AP120N06P

AP120N06PIT 65V N-Channel Enhancement Mode MOSFET Description The AP120N06P/T uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 65V ID =125A RDS(ON) < 5.6mΩ @ VGS=10V （Type：4.8mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP120N06P TO-220-3L AP120N06P XXX YYYY 1000 AP120N06T TO-263-3L AP120N06T XXX YYYY 800 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Value Unit VDS Drain source voltage 65 V VGS Gate source voltage ±25 V ID Continuous drain current1) 125 A IDM Pulsed drain current2) 492 A IAS Diode forward current 55 A PD Power dissipation 172 W EAS Single pulsed avalanche energy) 225 mJ Tstg，Tj Operation and storage temperature -55 to 150 ℃ RθJC Thermal resistance, junction-case 1.4 ℃/W RθJA Thermal resistance, junction-ambient4) 62.5 ℃/W 1 AP120N06P/T RVE1.0 永源微電子科技有限公司 AP120N06PIT 65V N-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Test Condition V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 65 72 - V IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V, - - 1.0 μA IGSS Gate to Body Leakage Current VDS=0V, VGS=±20V - - ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 2.0 2.8 4.0 V RDS(on) Static Drain-Source on-Resistance note VGS=10V, ID=55A - 4.8 5.6 mΩ Ciss Input Capacitance - 3135 - pF Coss Output Capacitance - 521 - pF Crss Reverse Transfer Capacitance - 306 - pF Qg Total Gate Charge - 77 - nC - 18 - nC VDS=30V, VGS=0V, f=1.0MHz VDS=30V, ID=55A, VGS=10V Min. Typ. Max. Units Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge - 30 - nC td(on) Turn-on Delay Time - 15 - ns tr Turn-on Rise Time - 89 - ns td(off) Turn-off Delay Time - 36 - ns tf Turn-off Fall Time - 91 - ns - - 123 A - - 492 A - - 1.2 V - 32 - ns - 31 - nC IS Maximum Continuous Drain to Source Diode ForwardCurrent ISM VSD trr Qrr VDS=30V, ID=55A, RG=1.8Ω, VGS=10V Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage VGS=0V, IS=30A Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=550A, dI/dt=100A/μs Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width .The EAS data shows Max. rating . 3、The test cond≦ 300us duty cycle ≦ 2%, duty cycle ition is TJ =25℃, VDD =35V, VG =10V, R G =25Ω, L=0.5mH, IAS =55A 4、The power dissipation is limited by 175℃ junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 AP120N06P/T RVE1.0 永源微電子科技有限公司 AP120N06PIT 60V N-Channel Enhancement Mode MOSFET Electrical Characteristics Diagrams Figure1: Output Characteristics Figure 3: Rds(on) vs Drain Current and AP120N06P/T RVE1.0 Figure 4: Rds(on) vs Gate Voltage Figure 6: Capacitance Characteristics 永源微電子科技有限公司 3 Figure 5: Rds(on) vs. Temperature Figure 2: Typical Transfer Characteristics AP120N06PIT 65V N-Channel Enhancement Mode MOSFET Figure 7: Gate Charge Characteristics Figure 9: Power Dissipation Figure 8: Body-diode Forward Characteristics Figure 10: Drain Current Derating Figure.11: Safe Operating Area 4 AP120N06P/T RVE1.0 永源微電子科技有限公司 AP120N06PIT 60V N-Channel Enhancement Mode MOSFET Package Mechanical Data-TO-220-3L-SLK Symbol A A1 A2 b b2 D D1 D2 E E1 E2 E3 e e1 H1 L L1 Φp Q θ1 θ2 F F1 F2 Mim 4.27 1.15 2.10 0.70 1.17 0.40 8.80 5.70 9.70 9.63 7.00 6.00 12.75 3.45 2.60 4° 0° 13.30 15.50 2.80 Common mm Nom 4.57 1.30 2.40 0.80 1.27 0.50 9.10 6.70 10.00 8.70 10.00 8.00 0.37 0.10 6.50 13.50 3.10 3.60 2.80 7° 3° 13.50 15.90 3.00 Max 4.87 1.45 2.70 1.00 1.50 0.65 9.40 7.00 10.30 10.35 8.40 6.85 13.90 3.40 3.75 3.00 10° 6° 13.70 16.30 3.20 5 AP120N06P/T RVE1.0 永源微電子科技有限公司 AP120N06PIT 65V N-Channel Enhancement Mode MOSFET Package Mechanical Data-TO-263-3L-SLK Symbol A A1 A2 b b2 C C1 D D1 E E1 H e L L1 L2 R θ Θ1 Θ2 Mim 4.35 0.09 2.30 0.70 1.25 0.45 1.29 9.10 7.90 9.85 7.90 15.30 2.34 1.00 1.30 0.24 0° 4° 0° Common mm Nom 4.47 0.10 2.40 0.80 1.36 0.50 1.30 9.20 8.00 10.00 8.00 15.50 2.54 2.54 1.10 1.40 0.25 4° 7° 3° Max 4.60 0.11 2.70 1.00 1.50 0.65 9.40 9.30 8.10 10.20 8.10 15.70 2.74 1.20 1.50 0.26 8° 10° 6° 6 AP120N06P/T RVE1.0 永源微電子科技有限公司 AP120N06PIT 60V N-Channel Enhancement Mode MOSFET Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use. 7 AP120N06P/T RVE1.0 永源微電子科技有限公司 AP120N06PIT 65V N-Channel Enhancement Mode MOSFET Edition Date Change Rve1.0 2021/12/14 Initial release Copyright Attribution“APM-Microelectronice” 8 AP120N06P/T RVE1.0 永源微電子科技有限公司