HY1506D

HY1506D/U/V N-Channel Enhancement Mode MOSFET Features • Pin Description 60V/55A, RDS(ON)=10.5 m(typ.) @ VGS=10V • Avalanche Rated • • Reliable and Rugged Lead Free and Green Devices Available G D S G (RoHS Compliant) G TO-252-2L D S D S TO-251-3L TO-251-3S Applications  Power Management for Inverter Systems. N-Channel MOSFET Ordering and Marking Information Package Code D HY1506 U HY1506 V HY1506 YYXXXJWW G YYXXXJWW G YYXXXJWW G D : TO-252-2L V : TO-251-3S U : TO-251-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the leadFree requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-oduct and/or to this document at any time without notice. www.hymexa.com V1.1 1 HY1506D/U/V Absolute Maximum Ratings Symbol Parameter Unit Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 55 A TC=25°C 220** A TC=25°C 55 TC=100°C 38 TC=25°C 100 TC=100°C 50 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation A W RJC Thermal Resistance-Junction to Case 1.5 °C/W RJA Thermal Resistance-Junction to Ambient 110 °C/W EAS Drain-Source Avalanche Energy L=0.5mH 200*** mJ Note： * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=48V Electrical Characteristics Symbol Parameter (TC = 25C Unless Otherwise Noted) Test Conditions HY1506 Min. Typ. Max. 60 65 - - - 1 - - 30 Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS VGS=0V, IDS=250A VDS=60V, VGS=0V TJ=85°C V A Gate Threshold Voltage VDS=VGS, IDS=250A 1.0 1.6 3.0 V Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA VGS=10V, IDS=28A - 10.5 13.5 m 13.5 15 m - 0.8 1.1 V - 50 - ns - 74 - nC RDS(ON) * Drain-Source On-state Resistance VGS=4.5V, I DS=28A Diode Characteristics VSD * Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=28A, VGS=0V IDS=28A, dlSD/dt=100A/s www.hymexa.com V1.1 2 HY1506D/U/V Electrical Characteristics (Cont.) Symbol (TC = 25C Unless Otherwise Noted) Test Conditions Parameter HY1506 Min. Typ. Max. - 1.2 - - 3522 - - 666 - - 172 - - 21 39 - 25 48 - 27 52 - 31 58 - 62 - - 6 - - 11 - Unit Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=30V, RG = 4 , IDS =28A, VGS =10V, Turn-off Fall Time  pF ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=48V, VGS=10V, IDS=28A nC Note * : Pulse test ; pulse width 300s, duty cycle2%. . www.hymexa.com V1.1 3 HY1506D/U/V Typical Operating Characteristics Power Dissipation Drain Current 120 100 ID - Drain Current (A) Ptot - Power (W) 100 80 60 40 20 60 40 20 0 o 0 o TC=25 C 0 20 TC=25 C,VG=10V 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Safe Operation Area Rd s(o n) Lim it ID - Drain Current (A) 400 100 100us 1ms 10 10ms DC 1 o TC=25 C 0.1 0.1 1 10 100 400 VDS - Drain - Source Voltage (V) Thermal Transient Impedance Normalized Effective Transient 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 Mounted on minimum pad o RJA : 62.5 C/W Single 0.0001 0.001 0.1 0.01 1 10 Square Wave Pulse Duration (sec) www.hymexa.com V1.1 4 HY1506D/U/V Typical Operating Characteristics (Cont.) Output Characteristics 160 17 VGS= 7,8,9,10V 120 RDS(ON) - On - Resistance (m) ID - Drain Current (A) 140 6V 100 80 5.5V 60 40 5V 20 4.5V 0 16 15 VGS=4.5V 14 13 12 VGS=10V 11 10 4V 0 1 2 3 4 9 5 0 10 20 ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 1.8 50 IDS =250A IDS=28A 1.6 18 Normalized Threshold Vlotage RDS(ON) - On - Resistance (m) 40 VDS - Drain-Source Voltage (V) 20 16 14 12 10 8 6 30 1.4 1.2 1.0 0.8 0.6 0.4 0.2 4 5 6 7 8 9 0.0 -50 -25 10 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) VGS - Gate - Source Voltage (V) www.hymexa.com V1.1 5 HY1506D/U/V Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 160 2.2 VGS = 10V IDS = 28A 1.8 IS - Source Current (A) Normalized On Resistance 2.0 100 1.6 1.4 1.2 1.0 0.8 o Tj=175 C 10 o Tj=25 C 1 0.6 0.4 o 0.2 -50 -25 RON@T =25 C:10.5m j 0 25 50 0.1 0.0 75 100 125 150 175 1.2 Capacitance Gate Charge 1.5 10 VDS= 48V 9 VGS - Gate-source Voltage (V) 4500 Ciss 4000 C - Capacitance (pF) 0.9 VSD - Source-Drain Voltage (V) Frequency=1MHz 3500 3000 2500 2000 1500 Coss 1000 0 0 0.6 Tj - Junction Temperature (°C) 5000 500 0.3 Crss 5 IDS= 28A 8 7 6 5 4 3 2 1 10 15 20 25 30 35 0 40 VDS - Drain - Source Voltage (V) 0 10 20 30 40 50 60 70 QG - Gate Charge (nC) www.hymexa.com V1.1 6 HY1506D/U/V Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com V1.1 7 HY1506D/U/V Device Per Unit Package Type Unit Quantity TO-252-2L TO-252-2L TO-251-3L TO-251-3S Tube 75 Reel Tube Tube 2500 75 75 Package Information TO-252-2L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 2.20 2.30 2.40 A1 0.00 - 0.20 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 6.60 6.80 E1 4.63 - - e www.hymexa.com 2.286BSC H 9.40 10.10 10.50 L 1.38 1.50 1.75 L1 2.90REF L2 0.51BSC L3 0.88 - 1.28 L4 - - 1.00 L5 1.65 1.80 1.95 θ 0° - 8° V1.1 8 HY1506D/U/S TO-251-3L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 2.20 2.30 2.40 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b2 0.00 0.04 0.10 b2' 0.00 0.04 0.10 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 6.60 6.80 E1 4.63 - - e 2.286BSC H 16.22 16.52 16.82 L1 9.15 9.40 9.65 L3 0.88 1.02 1.28 L5 1.65 1.80 1.95 www.hymexa.com V1.1 9 HY1506D/U/S TO-251-3S COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 2.20 2.30 2.40 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 6.60 6.80 E1 4.63 - - e 2.286BSC H 10.00 11.22 11.44 L1 3.90 4.10 4.30 L3 0.88 1.02 1.28 L5 1.65 1.80 1.95 www.hymexa.com V1.1 10 HY1506D/U/S Classification Profile Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 C 150 C 60-120 seconds 150 C 200 C 60-120 seconds 3 C/second max. 3C/second max. 183 C 60-150 seconds 217 C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 C/second max. 6 C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hymexa.com V1.1 11 HY1506D/U/S Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Thickness