PTD7N65

PTD7 N65 65 0V/7 A N-Channel A dv anced Power MOSFET Features ■ RDS(on) (Typical 1.0 Ω )@VGS=10V ■ Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ TO‐252  Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Symbol Parameter Rating Unit Common Ratings (T J =25°C Unless Otherwise Noted) VGS Gate-Source Voltage ±30 V V(BR)DSS Drain-Source Breakdown Voltage 650 V TJ Maximum Junction Temperature -50 to 150 °C TSTG Storage Temperature Range --50 to 150 °C IS Diode Continuous Forward Current 7 A 28 A 7 A 90 W 385 mJ 1.39 °C/W 62 °C/W Mounted on Large Heat Sink (TJ =25°C Unless Otherwise Noted) IDM Pulse Drain Current Tested (Sillicon Limit) ID Continuous Drain current@VGS=10 V PD Maximum Power Dissipation EAS Sing Pulsed Avalanche Energy R JC Thermal Resistance Junction−to−Case R JA Thermal Resistance Junction−to−Ambient (Note1) TC =25°C (Note2) Note : 1. Repetitive Rating:Pulse width limited by maximum junction temperature. 2. IL=15.7mH,IAS=7 A,VDD=50V,RG=25 Ω,Tj=25 °C - 1- 2018-8-22 PTD7 N65 65 0V/7 A N-Channel A dv anced Power MOSFET Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 650 -- -- V IDSS Zero Gate Voltage Drain current(Tc=25℃) VDS=650V,VGS=0V -- -- 1 μA IGSS Gate-Body Leakage Current VGS=±30V,VDS=0V -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250μA 2 3 4 V RDS(ON) Drain-Source On-State Resistance note A VGS=10V,ID=3.5A -- 1.0 1.3 Ω -- 930 -- pF -- 100 -- pF Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) note B Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance -- 4.5 -- pF Qg Total Gate Charge -- 16 -- nC Qgs Gate-Source Charge -- 4 -- nC Qgd Gate-Drain Charge -- 3.6 -- nC -- 26 -- nS VDS=25 V,VGS=0V, f=1MHz VDS=520V,ID=7A Switching Characteristics VGS=10V note B t d(on) Turn-on Delay Time tr Turn-on Rise Time ID=7A, -- 17 -- nS t d(off) Turn-Off Delay Time RG=25Ω -- 57 -- nS tf Turn-Off Fall Time -- 23 -- nS 1.4 V VDS= 300V VGS=10V Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated) VSD Forward on voltage IS= 5 A,VGS=0V -- 0.85 Note: A: Pulse Test: pulse width ≤ 300 us, duty cycle ≤ 2% B:Guranteed by design, not subject to production testing. - 2- 2018-8-22 PTD7 N65 65 0V/7 A N-Channel A dv anced Power MOSFET Typical characteristic curve: - 3- 2018-8-22 PTD7 N65 65 0V/7 A N-Channel A dv anced Power MOSFET - 4- 2018-8-22 PTD7 N65 65 0V/7 A N-Channel A dv anced Power MOSFET Test Circuit and Waveform Gate Charge Test Circuit and Waveform Switching time test circuit and waveform Reverse Recovery Test Circuit and Waveform Avalanche Test Circuit and Waveform 5 / 10 PowerCore 5 / - 5- 2018-8-22 2017-8-22