GT68N12T

GOFORD GT68N12 Description GT68N12 use advanced technology to provide low VDSS R DS(ON), low gate charge, fast switching and e xc e lle nt avalan ch e characteristics. Thi s device is specially designed to get better ruggedness and suitable to use in motor control applications. RDS(ON) @10V (typ) ID 5 mΩ 120V 110A General Features ● Low RDS(on) & FOM ● Extremely low switching loss ● Excellent stability and uniformity ● Fast switching and soft recovery ● RoHS Compliant Schematic diagram Application ● Consumer electronic power supply ● Motor control ● Synchronous-rectification ● Isolated DC/DC convertor TO-263 ● Invertors Ordering Information Part Number Marking Case Packaging GT68N12M GT68N12 TO-263 50pcs/Tube GT68N12T GT68N12 TO-220 50pcs/Tube  Absolute Maximum Ratings at Tj=25℃ unless otherwise noted Parameter Symbol Value Unit Drain source voltage VDS 120 V Gate source voltage VGS ±20 V ID 110 A ID, pulse 330 A Power dissipation3), TC=25 ℃ PD 192 W Single pulsed avalanche energy5) EAS 400 mJ Tstg，Tj -55 to 150 ℃ Continuous drain current1), TC=25 ℃ Pulsed drain current2), TC=25 ℃ Operation and storage temperature HTTP://www.gofordsemi.com TEL:0755-29961262 FAX:0755-29961466 Page 1 (VD) GOFORD  GT68N12 Thermal Characteristics Parameter Symbol Value Unit Thermal resistance, junction-case RθJC 0.65 ℃/W Thermal resistance, junction-ambient4) RθJA 62 ℃/W  Electrical Characteristics at Tj=25 ℃ unless otherwise specified Parameter  Symbol Min. Drain-source breakdown voltage BVDSS 120 Gate threshold voltage VGS(th) 2.0 Drain-source on-state resistance RDS(ON) Gate-source leakage current IGSS Drain-source leakage current IDSS Typ. 5.0 Max. Unit Test condition V VGS=0 V, ID=250 μA 4.0 V VDS=VGS, ID=250 μA 6.5 mΩ 100 -100 nA VGS=10 V, ID=30 A VGS=20 V VGS=-20 V 1 μA VDS=120 V, VGS=0 V Max. Unit Test condition Dynamic Characteristics Parameter Symbol Min. Typ. Input capacitance Ciss 5823.0 pF Output capacitance Coss 778.8 pF Reverse transfer capacitance Crss 17.5 pF Turn-on delay time td(on) 30.3 ns tr 33.0 ns VDS=50 V, td(off) 59.5 ns RG=2 Ω, tf 11.7 ns Rise time Turn-off delay time Fall time VGS=0 V, VDS=50 V, ƒ=100 kHz VGS=10 V, ID=25 A  Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Total gate charge Qg 68.9 nC Gate-source charge Qgs 18.1 nC Gate-drain charge Qgd 15.9 nC Vplateau 4.8 V Gate plateau voltage HTTP://www.gofordsemi.com TEL:0755-29961262 FAX:0755-29961466 Test condition ID=25 A, VDS=50 V, VGS=10 V Page 2 (VD) GOFORD  GT68N12 Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit Diode forward current IS 110 Pulsed source current ISP 330 Diode forward voltage VSD 1.3 Reverse recovery time trr 85.0 ns Reverse recovery charge Qrr 240.0 nC Peak reverse recovery current Irrm 4.6 A Test condition A VGS