G8N03

GOFORD G8N03 Features • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • • Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-CHANNEL MOSFET Maximum Ratings • Operating Junction Temperature Range : -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Maximum Thermal Resistance: 78°C/W Junction to Case(Note1) Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Volltage VGS ±20 V 8 A 5.6 A IDM 32 A PD 1.6 W Continuous Drain Current Pulsed Drain Current (Note2) Total Power Dissipation TC=25°C TC=100°C ID SOT23-6L G 6 4 B 1 2 C 3 A Note 1. Surface Mounted on FR4 Board, t < 10 sec. 2. Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature. 5 H M K J D Internal Structure D 6 D 5 1 2 D DIM S 4 A B C D G H J K L M 3 D G Marking:8N03 www.gofordsemi.com TEL：0755-29961263 DIMENSIONS INCHES MM MIN MAX MIN MAX 0.012 0.020 0.30 0.50 0.051 0.070 1.30 1.80 0.087 0.126 2.20 3.20 0.037 0.95 0.074 1.90 0.106 0.122 2.70 3.10 0.002 0.006 0.05 0.15 0.030 0.051 0.75 1.30 0.012 0.024 0.30 0.60 0.003 0.008 0.08 0.22 L NOTE FAX:0755-29961466 TYP. TYP. GOFORD G8N03 Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA Zero Gate Voltage Drain Current IDSS VDS =30V, VGS =0V 1 µA Gate-Source Leakage Current IGSS VDS =0V, VGS =±20V ±100 nA Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250µA 1.4 3 V VGS=10V, ID=8A 14 RDS(on) 9 Drain-Source On-Resistance VGS=4.5V, ID=8A 11 16 VDS=5V, ID=8A 30 30 V On Characteristics(Note 3) Forward Tranconductance gFS 1 mΩ S Dynamic Characteristics(Note 4) 900 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 50 Turn-On Delay Time td(on) 15 Turn-On Rise Time tr Turn-Off Delay Time td(off) VDS=15V,VGS=0V,f =1MHz pF 300 Switching Characteristics(Note 4) VGS=10V,VDD=25V,ID=1A, RGEN=6Ω 10 Turn-Off Fall Time tf 12 Total Gate Charge Qg 13 Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=15V, ID=8A,VGS=5V ns 45 3.2 nC 2.0 Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Current Diode Forward Voltage(Note 3) IS VSD VGS=0V, IS=8A 8 A 1.2 V Note: 3. Pulse Test : Pulse Width≤300μs, Duty Cycle ≤ 2%. 4. uaranteed by Design, Not Subject to Production Testing. www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 GOFORD G8N03 Curve Characteristics Fig. 1 - RDS(ON)—ID Fig. 2 - Transfer Characteristics 25 30 Pulsed 25 20 Drain Current (A) Drain-Source On-Resistance (mΩ) TA=25°C 20 VGS=4.5V 15 10 0 10 TC=125°C 5 VGS=10V 5 15 TC=25°C TC=-55°C 0 10 20 30 40 0 50 0 1 Drain Current (A) 2 3 4 5 Gate To Source Voltage (V) Fig. 4 - IS—VSD Fig. 3 - Gate Charge Characteristics 100 10 ID=8A 8 Source Current (A) Gate-Source Voltage (V) VDS=15V 6 4 TJ=150°C 10 TJ=25°C 2 0 0 5 10 15 20 25 0.2 0.4 0.6 0.8 1.0 Source To Drain Voltage (V) Gate Charge(nC) www.gofordsemi.com 1 0.0 TEL：0755-29961263 FAX:0755-29961466 1.2