT15N10

Green Product MDT15N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The MDT15N10 uses advanced trench technology to provide ● VDS = 100V,ID = 15A excellent RDS(ON), low gate charge. It can be used in a RDS(ON) < 90mΩ @ VGS=10V RDS(ON) < 115mΩ @ VGS=4.5V wide variety of applications. ● High density cell design for lower Rdson Application ● Fully characterized avalanche voltage and current ●Power switching application ● Good stability and uniformity with high EAS ●Hard switched and High frequency circuits ● Excellent package for good heat dissipation ●Uninterruptible power supply 100% UIS TESTED！ 100% DVDS TESTED！ TO-252-2L Top View Schematic diagram Package Marking And Ordering Information Device Marking MDT15N10 Ordering Codes Package MDT15N10 TO-252 Product Code Packing MDT15N10 Absolute Maximum Ratings (TA=25℃ Parameter unless otherwise noted) Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID (Note 1) Drain Current-Pulsed IDM Maximum Power Dissipation(Tc=25℃) PD (Note 2) Single pulse avalanche energy EAS Operating Junction and Storage Temperature Range TJ,TSTG Reel Limit Unit 100 V ±20 V 15 A 40 A 31 W 21 mJ -55 To 175 ℃ 4.8 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Case Page1 RθJC www.mns-kx.com Priamry Green Product MDT15N10 Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 100 - - V Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1 1.8 2.4 V Drain-Source On-State Resistance(Note 3) RDS(ON) VGS=10V, ID=5A - 80 90 90 115 - 5 - S - 680 - pF - 110 - pF - 85 - pF - 10 - nS On Characteristics Forward Transconductance gFS VGS=4.5V, ID=5A VDS=25V,ID=3.6A mΩ Dynamic Characteristics Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss Switching VDS=25V,VGS=0V, f=1.0MHz Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=50V, ID=5A, - 7 - nS td(off) VGS=10V,RGEN=2.5Ω - 34 - nS 9 - nS - 16 - nC - 4 - nC - 5 - nC - - 1.2 V Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=80V,ID=3A VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V,IS=15A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. EAS condition :T j=25℃,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production. Page2 www.mns-kx.com Priamry Green Product MDT15N10 Characteristics Curves Page3 Figure 1 Output Characteristics Figure 2 Transfer Characteristics Figure 3 On-Resistance vs. ID and VGS Figure 4 On-Resistance vs. Junction Temperature Figure 5 On-Resistance vs. VGS Figure 6 Body Diode Forward Voltage www.mns-kx.com Priamry Green Product MDT15N10 Figure 7 Gate-Charge Characteristics Figure 9 Maximum Forward Biased Safe Figure 8 Capacitance Characteristics Figure 10 Single Pulse Power Rating Operation Area Figure 11 Page4 Junction-to-Ambient Normalized Maximum Transient Thermal Impedance www.mns-kx.com Priamry Green Product MDT15N10 Test Circuit and Waveform Gate Charge Test Circuit Gate Charge Test Waveform Resistive Switching Test Circuit Resistive Switching Test Waveforms Unclamped Inductive Switching (UIS) Test Circuit Unclamped Inductive Switching (UIS) Test Waveforms Diode Recovery Test Circuit Page5 Diode Recovery Test Waveforms www.mns-kx.com Priamry Green Product MDT15N10 Package Description Values(mm) Items MIN MAX A 6.30 6.90 A1 0 0.13 B 5.70 6.30 C 2.10 2.50 D 0.30 0.60 E1 0.60 0.90 E2 0.70 1.00 F 0.30 0.60 G 0.70 1.20 L1 9.60 10.50 L2 2.70 3.10 H 0.60 1.00 M 5.10 5.50 N 2.09 2.49 R 0 .3 T 1.40 1.60 Y 5.10 6.30 TO-252 Page6 Package www.mns-kx.com Priamry