LNC7N60D

LNC7N60\LND7N60 Lonten N-channel 600V, 7A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced ID 7A planar VDMOS technology. The resulting device has low conduction resistance, RDS(on),max superior switching performance and high avalance Qg,typ 1.3Ω 20.6nC energy. Features  Low RDS(on)  Low gate charge (typ. Qg =20.6nC)  100% UIS tested  RoHS compliant TO-220 TO-220F D G Applications S  Power faction correction.  Switched mode power supplies.  LED driver. Pb N-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDSS Continuous drain current ( TC = 25°C ) ID Avalanche energy, single pulse Peak diode recovery dv/dt Power Dissipation 2) 3) 600 V 7 A A 28 A VGSS ±30 V EAS 405 mJ 5 V/ns IDM Gate-Source voltage Unit 4.2 ( TC = 100°C ) Pulsed drain current 1) Value dv/dt TO-220F ( TC = 25°C ) 39 W 0.31 W/°C 100 W 0.8 W/°C -55 to +150 °C 7 A 28 A Derate above 25°C PD Power Dissipation TO-220\ TO-251\ TO-252 ( TC = 25°C ) Derate above 25°C Operating juncition and storage temperature range TJ, TSTG Continuous diode forward current IS Diode pulse current IS,pulse Thermal Characteristics Parameter Symbol Value TO-220F TO-220\ TO-251\ TO-252 Unit Thermal resistance, Junction-to-case RθJC 3.2 1.25 °C/W Thermal resistance, Junction-to-ambient RθJA 62.5 110 °C/W Version 1.0 2018 1 www.lonten.cc LNC7N60\LND7N60 Package Marking and Ordering Information Device Device Package Marking Units/Tube LNC7N60 TO-220 LNC7N60 50 LND7N60 TO-220F LND7N60 50 Electrical Characteristics Parameter Units/Real Tc = 25°C unless otherwise noted Symbol Test Condition Min. Typ. Max. Unit Static characteristics Drain-source breakdown voltage BVDSS VGS=0 V, ID=250 uA 600 - - V Gate threshold voltage VGS(th) VDS=VGS, ID=250 uA 2 - 4 V Drain cut-off current IDSS VDS=600 V, VGS=0 V, Tj = 25°C - - 1 μA Tj = 125°C - 100 Gate leakage current, Forward IGSSF VGS=30 V, VDS=0 V - - 100 nA Gate leakage current, Reverse IGSSR VGS=-30 V, VDS=0 V - - -100 nA Drain-source on-state resistance RDS(on) VGS=10 V, ID=3.5 A - 1.0 1.3 Ω Input capacitance Ciss VDS = 25 V, VGS = 0 V, - 1112 - Output capacitance Coss f = 1 MHz - 90 - Reverse transfer capacitance Crss - 5 - Turn-on delay time td(on) VDD = 300 V, ID = 7 A - 12 - Rise time tr RG = 10 Ω, VGS=15 V - 30 - Turn-off delay time td(off) - 52 - Fall time tf - 12 Dynamic characteristics pF ns - Gate charge characteristics Gate to source charge Qgs VDD=480 V, ID=7 A, - 5.4 - Gate to drain charge Qgd VGS=0 to 10 V - 7.4 - Gate charge total Qg - 20.6 - Gate plateau voltage Vplateau - 5.1 - V nC Reverse diode characteristics Diode forward voltage VSD VGS=0 V, IF=7 A - - 1.5 V Reverse recovery time trr VR=300 V, IF=7 A, - 306 - ns Reverse recovery charge Qrr dIF/dt=100 A/μs - 2.1 - μC Peak reverse recovery current Irrm - 13.7 - A Notes: 1. Pulse width limited by maximum junction temperature. 2. L=10mH, IAS = 9A, VDD =60V, Starting Tj= 25°C. 3. ISD = 7A, di/dt≤100A/us, VDD≤BVDS, Starting Tj= 25°C. Version 1.0 2018 2 www.lonten.cc LNC7N60\LND7N60 Electrical Characteristics Diagrams Figure 1. Typical Output Characteristics Figure 2. Transfer Characteristics VGS=10V Tc = 25°C VGS=7.5V ID, Drain current (A) ID, Drain current (A) VGS=6.5V VGS=5.5V VGS=4.5V VDS ,Drain−source voltage (V) VGS ,Gate−source voltage (V) Figure 4. Threshold Voltage vs. Temperature On-Resistance (Ω) Vth , (Normalized) Gate threshold voltage Figure 3. On-Resistance Variation vs. Drain Current VGS = 10 V Tc = 25°C Pulse test IDS=0.25 mA Pulse test ID ,Drain current (A) Tj ,Junction temperature (°C) Figure 6. On-Resistance vs. Temperature RDS(on), (Normalized) Drain-Source On-Resistance Figure 5. Breakdown Voltage vs. Temperature BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS (on) , Drain-Source Tc = 150°C VGS=0 V IDS=0.25 mA Pulse test Tj ,Junction temperature (°C) Tj ,Junction temperature (°C) Version 1.0 2018 VGS=10 V IDS=2 A Pulse test 3 www.lonten.cc LNC7N60\LND7N60 Figure 8. Gate Charge Characterist VGS,Gate-Source Voltage (V) Capacitance (pF) Figure 7. Capacitance Characteristics Ciss Notes:f = 1 MHz,VGS=0 V Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss Crss VDS=480V, ID = 7 A VDS ,Drain-Source Voltage (V) QG ,Total Gate Charge (nC) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area TO-220F TO-220/ TO-251/TO-252 100us 100us 1ms ID ,Drain current (A) ID ,Drain current (A) 1ms 10ms Limited by R DC DS(on) Notes: T = 25°C c T = 150°C j Limited by R DS(on) DC Notes: T = 25°C c T = 150°C j Single Pulse Single Pulse VDS ,Drain-Source Voltage (V) VDS ,Drain-Source Voltage (V) Figure 11. Power Dissipation vs. Temperature Figure 12. Power Dissipation vs. Temperature TO-220/ TO-251/TO-252 PD ,power dissipation, (W) PD ,power dissipation, (W) TO-220F Tc ,Case temperature (°C) Tc ,Case temperature (°C) Version 1.0 10ms 2018 4 www.lonten.cc LNC7N60\LND7N60 Figure 14. Body Diode Transfer Characteristics ID ,Drain current (A) ISD ,Reverse Drain Current （A） Figure 13. Continuous Drain Current vs. Temperature Tc = 150° C Tc = 25°C VSD ,Source-Drain Voltage (V) Tc ,Case temperature (°C) Normalized Transient P DM Z θJC Thermal Resistance Figure 15 Transient Thermal Impendance,Junction to Case, TO-220F In descending order D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse t Duty = t/T Z (t)=3.2°C/W Max. T θJC t ,Pulse Width (s) Normalized Transient In descending order D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse P DM t Z θJC Thermal Resistance Figure 16. Transient Thermal Impendance,Junction to Case, TO-220/ TO-251/TO-252 Duty = t/T T Z (t)=1.25°C/W Max. θJC t ,Pulse Width (s) Version 1.0 2018 5 www.lonten.cc LNC7N60\LND7N60 Gate Charge Test Circuit & Waveform Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms Version 1.0 2018 6 www.lonten.cc LNC7N60\LND7N60 Mechanical Dimensions for TO-220 UNIT：mm SYMBOL MIN NOM A 4 4.8 B 1.2 1.4 B1 1 1.4 b1 0.75 0.95 c 0.4 0.55 D 15 16.5 D1 5.9 6.9 E 9.9 10.7 e 2.44 F 1.1 1.4 L 12.5 14.5 L1 3 3.5 4 ΦP 3.7 3.8 3.9 Q 2.5 3 Q1 2 2.9 Y 8.02 2.54 8.12 MAX 2.64 8.22 TO-220 Part Marking Information Lonten Logo “AB” Foundry & Assembly Code Lonten LNC7N60 ABYWW99 Part Number “99” Manufacturing Code “YWW” Date Code Version 1.0 2018 7 www.lonten.cc LNC7N60\LND7N60 Mechanical Dimensions for TO-220F UNIT：mm SYMBOL MIN NOM MAX A 4.5 4.9 A1 2.3 2.9 b 0.65 0.9 b1 1.1 1.7 b2 1.2 1.4 c 0.35 0.65 D 14.5 16.5 D1 6.1 6.9 E 9.6 10.3 E1 6.5 7 7.5 e 2.44 2.54 2.64 L 12.5 14.3 L1 9.45 10.05 L2 15 16 L3 3.2 4.4 ΦP 3 3.3 Q 2.5 2.9 TO-220F Part Marking Information Lonten Logo “AB” Foundry & Assembly Code “YWW” Date Code Version 1.0 2018 Lonten LND7N60 ABYWW99 Part Number “99” Manufacturing Code 8 www.lonten.cc LNC7N60\LND7N60 Disclaimer The content specified herein is for the purpose of introducing LONTEN's products (hereinafter "Products"). The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. LONTEN does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of the Products or technical information described in this document. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). LONTEN shall bear no responsibility in any way for use of any of the Products for the above special purposes. Although LONTEN endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a LONTEN product. The content specified herein is subject to change for improvement without notice. When using a LONTEN product, be sure to obtain the latest specifications. Dec. 2018 Revision 1.0 Version 1.0 2018 9 www.lonten.cc