HD30N06(AEE)

BVDSS = 60 V RDS(on) = 32 mΩ HD30N06 / HU30N06 ID = 30 A 60V N-Channel MOSFET TO-252 TO-251 FEATURES  Originative New Design HD30N06  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HU30N06 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 40 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.032 Ω (Typ.) @V GS=10V  100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 60 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 30 A Drain Current – Continuous (TC = 100℃) 20 A IDM Drain Current – Pulsed 30 A VGS Gate-Source Voltage ±20 V EAS Single Pulsed Avalanche Energy (Note 2) 25 mJ IAR Avalanche Current (Note 1) 50 A EAR Repetitive Avalanche Energy (Note 1) 25 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns PD Power Dissipation (TA = 25℃)* 3.75 W Power Dissipation (TC = 25℃) - Derate above 25℃ 23 W 0.8 W/℃ -55 to +150 ℃ 300 ℃ (Note 1) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Typ. Max. RθJC Symbol Junction-to-Case Parameter -- 1.0 RθJA Junction-to-Ambient* -- 40 RθJA Junction-to-Ambient -- 62.5 * When mounted on the minimum pad size recommended (PCB Mount) Units ℃/W HD30N06_HU30N06 Nov 2019 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units 2.3 3.0 V On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 1.0 Static Drain-Source On-Resistance VGS = 10 V, ID = 12 A -- 0.032 0.040 Ω VGS = 0 V, ID = 250 ㎂ 60 -- 70 V ID = 250 ㎂, Referenced to25℃ -- 0.06 -- V/℃ VDS = 60 V, VGS = 0 V -- -- 1 ㎂ VDS = 48 V, TC = 150℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature /ΔTJ Coefficient IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 ㎁ -- 778 ㎊ -- 60 ㎊ -- 41 ㎊ -- 4.2 ㎱ -- 3.4 220 ㎱ -- 16 130 ㎱ -- 2 140 ㎱ -- 13.5 -- 3.2 -- nC -- 6.2 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 30 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 30 V, ID = 30 A, RG = 25 Ω (Note 4,5) VDS = 30 V, ID = 30 A, VGS = 10 V (Note 4,5) Gate-Drain Charge nC Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 30 ISM Pulsed Source-Drain Diode Forward Current -- -- 60 VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V -- -- 0.99 V trr Reverse Recovery Time -- 27 -- ㎱ Qrr Reverse Recovery Charge IS = 30 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 30 -- μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=230μH, IAS=15A, VDD=25V, RG=25, Starting TJ =25C 3. ISD≤50A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature A HD30N06_HU30N06 Electrical Characteristics TC=25 C TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Figure 2: Transfer Characteristics 35 30 30 25 ID-Drain Current (A) ID-Drain Current (A) Figure1. On-Region Characteristics 25 20 15 20 15 10 10 5 5 VGS Gate-Source Voltage (V) VDS Drain-Source Voltage (V) Figure3. ID vs Junction Temperature ID-Drain Current(A) Normalized On-Resistance Figure4. On-Resistance vs. Junction Temperature VGS=10V ID=15A Temperature (°C) TJ-Junction Temperature(℃) Figure5. On-Resistance vs. Gate-Source Voltage Figure6. Body-Diode Characteristics ID=15A 100 80 60 40 Is-Reverse Drain Current (A) RDS(ON) On-Resistance (mΩ) 120 20 VGS Gate-Source Voltage (V) VSD Source-Drain Voltage (V) Figure 8. Capacitance Characteristics ID=15A C Capacitance (pF) VGS Gate-Source Voltage (V) Figure7. Gate-Charge Characteristics Qg Gate Charge (nC) VDS Drain-Source Voltage (V) Figure10. Single Pulse Power Rating Junction-to-Cas Power (W) ID-Drain Current (A) Figure 9. Maximum Forward Biased Safe Operating Area VDS Drain-Source Voltage (V) Pulse Width (s) R(t), Normalized Effective Transient Thermal Impedance Figure11. Normalized Maximum Transient Thermal Impedance Square Wave Pluse Duration(sec) HD30N06_HU30N06 Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time HD30N06_HU30N06 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD HD30N06_HU30N06 Package Dimension TOTO -252 2.3±0.1 6.6±0.2 1.2±0.3 9.7+0.5 -0.3 2.7±0.3 0.5±0.05 5.6±0.2 1±0.2 5.35±0.15 1.2±0.3 0.05+0.1 -0.05 0.8±0.2 0.6±0.2 2.3typ 2 3typ 2.3typ 0.5+0.1 -0.05 HD30N06_HU30N06 Package Dimension TOTO -251 6.6±0.2 2.3±0.1 0.8±0.15 0.6±0.1 2.3typ 2 3typ 2.3typ ±0.4 ± 7.8±0 0.3 7.5 0.75±0.15 7±0.2 0.5±0.05 5.6±0.2 5.35±0.15 0.5+0.1 -0.05 1.2±0.3