HY3008P

HY3008P/M/B/ MF /PL/PM N-Channel Enhancement Mode MOSFET Feature z Pin Description 80V/100A RDS(ON)= 6.6mΩ(typ.)@VGS = 10V z z z 100% Avalanche Tested G Reliable and Rugged G Lead- Free Devices Available D D G S D S S TO-220FB-3L TO-263-2L TO-220FB-3M (RoHS Compliant) Applications z Switching application z Power management for inverter systems G G D TO-220MF-3L S G D D S S TO-3PM-3L TO-3PM-3S N-Channel MOSFET Ordering and Marking Information P M B HY3008 HY3008 HY3008 YYXXXJWW G YYXXXJWW G YYXXXJWW G MF PM PL HY3008 HY3008 HY3008 YYXXXJWW G YYXXXJWW G YYXXXJWW G Package Code P :TO-220FB-3L B:TO-263-2L PM:TO-3PM-3S M:TO-220FB-3S MF:TO-220MF-3L PL:TO-3PM-3L Date Code YYXXX WW Assembly Material G:Lead Free Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. www.hymexa.com V1.0 1 HY3008P/M/B/ MF /PL/PM Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 80 V VGSS Gate-Source Voltage ±25 V Maximum Junction Temperature -55 to 175 °C Storage Temperature Range -55 to 175 °C Tc=25°C 100 A Tc=25°C 400** A Tc=25°C 100 A Tc=100°C 70 A Tc=25°C 200 W Tc=100°C 100 W TJ TSTG IS Source Current-Continuous(Body Diode) Mounted on Large Heat Sink Note: IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RTJC Thermal Resistance, Junction-to-Case 0.75 °C/W RTJA Thermal Resistance, Junction-to-Ambient ** 62.5 °C/W EAS SinglePulsed-Avalanche Energy *** L=0.3 mH 407*** mJ * Repetitive rating˗pulse width limited by max.junction temperature. ** Surface mounted on 1in2 FR-4 board. *** Limited by TJmax , starting TJ=25°C, L = 0.3mH, RG= 25Ω, VGS =10V. Electrical Characteristics(Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HY3008 Unit Min Typ. Max 80 - - V - - 1 μA - - 50 μA Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current VGS(th) IGSS RDS(ON) VGS=0V,IDS= 250μA VDS= 80V,VGS=0V TJ=125°C Gate Threshold Voltage VDS=VGS, IDS= 250μA 2 3 4 V Gate-Source Leakage Current VGS=f25V,VDS=0V - - ±100 nA Drain-Source On-State Resistance VGS= 10V,IDS= 50A - 6.6 8.5 mΩ ISD=50A,VGS=0V - 0.8 1 V - 62 - ns - 127 - nC Diode Characteristics VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=50A,dISD/dt=100A/μs www.hymexa.com V1.0 2 HY3008P/M/B/ MF /PL/PM Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HY3008 Min Typ. Max Unit Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 1.0 - Ciss Input Capacitance VGS=0V, - 3150 - Coss Output Capacitance VDS= 25V, - 440 - Crss Reverse Transfer Capacitance Frequency=1.0MHz - 199 - td(ON) Turn-on Delay Time - 23 - Tr Turn-on Rise Time VDD= 40V,RG=3Ω, - 39 - td(OFF) Turn-off Delay Time IDS= 50A,VGS= 10V - 55 - 33 - - 67 - - 14 - - 22 - Tf Turn-off Fall Time Gate Charge Ω pF ns Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 64V, VGS= 10V, IDs= 50A nC Note: *Pulse testˈpulse width ≤ 300usˈduty cycle ≤ 2% www.hymexa.com V1.0 3 HY3008P/M/B/ MF /PL/PM Typical Operating Characteristics Figure 2: Drain Current ID-Drain Current(A) Power Dissipation (w) Figure 1: Power Dissipation Tc-Case Temperature(ć) Tc-Case Temperature(ć) Thermal Z©jc ID-Drain Current(A) Impedance Figure 4: Thermal Transient Impedance Normalized Transient Figure 3: Safe Operation Area Maximum Effective Transient Thermal Impedance, Junction-to-Case Figure 5: Output Characteristics Figure 6: Drain-Source On Resistance ID-Drain Current(A) RDS(ON)-ON-Resistance(mΩ) VDS-Drain-Source Voltage(V)  VDS-Drain-Source Voltage (V) ID-Drain Current(A) www.hymexa.com V1.0 4 HY3008P/M/B/ MF /PL/PM Typical Operating Characteristics(Cont.) Figure 8: Source-Drain Diode Forward IS-Source Current (A) Normalized On-Resistance Figure 7: On-Resistance vs. Temperature Tj-Junction Temperature (ć) VSD-Source-Drain Voltage(V) Figure 9: Capacitance Characteristics Figure 10: Gate Charge Characteristics C-Capacitance(pF) VGS-Gate-Source Voltage (V) 12 VDS-Drain-Source Voltage (V) QG-Gate Charge (Q&) www.hymexa.com V1.0 5 HY3008P/M/B/ MF /PL/PM Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com V1.0 6 HY3008P/M/B/ MF /PL/PM Device Per Unit Package Type Unit Quantity TO-220FB-3L Tube 50 Package Information TO-220FB-3L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 4.37 4.57 4.77 A1 1.25 1.30 1.45 A2 2.20 2.40 2.60 b 0.70 0.80 0.95 b2 1.17 1.27 1.47 c 0.40 0.50 0.65 D 15.10 15.60 16.10 D1 8.80 9.10 9.40 D2 5.50 - - E 9.70 10.00 10.30 E3 7.00 - - e 2.54 BSC e1 5.08 BSC H1 6.25 6.50 6.85 L 12.75 13.50 13.80 L1 - 3.10 3.40 ΦP 3.40 3.60 3.80 Q 2.60 2.80 3.00 www.hymexa.com V1.0 7 HY3008P/M/B/ MF /PL/PM Device Per Unit Package Type Unit Quantity TO-220FB-3S Tube 50 Package Information TO-220FB-3S COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 4.37 4.57 4.77 A1 1.25 1.30 1.45 A2 2.20 2.40 2.60 b 0.70 0.80 0.95 b2 1.17 1.27 1.47 c 0.40 0.50 0.65 D 15.10 15.60 16.10 D1 8.10 9.10 9.40 D2 5.50 - - E 9.70 10.00 10.30 E3 7.00 - - e 2.54 BSC e1 5.08 BSC H1 6.25 6.50 6.85 L 6.80 7.00 7.20 L1 - 3.10 3.40 ΦP 3.40 3.60 3.80 Q 2.60 2.80 3.00 www.hymexa.com V1.0 8 HY3008P/M/B/ MF /PL/PM Device Per Unit Package Type Unit Quantity TO-263-2L Reel 50 Package Information TO-263-2L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 4.37 4.57 4.77 A1 1.22 1.27 1.42 A2 2.49 2.69 2.89 A3 0 0.13 0.25 b 0.7 0.81 0.96 b1 1.17 1.27 1.47 c 0.3 0.38 0.53 D1 8.5 8.7 8.9 D4 6.6 - - E 9.86 10.16 10.36 E5 7.06 - - e 2.54 BSC H 14.7 15.1 15.5 H2 1.07 1.27 1.47 L 2 2.3 2.6 L1 1.4 1.55 1.7 L4 θ 0.25 BSC 0° 5° www.hymexa.com 9° V1.0 9 HY3008P/M/B/ MF /PL/PM Device Per Unit Package Type Unit Quantity TO-220MF-3L Tube 50 Package Information TO-220MF-3L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX E 9.96 10.16 10.36 A 4.50 4.70 4.90 A1 2.34 2.54 2.74 A2 0.30 0.45 0.60 A4 2.56 2.76 2.96 c 0.40 0.50 0.65 c1 1.20 1.30 1.35 D 15.57 15.87 16.17 H1 6.70REF e 2.54BSC L 12.68 12.98 13.28 L1 2.93 3.03 3.13 ΦP 3.03 3.18 3.38 ΦP3 3.15 3.45 3.65 F3 3.15 3.30 3.45 G3 1.25 1.35 1.55 b1 1.18 1.28 1.43 b2 0.70 0.80 0.95 www.hymexa.com V1.0 10 HY3008P/M/B/ MF /PL/PM Device Per Unit Package Type Unit Quantity TO-3PM-3L Tube 50 Package Information TO-3PM-3L www.hymexa.com V1.0 11 HY3008P/M/B/ MF /PL/PM Device Per Unit Package Type Unit Quantity TO-3PM-3S Tube 50 Package Information TO-3PM-3S www.hymexa.com V1.0 12 HY3008P/M/B/ MF /PL/PM Classification Profile Classification Reflow Profiles Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmaxto TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time (tP)** within 5°C of the specified classification temperature (Tc) Average ramp-down rate (Tpto Tsmax) Time 25°C to peak temperature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 150 °C 200 °C 60-120 seconds 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 217 °C 60-150 seconds 60-150 seconds See Classification Temp in table 1 SeeClassification Tempin table 2 20** seconds 30** seconds 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hymexa.com V1.0 13 HY3008P/M/B/ MF /PL/PM Table 1.SnPb Eutectic Process – Classification Temperatures (Tc) Package Volume mmϢ Volume mmϢ Thickness