HT03AM-12

HT03AM-12 Thyristor Low Power Use Features  IT (AV) : 0.3 A  VDRM : 600 V  IGT : 100 A  Non-Insulated Type  Glass Passivation Type Outline PRSS0003EA-A (Package name:TO-92) 2 1. Cathode 2. Anode 3. Gate 3 1 3 2 1 Applications Leakage protector, timer, and gas igniter Maximum Ratings Parameter Symbol Voltage class Unit Repetitive peak reverse voltage VRRM 12 600 Non-repetitive peak reverse voltage DC reverse voltage Note1 Repetitive peak off-state voltage Note1 Non-repetitive peak off-state voltage VRSM VR(DC) 800 480 V V VDRM VDSM 600 800 V V VD(DC) 480 V DC off-state voltage Note1 V Rev. 00 HT03AM-12 Parameter Symbol Ratings Unit IT (RMS) IT (AV) 0.47 0.3 A A ITSM 20 A It 2 1.6 As Peak gate power dissipation Average gate power dissipation PGM PG (AV) 0.5 0.1 W W Peak gate forward voltage Peak gate reverse voltage VFGM VRGM 6 6 V V Peak gate forward current Junction temperature IFGM Tj 0.3 – 40 to +110 A °C Storage temperature Mass Tstg — – 40 to +125 0.23 °C g RMS on-state current Average on-state current Surge on-state current 2 I t for fusing 2 Conditions Commercial frequency, sine half wave 180°conduction, Ta = 47°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. With gate to cathode resistance RGK = 1 k. Electrical Characteristics Symbol Min. Typ. Max. Unit Repetitive peak reverse current Repetitive peak off-state current Parameter IRRM IDRM — — — — 0.1 0.1 mA mA Test conditions On-state voltage VTM — — 1.8 V Ta = 25°C, ITM = 4 A, instantaneous value Gate trigger voltage VGT — — 0.8 V Gate non-trigger voltage VGD 0.2 — — V Tj = 25°C, VD = 6 V, Note3 IT = 0.1 A Tj = 110°C, VD = 1/2 VDRM, RGK = 1 k Gate trigger current IGT 1 — 100Note2 A Holding current IH — 1.5 3 mA Tj = 110°C, VRRM applied Tj = 110°C, VDRM applied, RGK = 1 k Tj = 25°C, VD = 6 V, Note3 IT = 0.1 A Tj = 25°C, VD = 12 V, RGK = 1 k Thermal resistance Rth (j-a) — — 180 °C/W Junction to ambient Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible. A B C D Item E IGT (A) 1 to 30 20 to 50 40 to 100 1 to 50 20 to 100 The above values do not include the current flowing through the 1 k resistance between the gate and cathode. 3 IGT, VGT measurement circuit. A 3V DC GS GT A3 RGK 1k Switch A2 2 60 TUT V 6V DC VGT Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1k) Rev. 00 HT03AM-12 Performance Curves 101 7 5 3 2 Rated Surge On-State Current 20 Ta = 25°C Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics 100 7 5 3 2 10–1 7 5 3 2 10–2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 100 7 5 3 2 10–1 7 5 3 10–22 VFGM = 6V PG(AV) = 0.1W VGT = 0.8V (Tj = 25°C) IGT = 100A (Tj = 25°C) VGD = 0.2V 0 IFGM = 0.3A 1 2 5 710 2 3 5710 23 5 710 23 5 710 2 3 5 Gate Trigger Voltage (V) 6 4 2 0 0 10 1 2 2 3 4 5 7 10 2 3 4 5 7 10 103 7 5 3 2 Typical Example 102 7 5 3 2 101 7 5 3 2 100 –40 –20 0 20 40 60 80 100 120 Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 0.9 Distribution 0.7 0.6 8 Gate Current (mA) 1.0 0.8 10 Gate Trigger Current vs. Junction Temperature PGM = 0.5W –1 12 Gate Characteristics Gate Trigger Current (Tj = t°C)  100 (%) Gate Trigger Current (Tj = 25°C) 7 5 3 2 14 Conduction Time (Cycles at 60Hz) Typical Example IGT (25C) = 35A 0.5 0.4 0.3 0.2 0.1 0 –60 –40 –20 0 20 40 60 80 100 120140 Junction Temperature (°C) Transient Thermal Impedance (°C/W) Gate Voltage (V) 101 16 On-State Voltage (V) 102 7 5 3 2 18 100 2 3 57 101 2 3 5 7 102 2 3 5 7 103 200 180 160 140 120 100 80 60 40 20 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 Time (s) Rev. 00 HT03AM-12 Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 160 0.3 0.2 0 0.1 0.2 140  360° 120 Resistive, inductive loads Natural convection 100 80 60 40  = 30 90 180 60 120 20 0 0 0.1 0.2 0.3 0.4 0.5 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation  (Single-Phase Full Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 90 60   = 30 0.4 120 160 Ambient Temperature (°C) 0.5 Average Power Dissipation (W)  360° Resistive, inductive loads 0.4 0.5 0.3 0.1 0 180 0.3 0.2   360° 0.1 0 0 0.1 0.2 Re sisti ve loads 0.3 0.5 0.4 140   360° 120 Resistive loads Natural convection 100 80 60 40 20  = 30 60 90 120 180 0 0 0.1 0.2 0.3 0.4 0.5 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) 0.5 Average Power Dissipation (W) Ambient Temperature (°C) 180 120 90 60  = 30 0.4 0.4  = 30 270 120180 90 DC 60 0.3 0.2  360° 0.1 0 Resistive, inductive loads 0 0.1 0.2 0.3 0.4 Average On-State Current (A) 0.5  160 140 Ambient Temperature (°C) Average Power Dissipation (W) 0.5 Resistive, inductive loads Natural convection  360° 120  = 30° 60° 100 90° 120° 180° 270° DC 80 60 40 20 0 0 0.1 0.2 0.3 0.4 0.5 Average On-State Current (A) Rev. 00 HT03AM-12  100 (%) RGK = 1k Typical Example 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 160 Typical Example Tj = 110C 140 120 100 80 60 40 20 0 10–1 2 3 57 100 2 3 5 7 101 2 3 5 7 102 Gate to Cathode Resistance (k) Breakover Voltage vs. Rate of Rise of Off-State Voltage Holding Current vs. Junction Temperature RGK = 1k 180 Holding Current (mA) 160 140 120 100 Tj = 25C 80 60 Tj = 110C 40 0 10 Breakover Voltage vs. Gate to Cathode Resistance Junction Temperature (°C) 200 20 0 Breakover Voltage (RGK = rk) Breakover Voltage (RGK = 1k) 160 1 2 102 7 5 3 2 101 7 5 3 2 RGK = 1k  Distribution Typical Example IGT (25C) = 35A 100 7 5 3 2 10–1 –60 –40 –20 0 20 40 60 80 100 120 140 3 2 3 57 10 2 3 5 7 10 2 3 5 7 10 Rate of Rise of Off-State Voltage (V/s) Junction Temperature (°C) Holding Current vs. Gate to Cathode Resistance Repetitive Peak Reverse Voltage vs. Junction Temperature 500 400 300 Typical Example IGT(25°C) IH(1k) # 1 10A 1.0mA # 2 26A 1.1mA #1 #2 200 100 VD = 12V, Tj = 25°C 0 10–2 2 3 5 710–1 2 3 57 100 2 3 5 7 101 Gate to Cathode Resistance (k) Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C)  100 (%) Holding Current (RGK = rk) Holding Current (RGK = 1k)  100 (%) Breakover Voltage (dv/dt = vV/s)  100 (%) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C)  100 (%) Breakover Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 Junction Temperature (°C) Rev. 00 HT03AM-12 Gate Trigger Current (A) Gate Trigger Current vs. Gate Current Pulse Width 104 7 5 4 3 2 Typical Example IGT(DC) # 1 16A # 2 65A #1 103 7 5 4 3 2 #2 Tj = 25°C 102100 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Gate Current Pulse Width (s) Rev. 00 HT03AM-12 Package Dimensions Package Name MASS[Typ.] TO-92 Unit: mm 0.23g 5.0Max 4.4 5.0Max PRSS0003EA-A 11.5Min RENESAS Code 1.25 1.25 Circumscribed circle 0.7 1.1 SC-43A 3.6 JEITA Package Code Rev. 00