WSR60N06D

WSR60N06D N-Ch MOSFET General Description Product Summery BVDSS The WSR60N06D uses advanced trench technology and design to provide excellent RDS(ON) with low 60V gate charge. It can be used in a wide variety of RDSON ID 13.5mΩ 60A applications. Application ● Power switching application ● LED backlighting ● Uninterruptible power supply Features ● High density cell design for ultra low Rdson TO-220AB Pin Configuration ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS PD@TC=25℃ TJ TSTG Rating Units Drain-Source Voltage 60 V Gate-Source Voltage ±20 V 60 A 1 Continuous Drain Current, VGS @ 10V 1 41 A 120 A 390 mJ Total Power Dissipation 89 W Operating Junction Temperature Range -55 to 150 ℃ Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 Single Pulse Avalanche Energy 4 Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case1 www.winsok.tw Page 1 1 Max. Unit --- 62 ℃/W --- 1.68 ℃/W Rev 1: Fed.2022 WSR60N06D N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit 60 --- --- V Reference to 25℃ , ID=1mA --- 0.057 --- V/℃ VGS=10V , ID=20A --- 13.5 20 VGS=4.5V , ID=10A --- 19 30 = VGS=0V , ID 250uA mΩ 1.2 1.8 2.5 V --- -5.68 --- mV/℃ VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=20A --- 25 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 --- Ω Qg Total Gate Charge (4.5V) --- 19.3 --- Qgs Gate-Source Charge --- 7.1 --- Qgd Gate-Drain Charge --- 7.6 --- --- 7.2 --- --- 50 --- Turn-Off Delay Time --- 36.4 --- Fall Time --- 7.6 --- Ciss Input Capacitance --- 2426 --- Coss Output Capacitance --- 145 --- Crss Reverse Transfer Capacitance --- 97 --- Min. Typ. Max. Unit --- --- 35 A --- --- 90 A --- --- 1.2 V --- 16.3 --- nS --- 11 --- nC △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Td(on) Tr Td(off) Tf VGS=VDS , ID =250uA VDS=30V , VGS=4.5V , ID=15A Turn-On Delay Time VDS=30V , VGS=10V , ID=15A ， R=3.3Ω. Rise Time VDS=15V , VGS=0V , f=1MHz uA nC ns pF Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=1A ,dI/dt=100A/µs,TJ=25℃ Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition: Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω www.winsok.tw Page 2 Rev 1: Fed.2022 WSR60N06D N-Ch MOSFET Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs Gate-Source Voltage 12 IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 VSD , Source-to-Drain Voltage (V) 1 Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance Normalized VGS(th) 1.5 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 Fig.5 Normalized VGS(th) vs TJ www.winsok.tw 0 50 100 TJ , Junction Temperature (℃) 150 Fig.6 Normalized RDSON vs TJ Page 3 Rev 1: Fed.2022 WSR60N06D N-Ch MOSFET Capacitance (pF) 10000 F=1.0MHz Ciss 1000 Coss 100 Crss 10 1 5 9 13 17 VDS Drain to Source Voltage(V) 21 25 Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 PDM 0.02 0.01 0.01 0.00001 TON D = TON/T TJpeak = TC + PDM x RθJC SINGLE PULSE 0.0001 T 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% 10% VGS Td(on) Tr Ton Td(off) BVDSS BVDSS-VDD VDD IAS Tf Toff Fig.10 Switching Time Waveform www.winsok.tw BVDSS 1 L x IAS2 x 2 VGS Fig.11 Unclamped Inductive Switching Waveform Page 4 Rev 1: Fed.2022 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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