G1NP02ELL

GOFORD G1NP02ELL N and P Channel Enhancement Mode Power MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ⚫ ⚫ ⚫ ⚫ ⚫ ⚫ NMOS VDS ID (at VGS = 10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) RDS(ON) (at VGS = 1.8V) ⚫ ⚫ ⚫ ⚫ ⚫ ⚫ ⚫ ⚫ ⚫ PMOS VDS ID (at VGS = -10V) RDS(ON) (at VGS = -4.5V) RDS(ON) (at VGS = -2.5V) RDS(ON) (at VGS = -1.8V) 100% Avalanche Tested RoHS Compliant ESD (HBM)>2.0KV Schematic diagram 20V 1.36A < 375mΩ < 450mΩ < 800mΩ Marking and pin assignment -20V -1.15A < 520mΩ < 700mΩ < 1000mΩ SOT-23-6L Application ⚫ Power switch ⚫ DC/DC converters Device Package Marking Packaging G1NP02ELL SOT-23-6 G1NP02 3000pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol NMOS PMOS Unit VDS 20 -20 V ID 1.36 -1.15 A IDM 5.4 -3.4 A Gate-Source Voltage VGS ±10 ±10 V Power Dissipation PD 1.12 1.12 W TJ, Tstg -55 To 150 -55 To 150 ºC Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Operating Junction and Storage Temperature Range Thermal Resistance Parameter Symbol Value Unit RthJA 111 ºC/W Thermal Resistance, Junction-to-Ambient www.gofordsemi.com TEL：0755-29961262 FAX:0755 -29961466 V2.0-Version GOFORD G1NP02ELL NMOS Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 20 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±10V -- -- ±10 uA VGS(th) VDS = VGS, ID = 250µA 0.35 0.55 1 V VGS = 4.5V, ID = 0.65A -- 159 370 VGS = 2.5V, ID = 0.55A -- 209 450 VGS = 1.8V, ID = 0.45A -- 290 800 VDS=10V,ID=0.5A -- 1.6 -- -- 60 -- -- 15 -- -- 5 -- -- 750 -- -- 75 -- Gate-Source Threshold Voltage Drain-Source On-Resistance Forward Transconductance RDS(on) gFS mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg VGS = 0V, VDS = 10V, f = 1.0MHz VDD = 10V, ID = 250mA, VGS = 4.5V Gate-Source Charge Qgs Gate-Drain Charge Qgd -- 225 -- Turn-on Delay Time td(on) -- 6.7 -- Turn-on Rise Time tr -- 4.8 -- Turn-off Delay Time td(off) -- 17.3 -- -- 7.4 -- Turn-off Fall Time VDD = 10V, ID = 0.5A, RG = 10Ω tf pF pC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current Body Diode Voltage IS TC = 25ºC -- -- 1.36 A VSD TJ = 25ºC, ISD = 0.5A, VGS = 0V -- -- 1.2 V Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961262 FAX:0755 -29961466 V2.0-Version GOFORD G1NP02ELL NMOS Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 2. Transfer Characteristics ID, Drain Current (A) ID, Drain Current (mA) Figure 1. Output Characteristics VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) RDS(on), On-Resistance (mΩ) VGS=1.8V 300 Figure 4. Gate Charge Vgs Gate-Source Voltage（V） Figure 3.Drain-Source On-Resistance 350 250 VGS=2.5V 200 150 VGS=4.5V 100 5 VDS=10V ID=250mA 4 3 2 1 0 0.3 0.5 0.7 0.9 0 ID-Drain Current（A） 0.2 0.4 0.6 0.8 Qg Gate Charge（nC） Figure 6. Source-Drain Diode Forward Capacitance(pF) Is, Reverse Drain Current (A) Figure 5. Capacitance -Vds Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961262 VSD, Source-to-Drain Voltage (V) FAX:0755 -29961466 V2.0-Version GOFORD G1NP02ELL NMOS Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area Figure 7. Drain-Source On-Resistance VGS=10V ID=600mA 1.4 ID, Drain Current(A) RDS(on), (Normalized) 1.6 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961262 FAX:0755 -29961466 V2.0-Version GOFORD G1NP02ELL PMOS Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -20 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±10V -- -- ±10 uA VGS(th) VDS = VGS, ID = -250µA -0.35 -0.55 -0.8 V VGS = -4.5V, ID = -0.5A -- 375 520 VGS = -2.5V, ID = -0.5A -- 478 700 VGS = -1.8V, ID = -0.5A -- 621 1000 VDS=-5V,ID=-0.6A -- 1.7 -- -- 68.4 -- -- 17 -- -- 5.7 -- -- 855 -- -- 85.5 -- Gate-Source Threshold Voltage Drain-Source On-Resistance Forward Transconductance RDS(on) gFS mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg VGS = 0V, VDS = -10V, f = 1.0MHz VDD = -10V, ID = -250mA, VGS = -4.5V Gate-Source Charge Qgs Gate-Drain Charge Qgd -- 256.5 -- Turn-on Delay Time td(on) -- 6.5 -- Turn-on Rise Time tr -- 6.5 -- Turn-off Delay Time td(off) -- 18.2 -- -- 5.5 -- Turn-off Fall Time VDD = -10V, ID = -0.6A, RG = 3Ω tf pF pC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current Body Diode Voltage IS TC = 25ºC -- -- -1.15 A VSD TJ = 25ºC, ISD = -0.5A, VGS = 0V -- -- -1 V Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961262 FAX:0755 -29961466 V2.0-Version GOFORD G1NP02ELL PMOS Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics -ID, Drain Current (A) -ID, Drain Current (A) 4 25ºC 3 2 125ºC 1 0 0 -VDS, Drain-to-Source Voltage (V) RDS(on), On-Resistance (mΩ) VGS=-1.8V 600 VGS=-2.5V VGS=-4.5V 300 2 2.5 3 3.5 4 4.5 5 VDS=-10V ID=-250mA 4 3 2 1 0 0 0.2 0.4 0.6 0.8 0 1 -ID-Drain Current（A） 0.4 0.6 0.8 1 Figure 6. Source-Drain Diode Forward -Is, Reverse Drain Current (A) 120 100 Ciss 80 60 Coss 40 0.2 Qg Gate Charge（nC） Figure 5. Capacitance Capacitance(pF) 1.5 Figure 4. Gate Charge -Vgs Gate-Source Voltage（V） Figure 3.Rdson-Drain Current 400 1 -VGS, Gate-to-Source Voltage (V) 700 500 0.5 Crss 20 0 0 4 8 12 16 20 -Vds Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961262 -VSD, Source-to-Drain Voltage (V) FAX:0755 -29961466 V2.0-Version GOFORD G1NP02ELL PMOS Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area -ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) -VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961262 FAX:0755 -29961466 V2.0-Version GOFORD G1NP02ELL SOT-23-6L Package Information Dimensions in Millimeters Symbol MIN. NOM. MAX. A1 0.00 - 0.10 A2 1.00 1.10 1.20 b 0.30 0.40 0.50 c 0.10 0.15 0.20 D 2.80 2.90 3.00 E 1.50 1.60 1.70 E1 2.60 2.80 3.00 e 0.2GAUGE PLANE e1 - 1.90 - L 0.30 0.45 0.60 Θ 0° - 8° All Dimensions in mm www.gofordsemi.com TEL：0755-29961262 FAX:0755 -29961466 V2.0-Version