KNP2910A

KIA 130A，100V N-CHANNEL MOSFET KNX2910A SEMICONDUCTORS 1.Applications n High efficiency synchronous rectification in SMPS n High speed power switching 2. Features n RDS(on)=5.0mΩ @VGS= 10 V n Super high dense cell design n Ultra low On-Resistance n 100% avalanche tested n Lead Free and Green devices available (RoHS Compliant) 3. Pin configuration 1 of 6 Pin Function 1 Gate 2 Drain 3 Source 4 Drain Rev 1.3 Apr. 2018 130A，100V N-CHANNEL MOSFET KIA KNX2910A SEMICONDUCTORS 4. Ordering Information Part Number Package Brand KNB2910A TO-263 KIA KNP2910A TO-220 KIA KNH2910A TO-3P KIA 5. Absolute maximum ratings Parameter Symbol (TC=25 ºC , unless otherwise specified) Ratings Units TO-220/263 TO-3P Drain-source voltage VDSS 100 V Gate-source voltage VGSS ±25 V 130 A 99 A Continuous drain currenet TC=25 ºC2 ID Continuous drain currenet TC=100 ºC2 300us pulsed drain current tested TC=25 ºC1 IDP 560 A Avalanche energy single pulse3 EAS 552 mJ Power dissipation TC=25 ºC PD TC=100 ºC 300 375 W 150 187.5 W TJ 175 °C TSTG -55~+175 °C IS 140 A Symbol Rating Unit Thermal resistance,Junction-to-case θJC 0.5 ºC/W Thermal resistance,Junction-to-ambient θJA 62.5 ºC/W Maximum junction temperature Storage temperature range Diode continuous forward current TC=25 ºC 6. Thermal characteristics Parameter 2 of 6 Rev 1.3 Apr. 2018 KIA 130A，100V N-CHANNEL MOSFET KNX2910A SEMICONDUCTORS 7. Electrical characteristics Parameter Off Characteristics Drain-source breakdown voltage Symbol Drain-to-source leakage current IDSS Gate-to-source leakage current IGSS On characteristics Gate threshold voltage Static drain-source on-resistance4 Gate charge characteristics5 Total gate charge Gate-source charge Gate-drain (Miller)charge Dynamic characteristics5 Gate series resistance Turn-on delay time Rise time Turn-off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Source-drain body diode characteristics Diode forward voltage4 Reverse recovery time Reverse recovery charge (TC=25°C,unless otherwise notes) Conditions Min Typ Max Unit BVDSS VGS=0V,ID=250μA VDS=100V ,VGS=0V TJ=125 ºC VGS=25V,VDS=0V VGS=-25V,VDS=0V 100 - - 1 30 100 -100 V μA μA nA nA VGS(th) RDS(on) VDS=VGS, ID=250μA VGS=10V,ID=40A 2.0 - 5.0 4.0 7.0 V mΩ Qg Qgs Qgd VDS=80V,ID=70A,VGS=10V - 130 32 55 - nC - 1 24 91 75 65 6800 630 350 - - 43 67 1.2 - RG VDS=0V,VGS=0V,f=1.0MHz Td(ON) trise VDD=50V,ID=70A,VGEN=10V, RG=5Ω Td(OFF) tfall Ciss Coss VDS=50V,VGS=0V,f=1.0MHz Crss TJ=25°C,unless otherwise notes VSD VGS=0V,IS=70A trr ISD=70A,diF/dt=100A/μs, Qrr Ω nS pF V ns nC Note: 1. Pulse width limited by safe operating area. 2. Caiculated continuous current based on maximum allowable junction temperature. The package limitation current is 75A 3. Limited by TJmax, IAS=47A, VDD=48V, RG=50Ω, Starting TJ=25°C. 4. Pulse test; Pulse width